BAS716
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs
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M3D319
BAS716
OD523
SC-79)
BAS716
R76/01/pp8
771-BAS716-T/R
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BAP70-03
Abstract: DIODE SMD A9 diode MARKING A9
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP70-03 Silicon PIN diode Preliminary specification 2002 Jun 26 Philips Semiconductors Preliminary specification Silicon PIN diode BAP70-03 PINNING FEATURES • High voltage, current controlled RF resistor for attanuators
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M3D319
BAP70-03
MAM406
OD323
OD323)
SCA73
125004/04/pp6
BAP70-03
DIODE SMD A9
diode MARKING A9
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DIODE smd marking 821
Abstract: BB145B CD 7640 BP317 smd marking 3263
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB145B Low-voltage variable capacitance diode Product specification 1999 Dec 15 Philips Semiconductors Product specification FEATURES DESCRIPTION • Ultra small plastic SMD package The BB145B is a planar technology
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M3D319
BB145B
BB145B
OD523
SC-79)
MBK441
125004/01/pp8
DIODE smd marking 821
CD 7640
BP317
smd marking 3263
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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diode SMD MARKING CODE K6 02
Abstract: diode SMD MARKING CODE K6 06 diode SMD MARKING CODE K6 07 diode SMD MARKING CODE K6 03
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP65-02 Silicon PIN diode Product specification Supersedes data of 2001 May 07 2001 May 11 Philips Semiconductors Product specification Silicon PIN diode BAP65-02 FEATURES PINNING • High voltage, current controlled
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M3D319
BAP65-02
MAM405
613512/03/pp8
diode SMD MARKING CODE K6 02
diode SMD MARKING CODE K6 06
diode SMD MARKING CODE K6 07
diode SMD MARKING CODE K6 03
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smd diode code g3
Abstract: 1PS79SB31
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB31 Schottky barrier diode Product specification 2002 Jan 11 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB31 FEATURES • Very low forward voltage • Guard ring protected • Ultra small SMD package.
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M3D319
1PS79SB31
MAM403
OD523
SC-79)
SCA74
613514/01/pp8
smd diode code g3
1PS79SB31
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BAP64-02
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Product specification Supersedes data of 1999 Sep 21 2000 Mar 23 Philips Semiconductors Product specification Silicon PIN diode BAP64-02 FEATURES PINNING • High voltage, current controlled
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M3D319
BAP64-02
MAM405
OD523
603504/05/pp8
BAP64-02
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB30 Schottky barrier diode Product specification 2001 Feb 20 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB30 FEATURES PINNING • Very low forward voltage PIN • Very low reverse current
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M3D319
1PS79SB30
MGU325
SC-79
OD523)
613514/01/pp8
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BB182B
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB182B VHF variable capacitance diode Preliminary specification 1999 Sep 15 Philips Semiconductors Preliminary specification FEATURES DESCRIPTION • High linearity • Low series resistance. The BB182B is a planar technology
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M3D319
BB182B
BB182B
OD523
SC-79)
125004/01/pp8
BP317
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BB141
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB141 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB141 PINNING FEATURES • Excellent linearity
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M3D319
BB141
MBL026
BB141
125004/00/01/pp8
BP317
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st smd diode marking code
Abstract: BB181 marking code 4 SC-79
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB181 VHF variable capacitance diode Product specification 1998 Nov 26 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity The BB181 is a variable capacitance diode, fabricated in planar technology
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M3D319
BB181
BB181
OD523
SC-79)
MBK441
SCA60
115104/00/01/pp8
st smd diode marking code
marking code 4 SC-79
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB182B VHF variable capacitance diode Product specification Supersedes data of 1999 Sep 15 1999 Nov 26 Philips Semiconductors Product specification FEATURES DESCRIPTION • High linearity • Low series resistance.
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M3D319
BB182B
BB182B
OD523
SC-79)
125004/02/pp8
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PMEG2005EB
Abstract: code L5 marking code 4 SC-79
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product specification 2003 Feb 20 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING • Forward current: 0.5 A
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M3D319
PMEG2005EB
MGU328
SCA75
613514/01/pp8
PMEG2005EB
code L5
marking code 4 SC-79
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BAS716
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs
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M3D319
BAS716
MAM408
R76/01/pp8
BAS716
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6 pin smd diode
Abstract: BAP64-02 t 522
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Preliminary specification 1999 Jun 16 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-02 PINNING FEATURES • High voltage, current controlled PIN • RF resistor for RF attenuators and switches
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M3D319
BAP64-02
BAP64-02
OD523
OD523)
MAM405
125004/00/02/pp6
6 pin smd diode
t 522
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BP317
Abstract: BAP64-02 smd diode 6F MCC SMD DIODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP64-02 Silicon PIN diode Objective specification Supersedes data of 1999 Apr 01 1999 May 10 Philips Semiconductors Objective specification Silicon PIN diode BAP64-02 PINNING FEATURES • High voltage, current controlled
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M3D319
BAP64-02
BAP64-02
OD523
OD523)
MAM405
125004/00/02/pp8
BP317
smd diode 6F
MCC SMD DIODE
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st smd diode marking code
Abstract: BB178 st smd diode marking code C smd diode marking dr
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB178 VHF variable capacitance diode Product specification 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity • Very low series resistance. The BB178 is a planar technology
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M3D319
BB178
OD523
SC-79)
BB178
OD523
st smd diode marking code
st smd diode marking code C
smd diode marking dr
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diode 284 c10
Abstract: seoul MAM387
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BZX585 series Voltage regulator diodes Preliminary specification 2000 May 04 Philips Semiconductors Preliminary specification Voltage regulator diodes BZX585 series PINNING FEATURES • Total power dissipation: max. 300 mW
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M3D319
BZX585
OD523
BZX585-B)
BZX585-C)
diode 284 c10
seoul
MAM387
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BB182
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB182 VHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • High linearity • Low series resistance.
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M3D319
BB182
BB182
OD523
SC-79)
SCA55
117027/1200/01/pp8
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BB179
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB179 UHF variable capacitance diode Product specification File under Discrete Semiconductors, SC01 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity • Low series resistance.
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M3D319
BB179
BB179
OD523
SC-79)
SCA55
117027/1200/01/pp8
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PMEG2005EB
Abstract: code L5 smd marking l5
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 Feb 20 2003 Apr 04 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING • Forward current: 0.5 A
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M3D319
PMEG2005EB
MAM403
613514/02/pp7
PMEG2005EB
code L5
smd marking l5
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MARKING C SOD523
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB179 UHF variable capacitance diode Product specification 1997 Nov 13 Philips Semiconductors Product specification FEATURES DESCRIPTION • Excellent linearity • Low series resistance. The BB179 is a planar technology
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M3D319
BB179
BB179
OD523
SC-79)
SCA55
117027/1200/01/pp8
MARKING C SOD523
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MHC188
Abstract: MHC189 smd diode code b1 PMEG3002AEB marking code 4 SC-79 mhc-189
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product specification 2002 May 06 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG3002AEB PINNING • Forward current: 0.2 A
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M3D319
PMEG3002AEB
MGU328
SCA74
613514/01/pp8
MHC188
MHC189
smd diode code b1
PMEG3002AEB
marking code 4 SC-79
mhc-189
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BB143
Abstract: BP317 marking code l
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB143 Low-voltage variable capacitance diode Preliminary specification 1999 May 12 Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode BB143 PINNING FEATURES • Excellent linearity
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M3D319
BB143
MBL026
BB143
125004/00/01/pp8
BP317
marking code l
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