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    M30 THERMAL CUTOFF Search Results

    M30 THERMAL CUTOFF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    M30 THERMAL CUTOFF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 2U 20 diode

    Abstract: marking 2U diode MMBTA64LT1 M30 THERMAL CUTOFF marking symbol 2u MMBTA63 MMBTA63LT1 MMBTA64
    Text: LESHAN RADIO COMPANY, LTD. Darlington Transistors PNP Silicon MMBTA63LT1 MMBTA64LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CES –30 Vdc Collector–Base Voltage


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    PDF MMBTA63LT1 MMBTA64LT1 236AB) marking 2U 20 diode marking 2U diode MMBTA64LT1 M30 THERMAL CUTOFF marking symbol 2u MMBTA63 MMBTA63LT1 MMBTA64

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    Abstract: No abstract text available
    Text: Darlington Transistors PNP Silicon MMBTA63LT1 MMBTA64LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CES –30 Vdc Collector–Base Voltage V CBO –30


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    PDF MMBTA63LT1 MMBTA64LT1 236AB)

    2SJ449

    Abstract: m30 tf 125 transistor 2sj449 M30 THERMAL CUTOFF IEI-1213 MEI-1202 MF-1134
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ449 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ449 is P-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS signed for high voltage switching applications. in millimeters 4.5 ±0.2


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    PDF 2SJ449 2SJ449 m30 tf 125 transistor 2sj449 M30 THERMAL CUTOFF IEI-1213 MEI-1202 MF-1134

    2SJ449

    Abstract: IEI-1213 MEI-1202 MF-1134
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Thyristor mw 134

    Abstract: 562 NOISE SUPPRESSOR CHN6 M33 thermal fuse thyristor control ic with current sense Ceramic Capacitors 104 m30 40 watt telephone ring generator circuit ast 3b block diagram for RF transmitter AND RECEIVER circuit diagram of surge protector for AC mains
    Text: Am79212/Am79C202 Advanced Subscriber Line Interface Circuit ASLIC Device Advanced Subscriber Line Audio-Processing Circuit (ASLAC™) Device Technical Reference TABLE OF CONTENTS Linecard Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4


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    PDF Am79212/Am79C202 0x8000; Thyristor mw 134 562 NOISE SUPPRESSOR CHN6 M33 thermal fuse thyristor control ic with current sense Ceramic Capacitors 104 m30 40 watt telephone ring generator circuit ast 3b block diagram for RF transmitter AND RECEIVER circuit diagram of surge protector for AC mains

    C11892E

    Abstract: 2SJ495 TEA-1035 A3856 m30 tf 125
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ495 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channel MOS Field Effect Transistor in millimeter designed for high current switching applications. 10.0 ± 0.3


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    PDF 2SJ495 C11892E 2SJ495 TEA-1035 A3856 m30 tf 125

    dc m7

    Abstract: PA2211T1M
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2211T1M P-CHANNEL MOS FET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2211T1M is P-channel MOS Field Effect Transistor designed 2.9±0.1 for power management applications of portable equipments, such as


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    PDF PA2211T1M PA2211T1M PA2211T1M-T2-AT dc m7

    40 watt telephone ring generator circuit

    Abstract: thyristor firing circuit thyristor phase control 640-1 relay RSN 314 H 41 12 Volt DPDT Relay electronic firing circuit for ac power controller PS 223 supervision HPF 505 THERMAL fuse M33
    Text: Am79213/Am79C203/031 Advanced Subscriber Line Interface Circuit ASLIC Device Advanced Subscriber Line Audio-Processing Circuit (ASLAC™) Device Technical Reference TABLE OF CONTENTS Linecard Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    PDF Am79213/Am79C203/031 255-n, 40 watt telephone ring generator circuit thyristor firing circuit thyristor phase control 640-1 relay RSN 314 H 41 12 Volt DPDT Relay electronic firing circuit for ac power controller PS 223 supervision HPF 505 THERMAL fuse M33

    2SJ598 equivalent

    Abstract: 2SJ598 2SJ598-Z 2sJ598 transistor M2SJ598
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. PART NUMBER PACKAGE 2SJ598 TO-251 MP-3 2SJ598-Z


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    PDF 2SJ598 2SJ598 O-251 2SJ598-Z O-252 O-251/TO-252 O-251) 2SJ598 equivalent 2SJ598-Z 2sJ598 transistor M2SJ598

    M2SJ598

    Abstract: 2SJ598 equivalent 2sJ598 transistor 2SJ598 2SJ598-Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE 2SJ598 TO-251 MP-3 2SJ598-Z TO-252 (MP-3Z) for solenoid, motor and lamp driver.


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    PDF 2SJ598 2SJ598 O-251 2SJ598-Z O-252 O-251/TO-252 O-251) M2SJ598 2SJ598 equivalent 2sJ598 transistor 2SJ598-Z

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2812T1L P-channel MOSFEF R07DS0762EJ0101 Rev.1.01 May 28, 2013 –30 V, –30 A, 4.8 mΩ Description The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.


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    PDF PA2812T1L R07DS0762EJ0101 PA2812T1L PA2812T1L-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet µPA2812T1L P-channel MOS FIELD EFFECT TRANSISTOR R07DS0762EJ0100 Rev.1.00 May 31, 2012 Description The µPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


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    PDF PA2812T1L R07DS0762EJ0100 PA2812T1L PA2812T1L-E2-AT

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet PA2812T1L P-channel MOS FIELD EFFECT TRANSISTOR R07DS0762EJ0100 Rev.1.00 May 31, 2012 Description The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features


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    PDF PA2812T1L R07DS0762EJ0100 PA2812T1L PA2812T1L-E2-AT

    C11892E

    Abstract: 2SJ495 TEA-1035 D1297
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    allen bradley 8601

    Abstract: g80 n60 allen bradley contactor c60 RS-274-D Lathe spindle report on project of Parking lot system using PLC allen bradley 5572 epson printer m150 SHAFT ENCODER ch 8501 TRANSISTOR SUBSTITUTION
    Text: Allen-Bradley 9/Series CNC Lathe Operation and Programming Manual Important User Information Because of the variety of uses for the products described in this publication, those responsible for the application and use of this control equipment must satisfy themselves that all necessary steps have been taken to assure that


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    PDF UM511A-- allen bradley 8601 g80 n60 allen bradley contactor c60 RS-274-D Lathe spindle report on project of Parking lot system using PLC allen bradley 5572 epson printer m150 SHAFT ENCODER ch 8501 TRANSISTOR SUBSTITUTION

    PA2211T1M

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    2SJ598-Z

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    2SJ598-Z

    Abstract: 2SJ598 2SJ598 equivalent
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    VE880

    Abstract: LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1
    Text: A D V A N C E D C O P Y Le88311/331 Dual Channel Tracking Battery VoicePort™ Device VE880 Series APPLICATIONS „ „ „ „ „ ORDERING INFORMATION Voice enabled Cable and DSL Modems Voice over IP/ATM - Integrated Access Devices IAD Residential VoIP Gateways and Routers


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    PDF Le88311/331 VE880 Le88311/331 LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1

    omron relay G2R-2 8 pin 12V DC

    Abstract: Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G
    Text: ND3% BASE1 XXXX5998-1631-1-P 1631 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 08:29 TS:TS date TS time RELAYS, SOLENOIDS & CONTACTORS Go Online for Product Availability AUTOMOTIVE RELAYS DG34 SERIES AUTOMOTIVE INDUSTRIAL POWER RELAYS 60-80A AUTOMOTIVE RELAYS CONT.


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    PDF 277VAC, 30VDC 10VAC/DC 250VAC 10million 0-80A DG34-1021-36-1012-F 59PIARQ S18UUA S18UUAQ omron relay G2R-2 8 pin 12V DC Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G

    subwoofer 1000 watts amplifier

    Abstract: 50 watt subwoofer circuit diagram 500 watt audio subwoofer high subwoofer 100 watts amplifier NJU26902 passive subwoofer crossover 100 watt subwoofer circuit diagram passive CROSSOVER circuit diagram sub woofer passive subwoofer circuit diagram 12 volts 50 watt subwoofer circuit diagram
    Text: CS4525 30 W Digital Audio Amplifier with Integrated ADC Digital Amplifier Features ADC Features  Fully Integrated Power MOSFETs  Stereo, 24-bit, 48 kHz Conversion  No Heatsink Required  Multi-bit Architecture – –  95 dB Dynamic Range A-wtd


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    PDF CS4525 24-bit, DS726PP3 subwoofer 1000 watts amplifier 50 watt subwoofer circuit diagram 500 watt audio subwoofer high subwoofer 100 watts amplifier NJU26902 passive subwoofer crossover 100 watt subwoofer circuit diagram passive CROSSOVER circuit diagram sub woofer passive subwoofer circuit diagram 12 volts 50 watt subwoofer circuit diagram

    rsn 3404

    Abstract: cf -mh 22 e 103 m-c texas instruments data guide manual HIGH VOLTAGE ISOLATION DZ 2101 PEAK DETECTOR CIRC Transistor AND DIODE Equivalent list Scans-049 RRUS 32 b2 specs TIL Display transistor 381 7943 363AM
    Text: a Telecommunication Products Data Book 1992/1993 Advanced Micro Devices Telecommunication Products Data Book 1 9 9 2 /1 9 9 3 D V A N C E D M I C R O D E V I C E S Î 1 1992 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products


    OCR Scan
    PDF is110 CD028 PL028 06751F PL032 CD040 rsn 3404 cf -mh 22 e 103 m-c texas instruments data guide manual HIGH VOLTAGE ISOLATION DZ 2101 PEAK DETECTOR CIRC Transistor AND DIODE Equivalent list Scans-049 RRUS 32 b2 specs TIL Display transistor 381 7943 363AM