Series MA4/BA491/1N5000 Silicon General Purpose 3.0 AMP Diodes
Abstract: diodes ba4918 ba4913 ba49180 ba4916 ba4912 ba4914 1N5000 1N5402
Text: EDAL SERIES MA4/BA491/1N5000 SILICON GENERAL PURPOSE 3.0 AMP DIODES INCHES MIN. MAX. 0.048 0.052 0.19 0.21 0.285 0.375 1.00 DIM. A B C D STYLE Io 3 Amp @ Is 200 AMPS Vf 1.3 max. v@ Ir 25 uA max. 50 3.0 amp @ @ PIV @ MILLIMETER MIN. MAX. 1.02 1.30 4.80 5.30
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MA4/BA491/1N5000
DO-201AD
BA491-5
BA491-10
BA491-20
BA491-30
BA491-40
BA491-50
BA491-60
BA491-70
Series MA4/BA491/1N5000 Silicon General Purpose 3.0 AMP Diodes
diodes
ba4918
ba4913
ba49180
ba4916
ba4912
ba4914
1N5000
1N5402
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Untitled
Abstract: No abstract text available
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs
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MA4SW110
MA4SW210
MA4SW310
30dBm
MA4SW110
MA4SW110,
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MASW110
Abstract: MA4 diode MA4SW210 MA4SW310 W110 ARM v7 MA4SW110
Text: MA4SW110 MA4SW210 MA4SW310 HMIC Silicon PIN Diode Switches RoHS Compliant Rev. V7 Features ♦ ♦ ♦ ♦ Broad Bandwidth Specified from 50 MHz to 20 GHz Usable from 50 MHz to 26.5 GHz Lower Insertion Loss and Higher Isolation than Comparable pHempt Designs
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MA4SW110
MA4SW210
MA4SW310
30dBm
MA4SW110,
MA4SW210
MA4SW310
MASW110
MA4 diode
W110
ARM v7
MA4SW110
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FF100R12YT3
Abstract: No abstract text available
Text: Technische Information / technical information FF100R12YT3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# # ! $ % % % 8 # ! = # , > = % "# # $ 9 # % $ &' *+
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FF100R12YT3
FF100R12YT3
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information FS50R12W2T4 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! ! " # # # ! * 8 " = ! + > # = # ! ! " 9 ! 9 $%& ' *
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FS50R12W2T4
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Untitled
Abstract: No abstract text available
Text: an A M P com pany Surface Mount PIN Diode MA4CP101A High Sigma V4.00 Features • • • • • SOT-23 High Performance PIN Diode Designed for High Volume Pick and Place Assembly Low Profile Surface Mount Package High Quality Products Defect Rate Less than 50 PPM
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MA4CP101A
OT-23
OT-23
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sot 14L
Abstract: sot-23 ma4
Text: V an A M P com pany < Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low IR <100nA @ IV, <500nA @ 3 V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band
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100nA
500nA
MA4E2054
MA4E2054A-287T
MA4E2054C-287T
sot 14L
sot-23 ma4
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f2601
Abstract: No abstract text available
Text: This material and lhe information herein is he properly of F uji Electric Co.Ltd.They shall be neither reproduced, copied lent, or disclosed in any way whatsoever for (he use of ;iny third portynor usod (or the manufoc turing purposes wiihout the express written consent of F uji Electric Co. Li d
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MS5F2601
50A/u
f2601
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diode marking jz
Abstract: ESAC25M-02N ESAC25M-02C silicon diode ESAC25M-02D fuji electric marking MK5C18187 ESAC25M02C ESAC25M02D
Text: ES A C 2 5 M—0 2 C , N , D ESAC 25 M—O^tC, N , D FUJI SILICON DIODE 1. SPECIFICATION SCOPE This specification provides the ratings and the test requirement for silicon diode 2. OUT VIEW Body surface shall be smooth and free of contamination.-Dimensions
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esac25m-02c
esac25m-o
ESAC25M-02N
ESAC25M-02D
iM-ID-03
MK5C18187
diode marking jz
silicon diode
fuji electric marking
MK5C18187
ESAC25M02C
ESAC25M02D
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Untitled
Abstract: No abstract text available
Text: A73P24P01 Preliminary Mouse, Keyboard Transmitter Document Title Mouse, Keyboard Transmitter Revision History Rev. No. 0.0 History Issue Date Remark Initial issue January 3, 2002 Preliminary Important Notice: AMIC reserves the right to make changes to its products or to discontinue any integrated circuit product or
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A73P24P01
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SICK WS 150
Abstract: SICK WE9 W9 diode photo-electric switch push button switch 4pin N330 N430 P330 P430 push button switch 2 pin
Text: Product series W9 Laser Photoelectric proximity switch BGS Photoelectric reflex switch W9 L: Laser photoelectric switches: small, light and reliable Through-beam photoelectric switch Objects as small as hairs are detected just as reliably as fast operations are
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WS/WE9L-N330
WS/WE9L-N430
WS/WE9L-P330
WS/WE9L-P430
SICK WS 150
SICK WE9
W9 diode
photo-electric switch
push button switch 4pin
N330
N430
P330
P430
push button switch 2 pin
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md7130
Abstract: smd DIODE B34 diode u2 a54 smd a60 B49 diode smd B34 diode smd B45 diode smd smd b38 B34 SMD Transistor DP83816
Text: 8 7 6 5 4 3 2 1 D D PME Header PCI CLK 33 Mhz Magnetics PCI BUS C AD(31:0) TP RJ45 C MacPHYTERII DP83816 25 MHz XTAL PCI Interface B EEPROM I'face B BIOS ROM These schematics are provided for reference only. For any designs based on these schematics always contact National Semiconductor Corporation BEFORE initiating PCB
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DP83816
10/100M
001uF
C100p-1808
DP83816
md7130
smd DIODE B34
diode u2 a54
smd a60
B49 diode smd
B34 diode smd
B45 diode smd
smd b38
B34 SMD Transistor
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diode u2 a54
Abstract: diode c25 B49 diode smd Diode 133 B34 smd b38 smd DIODE B34 A29 SMD B45 diode smd DP83816 MA6 diode
Text: 8 7 6 5 4 3 2 1 D D PME Header PCI CLK 33 Mhz Magnetics PCI BUS C AD(31:0) TP C RJ45 MacPHYTERII DP83816 25 MHz XTAL PCI Interface B EEPROM I'face B BIOS ROM SERIAL EEPROM A A National Semiconductor - Wired Communications Group Title 10/100 Mb/s Ethernet MacPHYTERII DP83816 Demo Board (Amber)
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DP83816
DP83816
10/100M
001uF
C100p-1808
diode u2 a54
diode c25
B49 diode smd
Diode 133 B34
smd b38
smd DIODE B34
A29 SMD
B45 diode smd
MA6 diode
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Beckman ra6
Abstract: A17 ZENER diode MA6 rs232 driver RM73B3A BLM21A121SP zener rohm C119 C120 DS34C86T R106
Text: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page E D C Original design Rev 1.1: TMROUT0[PIO28] changed to SRDY[PIO35]. Nets on DS34C86T’s changed. Pull-ups and pull-downs added to MACH. Pinouts corrected on diode and MOSFET on USB page.
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AM186CC
186EXP/TIB
74ACT04
16x125
Beckman ra6
A17 ZENER diode
MA6 rs232 driver
RM73B3A
BLM21A121SP
zener rohm
C119
C120
DS34C86T
R106
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WL8G-P2231
Abstract: WL8-P2131 WL8-P2231 SICK WL8G-P2231 PL20F WL8G-P2131 WL8G-N2131 WL8G-N2231 P1131 P2131
Text: DB_W8_en.fm Seite 1 Donnerstag, 15. November 2007 7:49 07 Product series W8 Photoelectric proximity switch BGS Photoelectric reflex switch W8 series miniature photoelectric switches: Small, fast and secure at close range enables a fast response time where
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PL80A:
P250F
PL20F
PL10F
PL80A
WL8G-N1131
WL8G-N2131
2007-xx-xx
WL8G-N2231
WL8G-P1131
WL8G-P2231
WL8-P2131
WL8-P2231
SICK WL8G-P2231
PL20F
WL8G-P2131
WL8G-N2131
WL8G-N2231
P1131
P2131
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Zener Diode BA11
Abstract: SFs SOT23-3 zener diode A29 flyback transformer design for mosFET Zener Diode BA19 Beckman ra6 PAH25 74ac126 PAH18 router board r52 hn
Text: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Page Page Page Page Page Page Page Page Page E Rev 1.0: Original design Rev 1.1: TMROUT0[PIO28] changed to SRDY[PIO35]. Nets on DS34C86T’s changed. Pull-ups and pull-downs added to MACH. Pinouts corrected on diode and MOSFET on USB page.
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Am186CC/CH/CH
AM186CC
186EXP/TIB
Am186CC/CH/CU
T7256
79C32
79C32
16x12
Zener Diode BA11
SFs SOT23-3
zener diode A29
flyback transformer design for mosFET
Zener Diode BA19
Beckman ra6
PAH25
74ac126
PAH18
router board r52 hn
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WL100L-F2131
Abstract: WT100L-F2241 WL100L-F2241 WL100L-F2231 702 pnp 3pin WE-100 SICK distance sensor WL100L-E1131 WT100L-F2141 WE-100l-e2231
Text: Photoelectric proximity switch, WT100 Laser, energetic Dimensional drawing 20 Laser sensor in mini-format 1 2 31 25.4 Easy alignment by Class 2 red light laser 11 3 Photoelectric proximity switch 13.4 19.8 Scanning distance 0 . 450 mm 3 1 2.8 10.3 Switching frequency 2000 Hz
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WT100
WS/WE100
WS/WE100L-E1131
WS/WE100L-E2131
WS/WE100L-E2231
WS/WE100L-F1131
WS/WE100L-F2131
WS/WE100L-F2231
WL100L-F2131
WT100L-F2241
WL100L-F2241
WL100L-F2231
702 pnp 3pin
WE-100
SICK distance sensor
WL100L-E1131
WT100L-F2141
WE-100l-e2231
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1990-0730
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS 74F657 Octal transceiver with 8-bit parity generator/checker Product data Supersedes data of 1990 Jul 30 Philips Semiconductors 2003 Feb 04 Philips Semiconductors Product data Octal transceiver with 8-bit parity generator/checker 74F657
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74F657
74F245
74F280A
1990-0730
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules FF100R12YT3 Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values !F3EF2 "#CEE32 $1322D14% F3EF2 3#CEE326FE4%3
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FF100R12YT3
CEE32
1322D14
CEE326
832CF5CD
1CE93
2313ECEC
3265CDDC14ECF
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i r 032p
Abstract: No abstract text available
Text: MA4E2062 Series M/A-COM Preliminary Specifications Silicon Schottky Diode Ring Quads Features • • • • • • • A IÂ C G H æ r f Package Outlines Small Size Designed for High Volume, Low Cost Closely Matched Junctions High Reliability and Mechanically Rugged
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MA4E2062
OT-143
i r 032p
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D1N916
Abstract: la1 d22 a65 d1n916a EPM 205 thermal printer controller jeida v4.1 GD75232SOP virge GD75232S txc 14.318MHZ GD 75232 DATASHEET
Text: Point of Sale Terminal Design Guide Application Note May 1998 Order Number: 273170-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability
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100uF
470pF
LGS260-DO
D1N916
la1 d22 a65
d1n916a
EPM 205 thermal printer controller
jeida v4.1
GD75232SOP
virge
GD75232S
txc 14.318MHZ
GD 75232 DATASHEET
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5608F5
Abstract: sfs sot23 AM186CC SP211ECT SP211HCT usbFB sot-23 diode m9 79C32 prm 100k 7C53
Text: 1 2 3 4 5 Table of Contents Page Page Page Page Page Page Cover Sheet Am186CC DRAM, FLASH ISDN Interface PC Interface - DCE, USB Power, Crystal, TIP, Misc. NOTE: This schematic shows the S/T ISDN interface population option. A A ISDN Terminal Adapter Reference Design
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Am186CC
Am29F200
Am29F400
SP211HCT
SP211ECT
74ACT04
5608F5
sfs sot23
SP211ECT
usbFB
sot-23 diode m9
79C32
prm 100k
7C53
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ic 1496 specifications
Abstract: MAT14 ADR01 MS-012-AB OP1177 MAT14ARZ transistor IREF 460 log and antilog amplifier
Text: Matched Monolithic Quad Transistor MAT14 Low offset voltage: 400 µV maximum High current gain: 300 minimum Excellent current gain match: 4% maximum Low voltage noise density at 100 Hz, 1 mA 3 nV/√Hz maximum Excellent log conformance Bulk resistance rBE = 0.6 Ω maximum
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MAT14
MAT14
MAT14ARZ
MAT14ARZ-R7
MAT14ARZ-RL
14-Lead
ic 1496 specifications
ADR01
MS-012-AB
OP1177
MAT14ARZ
transistor IREF 460
log and antilog amplifier
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Untitled
Abstract: No abstract text available
Text: Matched Monolithic Quad Transistor MAT14 Low offset voltage: 400 µV maximum High current gain: 300 minimum Excellent current gain match: 4% maximum Low voltage noise density at 100 Hz, 1 mA 3 nV/√Hz maximum Excellent log conformance Bulk resistance rBE = 0.6 Ω maximum
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MAT14
MAT14
MAT14ARZ
MAT14ARZ-R7
MAT14ARZ-RL
14-Lead
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