Untitled
Abstract: No abstract text available
Text: S23LC03 THRU S23LC24 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0292, Rev. - MARKING DIAGRAM Where 05L is S23LC05 05L = Part Name Cautions：Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 86 25-87123907 •
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S23LC03
S23LC24
N0292,
S23LC05
S23LC03
S23LC36
OT-23
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Untitled
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD102-U4-05L Ultra-Low Capacitance ESD Protection Array for Flow-Through PCB Layout ESD102-U4-05L Data Sheet Revision 1.0, 2013-02-25 Final Power Management & Multimarket Edition 2013-02-25 Published by Infineon Technologies AG
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ESD102-U4-05L
AN210:
AN240:
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UDT26A05L01
Abstract: RH56 UDT26A05L
Text: UDT26C A 05L01 Ultra Low Capacitance TVS Array For Uni/Bidirectional Protection UDT26A05L01 series are ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifi cally designed to protect sensitive components which are connected to high-speed data and
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UDT26C
05L01
UDT26A05L01
UDT26A05L01
UDT26C05L01
8/20s
RH56
UDT26A05L
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ultra low capacitance tvs
Abstract: UBT36C05L01
Text: UBT36A C 05L01 SERIES Ultra Low Capacitance TVS Array For Uni/Bidirectional Protection UBT36A05L01 series are ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifi cally designed to protect sensitive components which are connected to high-speed data and
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UBT36A
05L01
UBT36A05L01
UBT36A05L01
UBT36C05L01
8/20s
ultra low capacitance tvs
UBT36C05L01
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SUM75N04-05L
Abstract: SUM75N04 S5014
Text: SUM75N04-05L New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.005 @ VGS = 10 V 75a 0.006 @ VGS = 4.5 V 75a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature
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SUM75N04-05L
O-263
SUM75N04-05L
S-50141--Rev.
24-Jan-05
SUM75N04
S5014
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MARKING 05L
Abstract: SUM75N04 SUM75N04-05L
Text: SUM75N04-05L New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.005 @ VGS = 10 V 75a 0.006 @ VGS = 4.5 V 75a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature
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SUM75N04-05L
O-263
SUM75N04-05L
18-Jul-08
MARKING 05L
SUM75N04
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Untitled
Abstract: No abstract text available
Text: SUM75N04-05L New Product Vishay Siliconix N-Channel 40-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.005 @ VGS = 10 V 75a 0.006 @ VGS = 4.5 V 75a D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature
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SUM75N04-05L
O-263
SUM75N04-05L
08-Apr-05
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SUD50N04-05L
Abstract: SUD50N04-05L-E3
Text: New Product SUD50N04-05L Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0054 at VGS = 10 V 115 0.0069 at VGS = 4.5 V 102 V(BR)DSS (V) 40 • TrenchFET Power MOSFETS • 175 °C Junction Temperature RoHS
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SUD50N04-05L
O-252
SUD50N04-05L-E3
18-Jul-08
SUD50N04-05L
SUD50N04-05L-E3
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Untitled
Abstract: No abstract text available
Text: New Product SUD50N04-05L Vishay Siliconix N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)c 0.0054 at VGS = 10 V 115 0.0069 at VGS = 4.5 V 102 V(BR)DSS (V) 40 • TrenchFET Power MOSFETS • 175 °C Junction Temperature RoHS
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SUD50N04-05L
O-252
SUD50N04-05L-E3
08-Apr-05
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SUM110N06-05L
Abstract: SUM110N06-05L-E3
Text: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package
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SUM110N06-05L
O-263
SUM110N06-05L-E3
08-Apr-05
SUM110N06-05L
SUM110N06-05L-E3
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SUM110N06-05L
Abstract: SUM110N06-05L-E3 C7065
Text: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package
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SUM110N06-05L
O-263
SUM110N06-05L-E3
18-Jul-08
SUM110N06-05L
SUM110N06-05L-E3
C7065
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SUM60N04-05LT
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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SUM60N04-05LT
SUM60N04-05LT
SUM60N04-05LT-E3
08-Apr-05
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SUM60N04-05LT
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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SUM60N04-05LT
SUM60N04-05LT-E3
18-Jul-08
SUM60N04-05LT
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SUM110N06-05L
Abstract: SUM110N06-05L-E3 MARKING 05L
Text: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package
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SUM110N06-05L
O-263
SUM110N06-05L-E3
11-Mar-11
SUM110N06-05L
SUM110N06-05L-E3
MARKING 05L
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D2GD
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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SUM60N04-05LT
SUM60N04-05LT
SUM60N04-05LT-E3
11-Mar-11
D2GD
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Untitled
Abstract: No abstract text available
Text: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package
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SUM110N06-05L
O-263
SUM110N06-05L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package
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SUM110N06-05L
O-263
SUM110N06-05L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM110N06-05L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) 0.0052 at VGS = 10 V 0.0072 at VGS = 4.5 V ID (A) 110 a • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package
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SUM110N06-05L
O-263
SUM110N06-05L
SUM110N06-05L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 60a 0.0065 at VGS = 4.5 V 20a • TrenchFET Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature
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SUM60N04-05LT
SUM60N04-05LT
SUM60N04-05LT-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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DIODE T25 4
Abstract: marking WS2 sot W0301016 WS05LUC WS12LUC MARKING 05L DIODE T25 WS2.8LUC WS12L WS05L
Text: Document: W0301016, Rev: B WS2.8LUC through WS12LUC Transient Voltage Suppressor Features 200 watts peak pulse power tp = 8/20 s Small package for use in portable electronics Two devices will protect one line Ultra Low capacitance for high-speed data lines
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W0301016,
WS12LUC
8/20s)
OT23-3L
EN61000-4)
5/50ns)
OT-23
WS05LUC
DIODE T25 4
marking WS2 sot
W0301016
WS05LUC
WS12LUC
MARKING 05L
DIODE T25
WS2.8LUC
WS12L
WS05L
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Untitled
Abstract: No abstract text available
Text: 05066 PSOT03LC thru PSOT36LC Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ Ethernet - 10/100 Base T ✔ Cellular Phones ✔ FireWire ✔ Audio/Video Inputs ✔ Portable Electronics IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV
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PSOT03LC
PSOT36LC
EN61000-4)
5/50ns
OT-23
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marking code 36L
Abstract: transistor marking 36L PSOT03LC PSOT05LC PSOT08LC PSOT12LC PSOT15LC PSOT24LC PSOT36LC
Text: 05066 PSOT03LC thru PSOT36LC Only One Name Means ProTek’Tion ULTRA LOW CAPACITANCE TVS ARRAY APPLICATIONS ✔ Ethernet - 10/100 Base T ✔ Cellular Phones ✔ FireWire ✔ Audio/Video Inputs ✔ Portable Electronics IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV
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PSOT03LC
PSOT36LC
EN61000-4)
5/50ns
OT-23
marking code 36L
transistor marking 36L
PSOT03LC
PSOT05LC
PSOT08LC
PSOT12LC
PSOT15LC
PSOT24LC
PSOT36LC
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F15N06L
Abstract: No abstract text available
Text: ti3G2271 0D5M773 Th? HAS R FM 15N 05L/06L R FP15N 05L/06L HARRIS N-Channel Logic Level Power Field-Effect Transistors L2 FET A ug ust 19 91 Package Features TO-204AA BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S (O N ) = 0 .1 4 « DRAIN /( F L A N G E )
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ti3G2271
0D5M773
05L/06L
FP15N
O-204AA
T0-220A
9JCS-376S4
36I48
F15N06L
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MA1T
Abstract: ma23
Text: 1S 1 CO 1*0 1.CONTACT LEN GTH CONTACT POS.No. L 1,15 OTHERS 2.9 NDTE 2. CONTACT PLATING CONTACT AREA: HOLD 0.1 MICRO METER OVER P d / N M 1, MICRO METER MIN. TERMINAL7 AREA:TIN/LEAD ALL OVER:Ni 1 .2 7 'MICRO METER MIN. NOTE 3.DATE CODE 998 Y E A R 9 8 :1 9 9 8
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RMC--EA15MY--0M15--MAT
RMC-EA15MY-0M15-MA1T
RMC-EA15MY-0M15-MA2T
RMC-EA15MY-0M15-MA3T
15F0--05L(
15F0--0SL(
-MA23
-MA13
MA1T
ma23
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