MAGNETORESISTANCE AND SENSOR Search Results

PUT marking

Abstract: DM-230
Contextual Info: DM-230 S O N Y . Magnetoresistance Element Description Package Outline U n it: m m DM-230 a m agnetic sensor using magnetoresistance e ffect is composed of ferrom agnetic m aterial deposited by evaporation on a silicon substrate.lt is suitable fo r angle o f rotation detection and number

nve magnetoresistance

Abstract: AAT001-10E position sensor SB-00-024 TMR Sensor AAT001 angle position sensors
Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available

Tunneling Magnetoresistance

Abstract: AAT001-10E
Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection

Angle sensor magnetoresistance

Abstract: SB-00-024 AAT001-10E TMR Sensor AAT001 nve magnetoresistance Tunneling Magnetoresistance Position Sensors
Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available

Contextual Info: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection

MA 7805 tesla

Abstract: TESLA MA 7805 relative permittivity of permalloy ring core permalloy bh curve Anisotropic magnetoresistance compass angle position sensors relative magnet permeability ring core permalloy curve 7805 n-p-n transistor right siemens wheel speed sensor PWM
Contextual Info: Magnetoresistance MR Transducers And How to Use Them as Sensors 1st. Edition, July 2004 Perry A. Holman, Ph.D. ii Copyright c 2004 Honeywell International Inc. All rights reserved. Acknowledgments The author would like to thank Dr. James R. (Bob) Biard for many, many late night

81116

Abstract: 81-116
Contextual Info: sony . DM-233 Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is suitable for angle of rotation detection. Package Outline

41e magnetic sensor

Abstract: magnetic field magnetoresistance element magnetic resistance element
Contextual Info: SOI^ Y C O R P / C O M P O N E N T PRODS 4TE 0302303 D 0 0 0 3 1 bfl *î DM-233 ~r-&s~-os~ SONY Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is

permalloy magnetization curve

Abstract: Designing With Magnetoresistive Sensors permalloy magnetization permalloy KMZ10
Contextual Info: Honeywell ADVANCE INFORMATION PERMALLOY MAGNETIC FIELD SENSORS OVERVIEW Magnetoresistive MR sensors provide an excellent means of measuring both linear and angular position and displacement. Honeywell magnetoresistive sensors consist of permalloy (NiFe) films deposited on a silicon substrate

Magnetoresistance and sensor

Abstract: DM-230
Contextual Info: SONY CORP/COMPONENT PRODS 4RE Ö3ÖE303 D 000315b 5 DM-230 S O N Y . Magnetoresistance Element Description Package Outline Unit: mm DM-230 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is

Magnetic Field Sensor

Abstract: max 232 DM-232
Contextual Info: DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is

magnetic sensor

Abstract: Magnetic Field Sensor DM-231
Contextual Info: DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is

DM 321

Abstract: magnetoresistance element
Contextual Info: SONY CORP/COMPONENT PRODS M^E D &3&R3&3 D0031b0 ^ DM-231 SO N Y . Magnetoresistance Element / *•Cq Description r DM-231 a magnetic sensor using magnétorésist­ ance effect is. composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is

TLE5011

Abstract: Y135 M135 Angle sensor magnetoresistance
Contextual Info: February 2009 TLE5011 GMR-Based Angular Sensor Application Note TLE5011 Calibration V 1.1 Sensors Edition 2009-02-26 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

magnetic resistance element

Abstract: DC12V
Contextual Info: MR Sensors TDM Series Magneto-Resistance Device High-Sensitivity in Weak Magnetic Fields and High-Speed Response Capability are Offered Together FEATURES ¡ Compact and light weight. ¡ Ferromagnetic thin films made from a permalloy or a nickel-cobalt alloy as an element

DM 321

Contextual Info: DM-231 SONY. Magnetoresistance Element Description Unit: mm Package Outline DM-231 a magnetic sensor using magneto resist­ ance effect is composed of ferrom agnetic material deposited by evaporation on a silicon substrate.lt is suitable fo r angle of rotation detection.

SLP-290B-51

Abstract: 00145B SKS100 msg06 SHS361
Contextual Info: Trigger Devices Sensors Hall sensors lc max mA Vc max tV) PD (mW) VH (mV) Rio (12) SHS1Ì0 InSb linear 12 - 200 21 to 55 (1 V/1 kG) 500 to 1500 DP4 SHS210 InSb linear 10 - 150 21 to 55 (1 V/1 kG) 500 to 1500 CP4 SHS211 InSb linear 20 - 150 50 10 85 (1 V/1

Magnetoresistance and sensor speed

Contextual Info: MR Sensors TDM series Magneto-Resistance Device High Sensitivity in Weak Magnetic Fields and High-Speed Response Capability are Offered Together CONSTRUCTION OF MAGNETIC ENCORDER FEATURES Magnetic Recording Medium 1. Compact and light weight. 2. Ferromagnetic thin films made from a permalloy or a nickel-cobalt alloy as an element

Contextual Info: S O NY CORP/COMPONENT PRODS MTE 0302303 D GGG31b4 1 DM-232 SONY. -r- 4,-s"-ö>s" Magnetoresistance Element Description Unit: mm Package Outline D M -232 a m agnetic sensor using magnetoresistance effect is com posed of ferrom agnetic m aterial deposited by evaporation on a silicon substrate.lt is

HMC1501

Abstract: Anisotropic magnetoresistance Wheatstone Bridge HMC1512 H BRIDGE 80 A AMR sensor proximity sensor design Angle sensor magnetoresistance Rotary Sensors
Contextual Info: SENSOR PRODUCTS APPLICATIONS Linear Displacement Angular Displacement Linear / Angular / Rotary Displacement Sensors HMC1501 / HMC1512 Motor Control Valve Position H Proximity Detection Current Spike Detection Not actual size igh resolution, low power MR sensor

HL-Planartechnik

Abstract: magnetic sensor circuit diagram Anisotropic magnetoresistance datasheets r 1004 transistor sensor magnetic presence "Magnetic Field Sensor" Specialties MS32 Lucas Sensor
Contextual Info: MS32 Switching Sensor • • • AMR Switching-Sensor TDFN Outline 2.5x2.5x0.8 mm3 Temperature Compensated Switching Point Low Power Consumption • DESCRIPTION The MS32 is a magnetic field sensor which is built in the form of a Wheatstone bridge. Each of its four

HMC1512

Abstract: HMC1501 "MR sensor"
Contextual Info: SENSOR PRODUCTS Preliminary APPLICATIONS Linear Displacement Angular Displacement Linear / Angular / Rotary Displacement Sensors HMC1501 / HMC1512 Motor Control Valve Position H Proximity Detection Current Spike Detection Not actual size igh resolution, low power MR sensor

AG930-07

Abstract: AAT001-10E
Contextual Info: AG930-07E Angle Sensor Evaluation Kit SN12425A NVE Corporation 800 467-7141 sensor-apps@nve.com www.nve.com Kit Overview Evaluation Kit Features • AAT001-10E Angle Sensor • Part # 12426 Split-Pole Alnico 5 Round Horseshoe Magnet • Unity-Gain Buffer Amplifier

HMC1501

Abstract: HMC1512 Wheatstone Bridge "MR sensor"
Contextual Info: SENSOR PRODUCTS APPLICATIONS Linear Displacement Angular Displacement Linear / Angular / Rotary Displacement Sensors HMC1501 / HMC1512 Motor Control H Valve Position Proximity Detection Current Spike Detection Not actual size igh resolution, low power MR sensor