Untitled
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING
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ER10M
MIL-PRF-39010/08/09/10
MIL-PRF-39010/08
ER10M100
ER10M110JP
ER10M120
ER10M130JP
ER10M150
ER10M160JP
ER10M180
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Untitled
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING
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ER10M
MIL-PRF-39010/08/09/10
MIL-PRF-39010/08
08BR10KM
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10A820
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING
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ER10M
MIL-PRF-39010/08/09/10
MIL-PRF-39010/08
08BR10KR
10A820
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m39010
Abstract: 08BR10KM 10A36 10A331 10a471 10a470 10A181 10A27 10a131 10A221
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING
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ER10M
MIL-PRF-39010/08/09/10
MIL-PRF-39010/08
ER10M100
ER10M110JM
ER10M120
ER10M130JM
ER10M150
ER10M160JM
ER10M180
m39010
08BR10KM
10A36
10A331
10a471
10a470
10A181
10A27
10a131
10A221
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diode 10A10
Abstract: No abstract text available
Text: Formosa MS Axial Leaded General Purpose Rectifiers 10A05 THRU 10A10 List List. 1 Package outline. 2
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10A05
10A10
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
diode 10A10
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10A10 diode
Abstract: 10A4 diode P600 diode diode 10A6 diode 10A10 10A4 diode p diode p600 P600 10A10 P600 dc
Text: 10A05 – 10A10 WTE POWER SEMICONDUCTORS Pb 10A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: P-600, Molded Plastic
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10A05
10A10
P-600,
MIL-STD-202,
P-600
10A10 diode
10A4 diode
P600 diode
diode 10A6
diode 10A10
10A4 diode p
diode p600
P600
10A10
P600 dc
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p600
Abstract: diode p600
Text: 10A05 – 10A10 WTE POWER SEMICONDUCTORS Pb 10A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: P-600, Molded Plastic
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10A05
10A10
P-600,
MIL-STD-202,
P-600
p600
diode p600
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10a10 diode
Abstract: No abstract text available
Text: 10A05 – 10A10 10A HIGH CURRENT STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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10A05
10A10
P-600,
MIL-STD-202,
P-600
10a10 diode
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m39010
Abstract: No abstract text available
Text: QPL RF INDUCTORS - THRU HOLE ER10M TRADITIONAL Estabilished Reliability Wirewound, Molded, Level R Qualified, MIL-PRF-39010 Pb M39010/08 Phenolic Core /09 Powdered Iron Core /10 Ferrite Core PART NUMBER MIL PART L µH Q TEST SRF NUMBER MIN FREQ MHz MHZ MIN
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ER10M
MIL-PRF-39010
M39010/08
MIL-PRF-39010/08
ER10M100*
ER10M110J^
ER10M120*
ER10M130J^
ER10M150*
ER10M160J^
m39010
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10A8 SOT23-6
Abstract: 10A8 MOSFET sot23-6 TOP marking sot23-6 power MOSFET sot23-6 ZXMN10A08E6TC MARKING A SOT23-6 DSS SOT23 sot23-6 ZXMN10A08E6
Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them
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ZXMN10A08E6
OT23-6
OT23-6
ZXMN10A08E6TA
ZXMN10A08E6T
ZXMN10A08E6TC
10A8 SOT23-6
10A8
MOSFET sot23-6
TOP marking sot23-6
power MOSFET sot23-6
ZXMN10A08E6TC
MARKING A SOT23-6
DSS SOT23
sot23-6
ZXMN10A08E6
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10a201
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M TRADITIONAL Pb Molded Unshielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 Level R Qualified PART MIL PART L µH Q TEST SRF NUMBER NUMBER MIN FREQ. MHz MHz MIN. ER10M100*^ ER10M110J^ ER10M120*^
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ER10M
MIL-PRF-39010/08/09/10
ER10M100*
ER10M110J^
ER10M120*
ER10M130J^
ER10M150*
ER10M160J^
ER10M180*
ER10M200J^
10a201
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Untitled
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 Level R Qualified PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE
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ER10M
MIL-PRF-39010/08/09/10
MIL-PRF-39010/08
08BR10KR
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10A103K
Abstract: TNR10A123K 10A103 10A-103K 103k varistor TNL10A-123KB00AAA0 TNR10A103K 10A-123K TNL10A-103KB00AAA0 mark K13
Text: METAL OXIDE VARISTORS TNRTM RoHS Compliant High Varistor Voltage Axial Lead Type Operating Temperature Range -40 to +85C Storage Temperature Range -50 to +105C ?STANDARD RATINGS Part Number Previous Part Number (Just for your reference) 4A Type TNL04A-122KB00AAA0
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TNL04A-122KB00AAA0
TNL04A-152KB00AAA0
TNL04A-182KB00AAA0
TNL04A-202KB00AAA0
TNL10A-472KB00AAA0
TNL10A-562KB00AAA0
TNL10A-682KB00AAA0
TNL10A-822KB00AAA0
TNL10A-103KB00AAA0
TNL10A-123KB00AAA0
10A103K
TNR10A123K
10A103
10A-103K
103k varistor
TNL10A-123KB00AAA0
TNR10A103K
10A-123K
TNL10A-103KB00AAA0
mark K13
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ZXMN10A08E6
Abstract: 10A8 ZXMN10A08E6TA ZXMN10A08E6TC DS31909 marking 10A8 10A8 SOT23-6
Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) 100V TA = 25°C 0.25Ω • Low on-resistance •
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ZXMN10A08E6
AEC-Q101
OT23-6
DS31909
ZXMN10A08E6
10A8
ZXMN10A08E6TA
ZXMN10A08E6TC
marking 10A8
10A8 SOT23-6
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits N EW PRODU CT Product Summary V BR DSS 100V Max RDS(on) • • • • • Max ID TA = 25°C (Note 5) 250mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 6V
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ZXMN10A08E6
AEC-Q101
DS31909
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10A8 SOT23-6
Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=100V; RDS(ON)=0.4⍀ D=1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power
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ZXMN10A08E6
OT23-6
OT23-6
ZXMN10A08E6TA
ZXMN10A08E6TC
10A8 SOT23-6
10A8
ZXMN10A08E6
ZXMN10A08E6TA
ZXMN10A08E6TC
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10A8
Abstract: ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN10A08E6
OT23-6
OT23-6
ZXMN10A08E6TA
ZXMN10A08E6TC00
10A8
ZXMN10A08E6
ZXMN10A08E6TA
ZXMN10A08E6TC
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ZXMN10A08E6
Abstract: 10A8 SOT23-6 10A8 ZXMN10A08E6TA ZXMN10A08E6TC
Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.4 ID= 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN10A08E6
OT23-6
OT23-6
ZXMN10A08E6TA
ZXMN10A08E6TC
ZXMN10A08E6
10A8 SOT23-6
10A8
ZXMN10A08E6TA
ZXMN10A08E6TC
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fs405
Abstract: No abstract text available
Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ; ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them
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ZXMN10A08E6
OT23-6
OT23-6
ZXMN10A08E6TA
ZXMN10A08E6TC
TX75248,
fs405
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10A8 SOT23-6
Abstract: ZXMN10A08E6
Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.25 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN10A08E6
OT23-6
OT23-6
ZXMN10A08E6TA
ZXMN10A08E6TC
10A8 SOT23-6
ZXMN10A08E6
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10A8 SOT23-6
Abstract: 10A8 ZXMN10A08E6 ZXMN10A08E6TA ZXMN10A08E6TC
Text: ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 100V; RDS(ON) = 0.4 ID = 1.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN10A08E6
OT23-6
OT23-6
ZXMN10A08E6TA
ZXMN10A08E6TC
10A8 SOT23-6
10A8
ZXMN10A08E6
ZXMN10A08E6TA
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20e221
Abstract: WP1J 10V471K varistor 472 ns b 10v 471k tnr 47p3 10n 471k TRANSISTOR F10 10N metal oxide varistor 471k 20k tnr g 471k
Text: METAL OXIDE VARISTORS TNR METAL OXIDE VARISTORS TNR CAT. No. E1006S INDEX PRODUCT SEARCH SERIES TABLE PRECAUTIONS AND GUIDELINES GROUP CHART PART NUMBERING SYSTEM TECHNICAL TERMS ON VARISTORS PRODUCTION GUIDE SAFETY STANDARDS TAPING SPECIFICATION PACKAGING
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E1006S
AC110V
TND14V-271K
AC220V
TND14V-471K
20e221
WP1J
10V471K
varistor 472 ns b
10v 471k tnr
47p3
10n 471k
TRANSISTOR F10 10N
metal oxide varistor 471k 20k
tnr g 471k
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10A80
Abstract: No abstract text available
Text: 10A80VT»150V FuSy Molded similar to TO -220AC 0*^ FSHS10A08 Nihon Inter Electronics Corporation Specification Construction fflìÉ Application is a -yb yr Schottky Barrier Diode k High Frequency Rectification J f c f c Ï E MAXIMUM RATINGS Ta=25'C: Unless otherwise specified
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OCR Scan
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PDF
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10A80VTiw150V
T0-220AC
FSHS10A08
UL94V-0fi.
UL94V-0
10A80
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PA66GF25
Abstract: PA6.6 - GF25 PA66-GF pa66-gf25
Text: T H I S D R A W I N G IS U N P U B L IS H E D R E LE A S E F O R P U B LIK A T IO N V E R T R A U L I C H E U N V E R O E F F E N T L I C H E Z E IC H N U N G FREI F U E R V E R O E F F E N T LIC H U N G c o p y r ig h t 2000 BY A M P IN C O R P O R A T ED
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OCR Scan
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PDF
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EGGMN04410
ECR-06-022352
PA66GF25
PA6.6 - GF25
PA66-GF
pa66-gf25
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