1M x 16-Bit x 4 Banks synchronous DRAM
Abstract: No abstract text available
Text: ESMT M52S64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)
|
Original
|
PDF
|
M52S64164A
M52S64164A-7
133MHz
1M x 16-Bit x 4 Banks synchronous DRAM
|
Untitled
Abstract: No abstract text available
Text: ESMT M52S64164A Revision History Revision 1.0 Feb. 07, 2007 -Original Revision 1.1 (Apr. 20, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Sep. 10, 2007) - Add -7.5 spec Revision 1.3 (Mar.11, 2008) - Modify ICC spec - Modify AC parameters
|
Original
|
PDF
|
M52S64164A
|
Untitled
Abstract: No abstract text available
Text: ESMT M52S64164A Revision History Revision 1.0 Feb. 07, 2007 -Original Revision 1.1 (Apr. 20, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Sep. 10, 2007) - Add -7.5 spec Elite Semiconductor Memory Technology Inc. Publication Date: Sep. 2007
|
Original
|
PDF
|
M52S64164A
|
M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
|
Original
|
PDF
|
256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
|