MA26 Search Results

Contextual Info: MA2601S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V17 Silicon epitaxial planar type For VCO Unit: mm • Features 3  Absolute Maximum Ratings Ta = 25°C 0.39+0.01 −0.03 Symbol Rating Unit Reverse voltage VR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA26728 Silicon epitaxial planar type For super high speed switching circuits Unit: mm • Features  Low forward voltage VF , good wave detection efficiency η

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V11 Silicon epitaxial planar type Unit: mm 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 M Di ain sc te on na tin nc ue e/ d • Good linearity and large capacitance-ratio in CD − VR relation

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V22 Silicon epitaxial planar type Unit: mm 2 1 0.39+0.01 −0.03 1.00±0.05 M Di ain sc te on na tin nc ue e/ d • Good linearity and large capacitance-ratio in CD − VR relation

Contextual Info: Variable Capacitance Diodes MA26V05 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Reverse voltage DC VR 10 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching Unit: mm • Features  Low forward dynamic resistance rf  Less voltage dependence of diode capacitance CD 3

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V04 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Reverse voltage VR 6 V Junction temperature

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V05 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Reverse voltage VR 10 V Junction temperature

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V15 Silicon epitaxial planar type Unit: mm 2 1 0.39+0.01 −0.03 1.00±0.05 M Di ain sc te on na tin nc ue e/ d • Good linearity and large capacitance-ratio in CD − VR relation

Contextual Info: Variable Capacitance Diodes MA26V02 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN diodes MA26P07 Silicon epitaxial planar type For high frequency switch Unit: mm • Features  Small terminal capacitance Ct  Low forward dynamic resistance rf  Miniature package and surface mounting type

Contextual Info: Variable Capacitance Diodes MA26V16 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V11 Silicon epitaxial planar type Unit: mm 2 • Features 1 0.25±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.39+0.01 −0.03 1.00±0.05 0.25±0.05

MA26V01

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V01 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Reverse voltage VR 6 V Junction temperature

Contextual Info: Variable Capacitance Diodes MA26V15 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125

Contextual Info: Variable Capacitance Diodes MA26V03 Silicon epitaxial planar type Unit: mm 3 2 • Features 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Reverse voltage DC VR 6 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA26077 Silicon epitaxial planar type For band switching Unit: mm • Features  Low forward dynamic resistance rf  Less voltage dependence of diode capacitance CD 3

MA26LS32QB

Abstract: MA26LS32 RS-423 A26LS32 mrch1
Contextual Info: MA26LS32QB Quad Differential Line Receiver F A IR C H IL D A Schlum berger C om pany MIL-STD-883 July 1986 — Rev 01 Advance Information Description The ¿¿A26LS32QB is a quad line receiver designed to m eet the requirements of EIA Standards RS-422 and RS-423, and Federal Standards 1020 and 1030 for bal­

MA26V03

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V03 Silicon epitaxial planar type Unit: mm 3 M Di ain sc te on na tin nc ue e/ d 2 0.60±0.05 For VCO • Features 1 ue pl d in an c se ed lud pl vi an m m es si

MA26V17

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V17 Silicon epitaxial planar type For VCO Unit: mm • Features 3 M Di ain sc te on na tin nc ue e/ d 2 1 Junction temperature Storage temperature Symbol Rating

MA26V02

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V02 Silicon epitaxial planar type Unit: mm 3 M Di ain sc te on na tin nc ue e/ d 2 0.60±0.05 For VCO • Features 1 ue pl d in an c se ed lud pl vi an m m es si

MA26V14

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V14 Silicon epitaxial planar type Unit: mm 3 M Di ain sc te on na tin nc ue e/ d 2 0.60±0.05 For VCO • Features 1 Symbol 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05

MA26V12

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Variable Capacitance Diodes MA26V12 Silicon epitaxial planar type Unit: mm 3 M Di ain sc te on na tin nc ue e/ d 2 0.60±0.05 For VCO • Features 1 Symbol 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05