1152
Abstract: 1152-word
Text: MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP〉 ASSP〉 M66252P/FP M66252P/FP 1152 x 8-BIT LINE MEMORY FIFO 1152 x 8-BIT LINE MEMORY (FIFO) FEATURES • Memory construction . . 1152words x 8bits (dynamic memory)
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M66252P/FP
1152words
M66252
1152
1152-word
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Untitled
Abstract: No abstract text available
Text: M66252FP 1/2 IL00 * C-MOS 1152 x 8-BIT LINE MEMORY (FIFO) —TOP VIEW— 13 Q0 OUT 1 24 D0 14 IN 15 Q1 OUT 23 D1 2 16 IN 21 Q2 OUT 3 22 D2 22 IN 23 Q3 OUT RE IN 4 21 D3 5 20 WE 24 IN 20 IN 19 RRES IN 19 6 7 GND WRES IN VDD (+5V) 18 17 5 6 RCK IN
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M66252FP
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12-Bit Parallel-IN Serial-OUT Shift Register
Abstract: M51660L M52770ASP M52778SP M5230L m52760sp M51971L m51957bl series M54640 M65817AFP
Text: ASSPs ICs for Visual and Audio Equipments ICs for Information and Communication Equipments ICs for Control , Driver and Others General Purpose ICs Preceding Page MITSUBISHI ELECTRIC CORPORATION ICs for Visual and Audio Equipments Sound Processor TV Sets
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12-bit
24P4D/
24P2N-B
M66311P/FP
52MHz
12-Bit Parallel-IN Serial-OUT Shift Register
M51660L
M52770ASP
M52778SP
M5230L
m52760sp
M51971L
m51957bl series
M54640
M65817AFP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66252P/FP 1152 x 8-BIT LINE MEMORY (FIFO) DESCRIPTION The M66252P/FP is a high-speed line memory with a FIFO (First In First Out) structure of 1152-word x 8-bit configuration which uses high-performance silicon gate CMOS process
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M66252P/FP
M66252P/FP
1152-word
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66252P/FP 1152 x 8 -BIT LIN E M E M O R Y (FIFO ) DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 66 25 2P /F P is a h igh -spee d line m em o ry w ith a F IFO (First In First O ut) structure of 1152-word x 8-bit configuration w h ich uses h ig h -p e rfo rm a n c e silico n gate C M O S p ro c e s s
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M66252P/FP
1152-word
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66252P/FP 1152 x 8-BIT LINE MEMORY (FIFO) DESCRIPTION The M66252P/FP is a high-speed line memory with a FIFO (First In First Out) structure of 1152-word x 8-bit configuration which uses high-performance silicon gate CMOS process
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OCR Scan
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M66252P/FP
M66252P/FP
1152-word
1152words
002G577
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24P2W
Abstract: No abstract text available
Text: SEM CONDUCTOR 1K BYTE FIFO MEMORY New s HIGH SPEED LINE MEMORY WITH FIFO FUNCTION AND HIGH-SPEED ACCESS FOR IMAGE PROCESSING M66252P/FP •FIFO First-In First-Out function •Completely independent and asynch ronous operation of read and write •High-speed line memory with high
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M66252P/FP
24P4Y
24P2W
24P2W
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIGITAL ASSP M66252P/FP 1152 x 8-BIT LINE MEMORY (FIFO) DESCRIPTION The M66252P/FP is a high-speed line memory with a FIFO (First In First Out) structure of 1152-word x 8-bit configuration which uses high-perform ance silicon gate CMOS process
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M66252P/FP
M66252P/FP
1152-word
1152wordb
Mar/98
24P2W-A
P24-P-450-1
24pin
450mil
003bE43
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PDF
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m66251
Abstract: M66251AFP M66251FP m66253 m66251p fifo memory M66251AP
Text: b 2 M «25 00241,25 0 7 b MITI HIGH-SPEED 5K BYTE FIFO MEMORY M ÍO N W ACHIEVES CYCLE TIME OF 40ns SUITABLE FOR HIGH-SPEED PROCESSING OF DIGITAL IMAGE JC T « fJEWS Â P P L Complete Independence of Write/ Read Functions Asynchronous Operation ©High Speed Operation
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66251AP/AFP
5120X8
1152X8
m66251
M66251AFP
M66251FP
m66253
m66251p
fifo memory
M66251AP
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M66253FP
Abstract: No abstract text available
Text: bSH^öES 0024b30 433 BSHIT1 5K BYTE X 2 FIFO MEMORY I SEMICONDUCTOR TWO BUILT-IN 5K BYTE FIFO MEMORY CIRCUITS HIGH-SPEED FIFO MEMORY SUITABLE FOR DIGITAL PLAIN-M PER COPIERS Ne w s M66253FP The M 66253FP is designed to operate at higher speeds than the conventional
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0024b30
M66253FP
66253FP
45WmtnttdtfrSSOP1
5120x8
M66253FP
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M66252P/FP
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20MS
Abstract: 24P2W m66240
Text: •PERIPHERAL IC FOR MICROCOMPUTER AND MEMORY CONTINUED Functron 4 channel 16-bit PWM generator 4 channel 12-bit PWM generator High-drive, high-speed parallel I/O expander T yp elfo. i Package Outlire! Wal»Proœss M66240P/FP M66242P/FP M66500SP/FP Features
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16-bit
50kHz
2V/24V
M66240P/FP
24P4D
/24P2W
12-bit
M66250P/FP
28P4Y/28P2W
M66256FP
20MS
24P2W
m66240
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m66251
Abstract: m66251p 24P2W
Text: S b2M1ä5S 0DS4b57 W MMIT1 5K BYTE FIFO MEMORY SEMICONDUCTOR FIFO FUNCTION, l-LINE MEMORY CAPACITY ARE BUILT-IN HIGH-SPEED LINE MEMORY SUITABLE FOR DIGITAL PPC News M66251P/FP/L A P P L I C A T I High-speed picture data processing. «FIFO Function Built-in First-In First-Out Function for
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0DS4b57
300mil
450mil
400mil
M66251P/FP/L
24P2W
28P5L
M66251P/FP.
m66251
m66251p
24P2W
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Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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OCR Scan
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M66252P/FP
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