MARKING 01B Search Results

chip resistor marking

Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Contextual Info: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm

MARKING OF CHIP RESISTOR

Abstract: Resistor 511 Ohm color code SMD resistors 121 smd code marking rac 10k resistor network SIP 10K SIP Resistor E192 paste resistor thick film SMD resistors codes smd marking 619
Contextual Info: Chip Resistors Stackpole Electronics, Inc. Part Marking Instructions Resistive Product Solutions Part Marking Instructions – Chip Resistors 5% Marking The nominal resistance is marked on the surface of the overcoating with the use of 3 digit markings. 0201 and 0402 are not marked.

MARKING 01B

Contextual Info: Part Marking Instructions — Chip Resistors 5% Marking The nominal resistance is marked on the surface of the overcoating with the use of 3 digit markings. 0201 and 0402 are not marked 1% Marking The nominal resistance is marked on the surface of the overcoating

Contextual Info: Part Marking Instructions — Chip Resistors 5% Marking The nominal resistance is marked on the surface of the overcoating with the use of 3 digit markings. 0201 and 0402 are not marked 1% Marking The nominal resistance is marked on the surface of the overcoating

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

MARKING 01C

Abstract: 01ACB GP 939 GP marking gp 538 GP 729 GP 458 marking 07A
Contextual Info: Terminal Block Accessories Double Row - Top Mounted Covers/Marking Strips Specifications: • Printing Character Size is 1/8 Inch White Vinyl Material, 0.03” thick • Unless Otherwise Specified, the Marking goes down the Two Nylon Spring Clips for Mounting Provided

CKS06

Contextual Info: MIL-PRF-123 MARKING Radials Axials CKS05, -/01 Part Number M123A 01BPC 4R7CC CKS11, -/04 JAN 0710AA 12345 Date and 2 Digit Lot Code FSCM Lot Code and “J” 123A 270F 0710 BUJAP Spec. Number and Modification Code Cap. Value and Tolerance Date Code Manufacturer’s Trademark and TC Code

Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BAT 14-099 Silicon Dual Schottky Diode • DBS mixer application to 12 GHz • Low noise figure • Medium barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel BAT 14-099

lpddr2 256mb

Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ

656 Series

Abstract: MARKING 01C
Contextual Info: Terminal Block Accessories Double Row - Sub Mounted Marking Strips Specifications: • • • Black XP Phenolic Material, 0.03” thick Printed on Top or Bottom Position with Letters or Numbers for Circuit Identification Printing Character Size is 1/8 Inch

NT6DM16M16AD-T1

Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I
Contextual Info: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking  VDD /VDDQ

Contextual Info: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23

Contextual Info: SIEMENS PNP Silicon Transistors • • • • SMBT 5086 SMBT 5087 For AF input stages and driver applications High current gain Low coliector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Type Marking Ordering Code tape and reel PinCContigui ation

CPU21

Abstract: rtx166 AP1628 WDTCON C161O C166 FIX166 P-MQFP-80-1 SAB-C161O-LM SAB-C161O-LM3V
Contextual Info: Microcontroller Components Errata Sheet March 30, 2001 / Release 1.0 Device: Stepping Code / Marking: Package: SAB-C161O-LM SAF-C161O-LM SAB-C161O-LM3V SAF-C161O-LM3V ES-HA, HA P-MQFP-80-1 This Errata Sheet describes the deviations from the current user documentation. The

NT6DM32M16AD-T1

Abstract: NT6DM32M16AD NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout
Contextual Info: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver

LPDDR 8Gb

Abstract: lpddr2 256mb NT6DM32M16AD-T1 NT6DM32M16AD nanya lpddr2 spec
Contextual Info: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options  Double-data rate architecture; two data transfer per clock cycle  Bidirectional, data strobe DQS is transmitted/received with Marking  VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver

Contextual Info: SIEMENS PNP Silicon Darlington Transistors • • • • BCP 28 BCP 48 For general AF applications High collector current High current gain Complementary types: BCP 29/49 NPN Type Marking Ordering Code (tape and reel) BCP 28 BCP 48 BCP 28 BCP 48 Q62702-C2134

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

SAK-C167S-4RM

Abstract: SAB-C167S-4RM C167 C167CR-LM C167S C167S-4RM
Contextual Info: Microcomputer Components Technical Support Group Munich HL DC AT Errata Sheet November 28, 1997 / Release 1.0 Device : Stepping Code / Marking : SAB-C167S-4RM, SAK-C167S-4RM AA The C167S-4RM is a version of the C167 with 32 Kbyte on-chip ROM and a PLL oscillator circuit.

MT42L32M32D2

Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks

Contextual Info: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm

SAB-C161PI-LM

Abstract: C161PI C167 SAB-C161PI-LF SAF-C161PI-LF SAF-C161PI-LM 1301H ap2420
Contextual Info: Microcontroller Components Errata Sheet February 17, 2000 / Release 1.3 Device: SAB-C161PI-LM, SAF-C161PI-LM SAB-C161PI-LF, SAF-C161PI-LF Stepping Code / Marking: Package: ES-AA P-MQFP-100-2, P-TQFP-100-1 This Errata Sheet describes the deviations from the current user documentation. The

Contextual Info: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package