diode ja8
Abstract: NE y Ja8 MARK 8E diode esja ne ja8 HIGH VOLTAGE DIODE 6kv HH1T 30S3 ESJA88 ESJA88-06
Text: ESJA88 6kv, 8 k V £ ± 'J *-K : Outline Drawings HIGH VOLTAGE SILICON DIODE D 7 hNo. ESJA881*, ^ tiv~ V-7—9 lot No. \ E * « * tt« » * - ^ K s * E 5 fc * ^ * - K T T o ESJA88 is high reliability resin molded type high voltage /cathode Mark \ / ^ 2.5
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ESJA88
ESJA88-06
ESJA88-08
ESJA889
l95t/R89
diode ja8
NE y Ja8
MARK 8E diode
esja
ne ja8
HIGH VOLTAGE DIODE 6kv
HH1T
30S3
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode OUTLINE D2FK60 Unit* mm Weight O.lötf Typ Package : 2F a y -K v -» / Cattaxlr mark 600V 1.5A Feature !> — M - •HJBEE • Small SMD • High Voltage • trr= 7 5 n s • trr-7 5 n s • <£V f=1.3V • Low Vf=1.3V
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D2FK60
J532-1)
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Untitled
Abstract: No abstract text available
Text: BAT42, BAT43 Schottky Diodes _ FEATURES_ DO-35 ♦ << max. 0.0 7 9 2.0 C athode Mark For general purpose applications ♦ These diodes feature very low turn- 'S !:i on voltage and fast switching. These devices are protected by a PN junction
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BAT42,
BAT43
DO-35
OD-123
BAT42W
BAT43W
DO-35
BAT42
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RSX501L-20
Abstract: No abstract text available
Text: RSX501L-20 Diodes Shottky barrier diode RSX501L-20 zExternal dimensions Unit : mm zApplication General rectification. CATHODE MARK 5 7 3 4 2.6±0.2 0.1±0.02 0.1 5.0±0.3 zFeatures 1) Small power mold type. (PMDS) 2) High reliability. 3) Low VF. 4.5±0.2
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RSX501L-20
RSX501L-20
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KDV175
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHF～UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K A ・Low Capacitance : CT=0.25[pF] Typ. 1 E FEATURES G B H F ・Low Series resistance : rS=7[Ω] (Typ.).
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KDV175
100MHz
KDV175
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KDV175
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV175 TECHNICAL DATA SILICON EPITAXIAL PIN TYPE DIODE VHFᴕUHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. CATHODE MARK L K H F ᴌLow Series resistance : rS=7[ή] Typ. . A ᴌLow Capacitance : CT=0.25[pF] (Typ.) 1 E FEATURES G
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KDV175
100MHz
KDV175
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RB083L-20
Abstract: No abstract text available
Text: RB083L-20 Diodes Schottky barrier diode RB083L-20 !External dimensions Units : mm !Applications High frequency rectification For switching power supply 5 4.5±0.2 CATHODE MARK 7 0.1 +0.02 −0.1 5.0±0.3 !Features 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR.
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RB083L-20
OD-106
RB083L-20
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Untitled
Abstract: No abstract text available
Text: K /D io d e s RB751H RB751H > y * '- A VT $ < * ~ 3 7 h K Silicon Epitaxial Schottky Barrier Diodes • 1 1 ' f 7 PT & 5 2) rrS @ /D im e n s io n s Unit : mm) (D SM )o "S o CATHODE MARK • Features O.I5± 0.l SB -1) Small surface mount type (DSM). 2) High reliability.
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RB751H
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TSOP8
Abstract: RB050PS-30
Text: RB050PS-30 Diodes Schottky barrier diode RB050PS-30 zExternal dimensions Unit : mm (6) zLand size figure 0.5±0.05 (7) (8) (5) 1pin mark φ1.4 1.5 0.15 6.6 4.56 ① 0.5 zFeatures 1) High power mold type. (TSOP8) 2) Low IR 3) High reliability 4.7 0～0.1
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RB050PS-30
TSOP8
RB050PS-30
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13B1
Abstract: E64380 PC8D52 PC8Q52 SHARP PC8D52 pc8q52 sharp
Text: PC8D52/PC8Q52 PC8D52/PC8Q52 High Collector-emitter Voltage Type Photocouplers • Features ■ Outline Dimensions Anode mark PC8D52 2.54±0.25 8 7 6 1 2 1 2 3 4 3.0±0.5 0.26±0.1 3.3 θ Anode Cathode 5 7 6 8 θ=0 to 13˚ θ Emitter Collector PC8Q52 Internal connectiondiagram
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PC8D52/PC8Q52
PC8D52
PC8Q52
13B1
E64380
PC8D52
PC8Q52
SHARP PC8D52
pc8q52 sharp
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT BAT86 Schottky Diodes FEATURES D O -35 ♦ _ max. 0 .0 7 9 2.0 -C athode Mark For general purpose applications. + This diode features low turn-on volt- \ age. The devices are protected by a PN junction guard ring against excessive volt
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BAT86
BAS86.
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ERD32
Abstract: A124 marking code
Text: ERD32 3A FAST RECOVERY DIODE * Features IÄ7F : Marking Super high speed switching • 1&VF Low VF A5 - 3 — K Color code : Orange Large current Abridged type • sn High reliability name ŒŒ? 5 7, Voltage class O ;r Mid Lot No. 0-, HBBiMEt ^ Lot No. division mark
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ERD32
A124 marking code
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Untitled
Abstract: No abstract text available
Text: SD101A THRU SD101C Schottky Diodes FEATURES DO-35 << max. 0.0 7 9 2.0 Cathode Mark ♦ For general purpose applications. ♦ The LL101 series is a metal-on-sili- % con Schottky barrier device which is protected by a PN junction guard ring. |j| The low forward voltage drop and fast
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SD101A
SD101C
DO-35
LL101
OD-123
SD101
SD101CW
LL101A
LL101C.
DO-35
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smd diode schottky code marking 2F
Abstract: smd diode schottky code marking nu T13c marking smd NU smd code marking 4A diode smd k9 MARKING JM smd diode marking 325 smd marking code nu
Text: Schottky Barrier Diode Single Diode m tm m o u tlin e Package : 2F D3FP3 Unit-mm Weight 0.16g Typ ij y -K -7 -9 30V 3A / Cathode mark Feature • Small SMD • Ultra-Low Vf=0.4V • K y T 'J H f f iS K it • Reverse connect protection for DC power source
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J532-1)
smd diode schottky code marking 2F
smd diode schottky code marking nu
T13c
marking smd NU
smd code marking 4A
diode smd k9
MARKING JM
smd diode marking 325
smd marking code nu
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT BAT86 Schottky Diodes FEATURES DO-35 ♦ _ max. 0 .0 7 9 2.0 -C a th o d e Mark For general purpose applications. + This diode features low turn-on volt age. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
DO-35
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Untitled
Abstract: No abstract text available
Text: VSC5529 Datasheet FEATURES ● ● ● ● ● ● ● ● Ultra-small form factor: 16 x 6 x 2.5 mm BGA Optimized for metro and long haul LiNbO3 NRZ applications Exceptional eye mark margin Excellent input sensitivity: 250 mV Wide output range: up to 7 V Low jitter
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VSC5529
VSC5529
VMDS-10074
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M1F60
Abstract: No abstract text available
Text: Rectifier Diode Surface Mounting Device Single Diode •*W fN -äsH OUTLINE DIMENSIONS Package : M1F Unit : mm M 1 F 800V 1A + - — N— 2 .8 101 it V — F t - 9 Cathode mark 45 £1 B64 l!i|P "3 7 ? ° 00 wmm «T 116 2 n y HB-g- W Type No. Date code
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M1F60
M1F80
50HzJE®
20/im
35/jm
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Untitled
Abstract: No abstract text available
Text: S D V 7 0 1 D Variable Capacitance Diode S O D - 323 Dimension Unit:mm • Description •T V VHF,UHF Tuner AFC VCO for UHF Band Ratio — ■ Features 2,5 1.7 — 2 < > * f 1 0.3 t • Low Reverse Current 1.25 1 r - 0 .5 m m CATHDDE MARK : ln= 1 OnA Max. (V„=20V)
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EQA02-06-AB
Abstract: EQA02-06 EQA02-30 EQA02-09 zener diode BZ 22 m 3401 EQA02-08 EQA02-05 EQA02-07 845ab
Text: E Q A 0 2 s e r ie s 5 0 0 mW ±'J'*'(' *-K : Outline Drawings ZENER DIODE (SILICON PLANER TYPE) ä H f l:^ 7 X a -y hNo. Voltage class LotNo. y —K"^—^ Cathode mark 02.0 MAX00.5 = r MAX. 4 .2 2 6 M IN . 2 6 min- I Features • 'J 'M Sm all type
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EQA02series
500mW)
DO-35
Temper24
EQA02-25
EQA02-28
EQA02-30
EQA02-32
EQA02L33
EQA02-35
EQA02-06-AB
EQA02-06
EQA02-09
zener diode BZ 22
m 3401
EQA02-08
EQA02-05
EQA02-07
845ab
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Diode smd code BU
Abstract: D1FK60 marking A.Y MZ 251 fly wheel smd diode 0.5A fast 600v TJ2A smd 2AT
Text: Super Fast Recovery Diode mtmm o u t l i n e Single Diode D1FK60 U nit I mm Package I 1F Weight 0.058g Typ a v -K -7 -» ' Cathode* mark 600V 0.8A 11 r | Feature • • • • •H Ü H Œ • trr=75ns • V f =1.3V 1 Small SMD High Voltage trr=75ns
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D1FK60
J532-1)
Diode smd code BU
D1FK60
marking A.Y
MZ 251
fly wheel
smd diode 0.5A fast 600v
TJ2A
smd 2AT
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alviso-GM
Abstract: ICS954206 pc123 T7 65R77 AOS4916 3RN10 NS681687 LM358 quanta quanta computer
Text: 1 2 3 4 5 6 7 8 5VPCU BOM MARK Centrino 3V_ALWAYS 5V / 3.3V 15V CLOCK GEN ICS ICS954206 +5V +3V_S5 Kyoto II EW5 PENTIUM-P/CELEROM-M DORTHAN INTEL Mobile_479 CPU Page 3,4 Page 2 A A +3V +3VSUS Page 26 HOST BUS 400/533MHz +5VSUS +1.8VSUS 1.8V / 0.9V CLK_SDRAM0~5,
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ICS954206
400/533MHz
400/533MHZ
PCI1410A
PC141
PC140.
120mil.
BSS138LT1
alviso-GM
ICS954206
pc123 T7
65R77
AOS4916
3RN10
NS681687
LM358
quanta
quanta computer
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marking 33a on semiconductor
Abstract: 2TWR smd diode code marking 33A SMD MARKING CODE tvw marking code vu
Text: Schottky Barrier Diode mtmm o u t l i n e Single Diode M1FS4 U nit I mm Package : M1F W eight 0 .0 2 7 tf T y p 40 V 1.33A &y—Kv—? Cathode mark Feature • /JvgaSMD • Small SMD • V f=0.55V • Low V f=0.55V • P R R S M ^ n '^ > '> x (* !iE • P rrsm Rating
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J532-1
marking 33a on semiconductor
2TWR
smd diode code marking 33A
SMD MARKING CODE tvw
marking code vu
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Untitled
Abstract: No abstract text available
Text: F1200D 超快恢复整流二极管 ltra-Fast Recovery Rectifier Diodes •特征 ● Io ■外形尺寸和印记 Features Outline Dimensions and Mark 12.0A R -7 VRRM 400V ● 玻璃钝化芯片 Glass passivated chip ● ● 耐正向浪涌电流能力高 High surge forward current capability
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F1200D
22-Sep-11
21yangjie
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode OUTLINE Package : 1F D1FS6 Unit ‘mm Weight U.0f>8u Typ a v-K -y-» 60V 1.1A ' Cathode mark 1I r l cos I GO cn Feature • 'J S M D • Small SMD • P r r s m 7 ' K 5 > î/ x ( S S E • P rrsm Rating Type Na ir: CM
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501lz
J532-1)
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