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    MA 2831 Search Results

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    72831L10TF8 Renesas Electronics Corporation 2K x 9 DualSync FIFO, 5.0V Visit Renesas Electronics Corporation
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    74ALVC162831DF8 Renesas Electronics Corporation 1 TO 4 ADDRESS REGISTER D Visit Renesas Electronics Corporation
    72831L10PFG Renesas Electronics Corporation 2K x 9 DualSync FIFO, 5.0V Visit Renesas Electronics Corporation
    72831L15TF8 Renesas Electronics Corporation 2K x 9 DualSync FIFO, 5.0V Visit Renesas Electronics Corporation
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    MA 2831 Price and Stock

    CML Microcircuits Plc MMA-283136-R5EV

    BOARD EVAL FOR MMA-283136-R5
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    DigiKey MMA-283136-R5EV Box 1
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    Analog Devices Inc MAX2831ETM+

    RF Transceiver 2.4GHz to 2.5GHz, 802.11g RF Transceiver
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    Mouser Electronics MAX2831ETM+ 62
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    Silex Technology America Inc SX-SDMAC-2831S R2 SP

    Multiprotocol Modules Wi-Fi+BLE Mod 2 ufl connect SamPck
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    Mouser Electronics SX-SDMAC-2831S R2 SP 62
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    Analog Devices Inc MAX2831EVKIT+

    WiFi Development Tools - 802.11 Eval Kit MAX2831 (2.4GHz to 2.5GHz, 802.
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    Quantic X-Microwave XM-A283-1204D

    RF Development Tools Band Pass Filters, Lumped ElementSMT
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    Mouser Electronics XM-A283-1204D
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    MA 2831 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise 96 12009 Applications Voltage stabilization Order Instruction


    Original
    PDF TZS4678. TZS4717 TZS4678â TZS4678 300K/W mmx50 D-74025 12-Mar-01

    1N4681

    Abstract: 1N4682 1N4683 1N4684 1N4685 1N4686 1N4717 1N4678 1N4679 1N4680
    Text: 1N4678.1N4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications 94 9367 Voltage stabilization Order Instruction Type


    Original
    PDF 1N4678. 1N4717 1N4678 1N4678 D-74025 09-Mar-01 1N4681 1N4682 1N4683 1N4684 1N4685 1N4686 1N4717 1N4679 1N4680

    diode V6 96

    Abstract: Book Microelectronic 2 pin ir transmitter U429B-FP
    Text: U429B-FP Driver For IR Transmitter Diodes Current Sink Technology: Bipolar Features D D D D D D Minimum driver current I4 = 0.4 mA D Additional switching transistor IC = 20 mA Constant current for IR signal 320 mA Undervoltage control with indicator driver


    Original
    PDF U429B-FP 27-Feb-96 D-74025 diode V6 96 Book Microelectronic 2 pin ir transmitter U429B-FP

    Telefunken tk 19

    Abstract: TZS4678 TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4685 TZS4717
    Text: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise 96 12009 Applications Voltage stabilization Absolute Maximum Ratings


    Original
    PDF TZS4678. TZS4717 300K/W 50mmx50mmx1 D-74025 Number85613 01-Apr-99 Telefunken tk 19 TZS4678 TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4685 TZS4717

    1N4678

    Abstract: 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685 1N4686 1N4717
    Text: 1N4678.1N4717 Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications 94 9367 Voltage stabilization Order Instruction


    Original
    PDF 1N4678. 1N4717 1N4678 1N4678 D-74025 09-Mar-01 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685 1N4686 1N4717

    1N4683 data

    Abstract: Telefunken tk 19 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685
    Text: 1N4678.1N4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications 94 9367 Voltage stabilization Absolute Maximum Ratings


    Original
    PDF 1N4678. 1N4717 D-74025 01-Apr-99 1N4683 data Telefunken tk 19 1N4678 1N4679 1N4680 1N4681 1N4682 1N4683 1N4684 1N4685

    TZS4678

    Abstract: TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4717 TZS4678-GS08
    Text: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise 96 12009 Applications Voltage stabilization Order Instruction


    Original
    PDF TZS4678. TZS4717 TZS4678 TZS4678 300K/W mmx50 D-74025 12-Mar-01 TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4717 TZS4678-GS08

    Telefunken 1520

    Abstract: TZS4678 TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4685 TZS4717
    Text: TZS4678.TZS4717 Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise 96 12009 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C


    Original
    PDF TZS4678. TZS4717 300K/W 50mmx50mmx1 100the D-74025 04-Jun-97 Telefunken 1520 TZS4678 TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4685 TZS4717

    Untitled

    Abstract: No abstract text available
    Text: 1N4678.1N4717 Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise Applications 94 9367 Voltage stabilization Order Instruction Type


    Original
    PDF 1N4678. 1N4717 1N4678â 1N4678 D-74025 09-Mar-01

    TZS4678

    Abstract: TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4717
    Text: TZS4678.TZS4717 Vishay Semiconductors Silicon Epitaxial Planar Z–Diodes Features D D D D Zener voltage specified at 50 mA Maximum delta VZ given from 10 mA to 100 mA Very high stability Low noise 96 12009 Applications Voltage stabilization Order Instruction


    Original
    PDF TZS4678. TZS4717 TZS4678 TZS4678 300K/W mmx50 D-74025 12-Mar-01 TZS4679 TZS4680 TZS4681 TZS4682 TZS4683 TZS4684 TZS4717

    83627

    Abstract: IEC60965 IL410 IL4108 VDE0884 OPTOCOUPLER trigger thyristor scr zero crossing detector mosfet thyristor using zero crossing circuit
    Text: IL410/ IL4108 VISHAY Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current Features • • • • • • • • High Input Sensitivity IFT = 2.0 mA, PF = 1.0 IFT = 5.0 mA, PF ≤ 1.0 300 mA On-State Current


    Original
    PDF IL410/ IL4108 E52744 IEC60950 IEC60965 VDE0884) D-74025 20-Nov-03 83627 IEC60965 IL410 IL4108 VDE0884 OPTOCOUPLER trigger thyristor scr zero crossing detector mosfet thyristor using zero crossing circuit

    triac driving optocoupler for 800v

    Abstract: OPTOtriac zero crossing ZERO VOLTAGE SWITCH
    Text: IL410/ IL4108 VISHAY Vishay Semiconductors Zero Voltage Crossing Triac Optocoupler 600 V/ 800V Features • • • • • • • • High Input Sensitivity IFT = 2.0 mA, PF = 1.0 IFT = 5.0 mA, PF ≤ 1.0 300 mA On-State Current Zero Voltage Crossing Detector


    Original
    PDF IL410/ IL4108 i179030 E52744 D-74025 30-Oct-03 triac driving optocoupler for 800v OPTOtriac zero crossing ZERO VOLTAGE SWITCH

    triac driving optocoupler for 800v

    Abstract: No abstract text available
    Text: IL410/ IL4108 VISHAY Vishay Semiconductors Zero Voltage Crossing Triac Optocoupler 600 V/ 800V Features • • • • • • • • High Input Sensitivity IFT = 2.0 mA, PF = 1.0 IFT = 5.0 mA, PF ≤ 1.0 300 mA On-State Current Zero Voltage Crossing Detector


    Original
    PDF IL410/ IL4108 i179030 E52744 D-74025 06-Oct-03 triac driving optocoupler for 800v

    IL4108

    Abstract: No abstract text available
    Text: IL410/ IL4108 VISHAY Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current Features • • • • • • • • High Input Sensitivity IFT = 2.0 mA, PF = 1.0 IFT = 5.0 mA, PF ≤ 1.0 300 mA On-State Current


    Original
    PDF IL410/ IL4108 i179030 E52744 VDE0884) D-74025 20-Nov-03 IL4108

    Untitled

    Abstract: No abstract text available
    Text: WT-CG1FJ High Power Light Source Product Specification Specification Material Total Flux Minimum 200 lm @ 18 mA/Ta = 25oC Correlated Color Temperature 2400 K~3000 K @ 18 mA/Ta = 25 oC VF Typical 108 V @ 18 mA/ Ta = 25 oC IR WT standard Resin Warm White Tray


    Original
    PDF 18-Nov-2013

    optotriac

    Abstract: OPTOtriac zero crossing thyristor SCR 406 83627 VDE0884 IEC60065 IL410 IL4108 OPTOCOUPLER trigger thyristor scr IL410-X009
    Text: IL410/ IL4108 Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current Features • • • • • • • • High Input Sensitivity IFT = 2.0 mA, PF = 1.0 IFT = 5.0 mA, PF ≤ 1.0 300 mA On-State Current Zero Voltage Crossing Detector


    Original
    PDF IL410/ IL4108 2002/95/EC 2002/96/EC UL1577, E52744 IEC60950 IEC60065 VDE0884) 607ed optotriac OPTOtriac zero crossing thyristor SCR 406 83627 VDE0884 IEC60065 IL410 IL4108 OPTOCOUPLER trigger thyristor scr IL410-X009

    83627

    Abstract: IEC60065 IL410 IL4108 VDE0884 OPTOCOUPLER trigger thyristor scr
    Text: IL410/ IL4108 Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current Features • • • • • • • • High Input Sensitivity IFT = 2.0 mA, PF = 1.0 IFT = 5.0 mA, PF ≤ 1.0 300 mA On-State Current Zero Voltage Crossing Detector


    Original
    PDF IL410/ IL4108 2002/95/EC 2002/96/EC UL1577, E52744 IEC60950 IEC60065 VDE0884) D-74025 83627 IEC60065 IL410 IL4108 VDE0884 OPTOCOUPLER trigger thyristor scr

    U6795B-D

    Abstract: 10KMA
    Text: U6795B-D TELEFUNKEN Semiconductors LED Driver Description U6795B-D is an LED driver optimized for high-speeddata transmission applications up to 220 MB/s. The maximum output current is 100 mA. Output current can be set from 25 mA to 100 mA by an external resistor at the


    Original
    PDF U6795B-D U6795B-D 100-ps SO-16 D-74025 10KMA

    BFP181TW

    Abstract: marking W18 BFP181TRW BFP181T w18 transistor
    Text: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    Original
    PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 marking W18 w18 transistor

    marking W18

    Abstract: w18 transistor BFP181TRW SOT W18 BFP181T BFP181TW
    Text: BFP181T/BFP181TW/BFP181TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    Original
    PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 marking W18 w18 transistor SOT W18

    BFP280T

    Abstract: BFP280TRW BFP280TW
    Text: BFP280T/BFP280TW/BFP280TRW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA. Features


    Original
    PDF BFP280T/BFP280TW/BFP280TRW BFP280TW BFP280TRW BFP280T D-74025 Jan-99

    NPN planar RF transistor

    Abstract: No abstract text available
    Text: BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features


    Original
    PDF BFP181T/BFP181TW/BFP181TRW BFP181TW BFP181TRW BFP181T D-74025 20-Jan-99 NPN planar RF transistor

    Untitled

    Abstract: No abstract text available
    Text: BFP182T/BFP182TW/BFP182TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. Features


    Original
    PDF BFP182T/BFP182TW/BFP182TRW BFP182TW BFP182TRW BFP182T D-74025 20-Jan-99

    U429B-FP

    Abstract: No abstract text available
    Text: Tem ic U429B-FP S e m i c o n d u c t o r s Driver For IR Transmitter Diodes Current Sink Technology: Bipolar Features • Constant current for IR signal 320 mA • Minimum driver current I4 = 0.4 mA • Undervoltage control with indicator driver • Additional switching transistor Ic = 20 mA


    OCR Scan
    PDF U429B-FP D-74025 27-Feb-96 U429B-FP