M2P DIODE Search Results

M2P diode

Abstract: smd 5736 led white smd zener color codes m2p zener catalogue automatic lamp incandescent impedance relay 24v omron smd top led lamps ST9141A1002 transistor smd 24c
Contextual Info: Indicator Rectangular M2P Large Rectangular-bodied Indicators • Excellent illumination with even surface brightness. ■ Three-color models (green, orange, red; chameleon lighting) included in lineup. Be sure to read Safety Precautions for All Pushbutton

Contextual Info: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high

Philips MARKING CODE

Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked

marking M2P diode

Abstract: M2P diode diode m2r M2R DIODE MA741WK
Contextual Info: MA111 Schottky Barrier Diodes SBD MA741WA, MA741WK Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 Two elements are incorporated in MA741 (S-Mini type 3 pins) ● Low forward rise voltage VF and satisfactory wave detection efficiency

Diode Marking WA

Abstract: M2P diode M2R DIODE MA704WA
Contextual Info: MA111 Schottky Barrier Diodes SBD MA704WA, MA704WK Silicon epitaxial planer type Unit : mm +0.2 For switching For wave detection circuit 2.8 –0.3 +0.25 1.5 –0.05 Low forward rise voltage VF and satisfactory wave detection effi- 1.45 3 +0.1 ● 1 0.4 –0.05

Contextual Info: Schottky Barrier Diodes SBD MA3X704D, MA3X704E (MA704WA, MA704WK) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage IFM 150 mA Single Double *

marking m2p

Contextual Info: Schottky Barrier Diodes SBD MA3J741D, MA3J741E (MA741WA, MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η

M2P diode

Abstract: Double high-speed switching diode MA3S781D
Contextual Info: Schottky Barrier Diodes SBD MA3S781D Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features VR 30 V Peak reverse voltage VRM 30 V Single 0.12 − 0.02 Reverse voltage (DC) + 0.05 0.28 ± 0.05 Unit + 0.05 Rating

M2P diode

Abstract: marking m2p M2R DIODE MINI 3PIN MA3X704D MA3X704E
Contextual Info: Schottky Barrier Diodes SBD MA3X704D, MA3X704E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V Peak forward current Single IFM 150 mA Forward current (DC) Single + 0.1 0.16 − 0.06

MA3J741D

Abstract: MA3J741E A1033 M2P diode
Contextual Info: Schottky Barrier Diodes SBD MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 • Two MA3J741s are contained in one package (S-mini type 3-pin) • Low forward rise voltage (VF) and satisfactory wave detection

Contextual Info: Schottky Barrier Diodes SBD MA3S781D, MA3S781E (MA781WA, MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package

MA3X704A

Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK
Contextual Info: Schottky Barrier Diodes SBD MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 1.1+0.2 –0.1 0 to 0.1 Symbol Rating

MA3J741EG

Abstract: MA3J7410G MA3J741DG
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name MA3J741DG 1: Cathode 1 2: Cathode 2

MA3J741

Abstract: MA3J741D MA3J741E MA741 MA741WA MA741WK ir 0425
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 5˚

MA3X704D

Abstract: MA3X704E MA704WA MA704WK panasonic ma diodes sc-59 Marking marking m2p panasonic "rs 466"
Contextual Info: Schottky Barrier Diodes SBD MA3X704D , MA3X704E (MA704WA,MA704WK) Silicon epitaxial planar type + 0.25 Parameter Symbol Rating Unit Reverse voltage (DC) MA3X704D/E VR 30 V IFM 150 mA Forward current (DC) Single 30 Junction temperature Tj 125 °C Storage temperature

ma741

Abstract: marking m2p MA3J741 MA3J741D MA3J741E MA741WA MA741WK
Contextual Info: Schottky Barrier Diodes SBD MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package

MA3S781

Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
Contextual Info: Schottky Barrier Diodes SBD MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 (0.44) 1 2 3˚ (0.80)

MA3S781

Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1