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    MAGNACHIP SEMICONDUCTOR LTD. MDD1754 Search Results

    MAGNACHIP SEMICONDUCTOR LTD. MDD1754 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3
    		Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK420G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    MAGNACHIP SEMICONDUCTOR LTD. MDD1754 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MDD1754

    Abstract: mosfet low vgs MagnaChip Semiconductor Ltd. MDD1754
    Contextual Info: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V


    Original     		MDD1754 MDD1754 mosfet low vgs MagnaChip Semiconductor Ltd. MDD1754 PDF

    Contextual Info: Preliminary – Subject to change without notice N-Channel Trench MOSFET, 40V, 16A, 30mΩ General Description Features The MDD1754 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and exellent reliability.


    Original     		MDD1754 MDD1754 PDF

    MDD1754

    Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
    Contextual Info: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V


    Original     		MDD1754 MDD1754 MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs PDF