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    MA1070 Price and Stock

    Belden Inc FM3MMA1070M

    FMT OM3 MPO12(M-M) A 12F 70M
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    DigiKey FM3MMA1070M Bulk 1
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    Belden Inc FM4MMA1070MPMDA

    FMT OM4 MPO12(M-M) A 12F 70M
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    DigiKey FM4MMA1070MPMDA Bulk 1
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    Mouser Electronics FM4MMA1070MPMDA
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    EDSYN MA 1070

    Spare Lens, Magnifying 7X; Accessory Type:Lens; For Use With:Mageyes Ma10 And Ma10Ls Series Adjustable Magnifiers; Product Range:-; Magnification:7X; Magnifier Type:Magnifier Accessories Rohs Compliant: Na |Edsyn MA 1070
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    Newark MA 1070 Bulk 1
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    Panasonic Electronic Components MA1070500L

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    Bristol Electronics MA1070500L 1,334
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    MA1070500L 1,325 7
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    Panasonic Electronic Components MA2Q70500L

    1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC (Also Known As: MA1070500L)
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    Quest Components MA2Q70500L 3,600
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    MA2Q70500L 1,110
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    MA2Q70500L 1,060
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    MA2Q70500L 1,060
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    MA2Q70500L 36
    • 1 $1.75
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    MA1070 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA10700 Panasonic Diode Original PDF
    MA10700 Panasonic DIODE SCHOTTKY DIODE 40V 0.5A 3SMINI3-F1 Original PDF
    MA10700 Panasonic Silicon epitaxial planar type Original PDF
    MA10701 Panasonic Diode Original PDF
    MA10701 Panasonic DIODE SCHOTTKY DIODE 30V 0.7A 3MINI3-G1 Original PDF
    MA10701 Panasonic Silicon epitaxial planar type Original PDF
    MA10702 Panasonic DIODE SCHOTTKY DIODE 20V 0.5A 3SMINI3-F1 Original PDF
    MA10702 Panasonic Schottky Barrier Diodes (SBD) Original PDF
    MA10703 Panasonic DIODE SCHOTTKY DIODE 20V 0.5A 3MINI3-G1 Original PDF
    MA10703 Panasonic Schottky Barrier Diodes (SBD) Original PDF
    MA10704 Panasonic Schottky Barrier Diodes (SBD) Original PDF
    MA10705 Panasonic Diode Original PDF
    MA10705 Panasonic Schottky Barrier Diodes (SBD) Original PDF
    MA10705 Panasonic DIODE SCHOTTKY DIODE 30V 1.5A 2NMINIP2-J1 Original PDF
    MA10705-00L Panasonic DIODE SCHOTTKY DIODE 30V 1.5A 2NMINIP2-J1 Original PDF

    MA1070 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    tr 30 f 124

    Abstract: MA10705 IR 2153
    Text: MA111 Schottky Barrier Diodes SBD MA10705 Silicon epitaxial planer type Unit : mm For high-frequency rectification 4.4±0.3 • Features Mini-Power type package (2-pin) 2 1 voltage) type : VF < 0.37V(at IF=1.0A) +0.1 0.25–0.05 ● Low VF (forward 1.4±0.2


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    MA111 MA10705 tr 30 f 124 MA10705 IR 2153 PDF

    MA10704

    Abstract: MA2J704 SC-76
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J704 (MA10704) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 1 • Features


    Original
    2002/95/EC) MA2J704 MA10704) MA10704 MA2J704 SC-76 PDF

    MA10700

    Abstract: MA3J700
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time trr


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    MA3J700 MA10700) MA10700 MA3J700 PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary


    Original
    MA3X703 MA10703) PDF

    tr 30 f 124

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1.5 A rectification is possible • Low forward voltage: VF < 0.37 V (at IF = 1 A)


    Original
    MA2Q705 MA10705) tr 30 f 124 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J704 (MA10704) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 2 0.5±0.1 0.16+0.1 –0.06


    Original
    2002/95/EC) MA2J704 MA10704) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05


    Original
    2002/95/EC) MA3X701 MA10701) SC-59 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original
    2002/95/EC) MA3X703 MA10703) PDF

    panasonic ma diodes sc-59 Marking

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary


    Original
    MA3X703 MA10703) panasonic ma diodes sc-59 Marking PDF

    50Hz sine wave generator

    Abstract: MA10701 MA10701 SCHOTTKY diode
    Text: MA111 Schottky Barrier Diodes SBD MA10701 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 +0.2 IF(AV)= 700mA rectification possible 1 0.95 ● type package (3-pin)


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    MA111 MA10701 700mA O-236 SC-59 50Hz sine wave generator MA10701 MA10701 SCHOTTKY diode PDF

    MA10702

    Abstract: MA3J702
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1


    Original
    2002/95/EC) MA3J702 MA10702) MA10702 MA3J702 PDF

    MA10704

    Abstract: MA2J704
    Text: Schottky Barrier Diodes SBD MA2J704 (MA10704) Silicon epitaxial planar type Unit : mm For super-high speed switching circuit Reverse voltage (DC) 0.4 ± 0.1 Symbol Rating Unit VR 20 V VRRM 20 V IFM 300 mA Average forward current IF(AV) 200 mA Non-repetitive peak forward


    Original
    MA2J704 MA10704) MA10704 MA2J704 PDF

    MA10703

    Abstract: MA3X703
    Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible • Small reverse current I R (About 1/10 of I R of the ordinary


    Original
    MA3X703 MA10703) MA10703 MA3X703 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original
    2002/95/EC) MA3J700 MA10700) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible


    Original
    2002/95/EC) MA3J700 MA10700) PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 0.9±0.1 1.3±0.1 2.0±0.2 5° • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit


    Original
    MA3J702 MA10702) PDF

    MA10700

    Abstract: MA3J700
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1


    Original
    2002/95/EC) MA3J700 MA10700) MA10700 MA3J700 PDF

    MA3X701

    Abstract: MA10701
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 2 (0.65) ue pl d in an c se ed lud pl


    Original
    2002/95/EC) MA3X701 MA10701) MA3X701 MA10701 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl


    Original
    2002/95/EC) MA3X703 MA10703) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 VRRM Forward current (Average)


    Original
    2002/95/EC) MA3X701 MA10701) PDF

    MA3J702

    Abstract: MA10702
    Text: Schottky Barrier Diodes SBD MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible • Small reverse current I R (About 1/10 of I R of the ordinary


    Original
    MA3J702 MA10702) MA3J702 MA10702 PDF

    MA10702

    Abstract: MA3J702
    Text: Schottky Barrier Diodes SBD MA3J702 (MA10702) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 For high-frequency rectification 1.25 ± 0.1 0.425 • Features • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Low IR (reverse current) type. (About 1/10 of IR of the ordinary


    Original
    MA3J702 MA10702) MA10702 MA3J702 PDF

    MA10703 SCHOTTKY diode

    Abstract: MA10703 MA3X703
    Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.25 − 0.05 0.65 ± 0.15 Reverse voltage (DC) 1.45 0.95 + 0.1 + 0.1 0.16 − 0.06 0.8 1.1 − 0.1 + 0.2 2 • Absolute Maximum Ratings Ta = 25°C


    Original
    MA3X703 MA10703) MA10703 SCHOTTKY diode MA10703 MA3X703 PDF

    marking M2w

    Abstract: MA10700 MA3J700
    Text: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Symbol Rating Unit VR 40 V Repetitive peak reverse-voltage VRRM 40 V Average forward current


    Original
    MA3J700 MA10700) marking M2w MA10700 MA3J700 PDF