M3 11A ABS Search Results

EX-23-PN

Abstract: EX109 L040 CX-30 FX-11A FX-13 EX-26A ex20 wiring diagram EX-22A-PN
Contextual Info: SERIES Amplifier Built-in Ultra-compact Photoelectric Sensor FX-D1/A1/M1 PHOTOELECTRIC SENSORS EX-20 FX-13 FX-11A Fiber Sensors Miniature-sized and Still Mountable with M3 Screws EX-10 CX-30 CX-RVM5/D100/ND300R Amplifier Built-in Type CX-20 FZ-10 Marked Conforming to EMC Directive

Contextual Info: NTE2373 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A

NTE2921

Contextual Info: NTE2921 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID

NTE2371

Contextual Info: NTE2371 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P–Channel D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID

NTE2374

Contextual Info: NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A

NTE2905

Abstract: NTE290 MOSFET p-CH
Contextual Info: NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P−Channel D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings:

1RF9640

Abstract: IRF9640 9422B 422B
Contextual Info: PD-9.422B International S Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -200V ^DS on = 0-50É2 lD = -1 1 A Description

ELECTROLYTIC CAPACITORS 220uF 25V

Abstract: TR-332 TDK 2822 M tdk mtbf
Contextual Info: Data Sheet: Asceta iQL Series –Single Output Quarter Brick TM Asceta iQL Series DC/DC Power Modules 48V Input, 28V / 11A /308W Output Quarter Brick The Asceta™ power module series provides exceptionally high true useable power in an industry standard quarter brick format. With

ELECTROLYTIC CAPACITORS 220uF 25V

Abstract: TR-332 200W 6.8 ohm k ceramic resistor tdk mtbf
Contextual Info: Data Sheet: Asceta iQL Series –Single Output Quarter Brick TM Asceta iQL Series DC/DC Power Modules 48V Input, 28V / 11A /308W Output Quarter Brick The Asceta™ power module series provides exceptionally high true useable power in an industry standard quarter brick format. With

Contextual Info: SSFP11N50 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 500V Simple Drive Requirement ID25 = 11A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

035H

Abstract: IRFPE30
Contextual Info: PD- 95666 SMPS MOSFET IRFPC50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

IRFB11N50A

Abstract: IRFI840G
Contextual Info: PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement

irfp9140npbf

Abstract: IRF9540N
Contextual Info: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier

transistor IRF 610

Abstract: transistor irf 647 TO-220aB 11A TO-220aB DIODE 11A
Contextual Info: PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

transistor c257

Contextual Info: P D -9.1026 International lüRectifier IRGPF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

transistor c246

Abstract: transistor c243 C246 C243 transistor IRGBF30F
Contextual Info: International l« i Rectifier PD - 9.773 IRGBF30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

transistor c246

Abstract: transistor c245 c245 transistor
Contextual Info: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve

IRFB11N50A

Abstract: IRFIB7N50A
Contextual Info: PD - 91810 IRFIB7N50A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS‡ Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRFPC50LC

Abstract: IRFPE30
Contextual Info: PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 600V RDS on = 0.60 Ω

IRLZ24N

Abstract: IRF1010 E DATASHEET 668 8e IRF1010 irf1010 MOSFET
Contextual Info: PD - 91357C IRLZ24N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.06Ω G ID = 18A S Description Fifth Generation HEXFETs from International Rectifier

69mH

Contextual Info: SSFP11N40 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 400V Simple Drive Requirement ID25 = 11A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

RLZ24N

Contextual Info: PD - 9.1344B International I R Rectifier IRLIZ24N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRM S © Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Voss = 55V RoS on = 0 . 06Q .

Contextual Info: PD - 9.1357A International IOR Rectifier IRLZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175°C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 5 5 V

ISD14A

Abstract: SSFP15N25
Contextual Info: SSFP15N25 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 250V Simple Drive Requirement ID25 = 15A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability