Untitled
Abstract: No abstract text available
Text: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.
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MN101C94
MN101C94A
MN101CF94D
QFP044-P-1010F
PX-ICE101C/D
PX-PRB101C94-QFP044-P-1010
MAD00052EEM
MN101C94A,
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MN101C94
Abstract: PX-PRB101C94-QFP044-P-1010
Text: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.
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Original
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MN101C94
MN101C94A
MN101CF94D
QFP044-P-1010F
PX-PRB101C94-QFP044-P-1010
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PDF
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QFP044-P-1010F
Abstract: No abstract text available
Text: MN101C94 Series MN101C94A MN101CF94D Mask ROM FLASH ROM byte 32K 64K RAM (byte) 1K 2K Type Internal ROM type QFP044-P-1010F 0.10 µs (at 4.5 V to 5.5 V, 20 MHz) 0.238 µs (at 2.7 V to 5.5 V, 8.39 MHz) 0.477 µs (at 2.0 V to 5.5 V, 4.19 MHz)* *: The lower limit for operation guarantee for flash memory built-in type is 2.5 V.
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Original
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MN101C94
MN101C94A
MN101CF94D
QFP044-P-1010F
PX-ICE101C/D
PX-PRB101C94-QFP044-P-1010
MAD00052EEM
MN101C94A,
MN101CF94D
QFP044-P-1010F
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PDF
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