M29F Search Results

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical

M29F800D

Abstract: M29F800DB M29F800DT
Contextual Info: M29F800DT M29F800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for Program, Erase and Read ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29F200BT M29F200BB 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 7 MEMORY BLOCKS

555 NC timer

Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory • SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs per Byte/Word typical ■ 44 5 MEMORY BLOCKS

M29F016D

Contextual Info: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

Contextual Info: SGS-THOMSON M29F105B HIÊ ô [l[LI(gTÎ^ R!lD(êi 1 Mb (x16, Block Erase) SINGLE SUPPLY FLASH MEMORY PRELIMINARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: M29F102BB 1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 35ns ■ FAST PROGRAMMING TIME: 8^s typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

Contextual Info: SGS-THOMSON raDwunnteinMiiiiiDei M29F040 4 Mb 512K x 8, Block Erase SINGLE SUPPLY FLASH MEMORY • 5 V ± 10% SUPPLY VOLTAGE for PROGRAM/ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns ■ BYTE PROGRAMMING TIME: 10^s typical ■ ERASE TIME - Block: 1.0 sec typical

Contextual Info: M29F080A 8 Mbit 1 Mb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME - 8 jas by Byte typical ■ 16 UNIFORM 64 Kbyte MEMORY BLOCKS

Contextual Info: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei M29F200T M29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

A/M29F040B(45/55/70/GR-468

Contextual Info: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory PR E LIM IN A R Y DATA • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8 jas per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

Contextual Info: M29F100T M29F100B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

Contextual Info: M29F100BT M29F100BB 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V+10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8|is per Byte/Word typical ■ 5 MEMORY BLOCKS

Contextual Info: M29F105B 1 Mbit 512Kb x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 55ns ■ FAST PROGRAMMING TIME: 10|os typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word

M29F400

Abstract: M29F400B M29F400T
Contextual Info: M29F400T M29F400B 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte or Word-by-Word

tsop48

Abstract: M29F160BB M29F160BT reel tsop48
Contextual Info: M29F160BT M29F160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte/Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F105B

Abstract: A12-A15
Contextual Info: M29F105B 1 Mbit 64Kb x16, Block Erase Single Supply Flash Memory 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word – Status Register bits

M29F016B

Abstract: M29F016
Contextual Info: M29F016B 16 Mbit 2Mb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

Device M29F010B

Abstract: M29F010B PDIP32 PLCC32 TSOP32
Contextual Info: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory DATA BRIEFING SUPPLY VOLTAGE – 5V ± 10% Supply Voltage for Program, Erase and Read operations FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 10µs typical PROGRAMERASE CONTROLLER (P/E.C.)

00D3H

Abstract: M29F200 M29F200B M29F200T
Contextual Info: M29F200T M29F200B 2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F105B

Abstract: 0087H
Contextual Info: M29F105B 1 Mbit 64Kb x16, Block Erase Single Supply Flash Memory DATA BRIEFING 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Word-by-Word

JESD97

Abstract: M29F400 M29F400B M29F400BB M29F400BT K 1603 24v
Contextual Info: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Features • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical ■ 11 memory blocks

M29F100T

Abstract: M29F100 M29F100B
Contextual Info: M29F100T M29F100B 1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29F002BB

Abstract: M29F002BNT M29F002BT PDIP32 PLCC32 TSOP32 M29F002NBT
Contextual Info: M29F002BT M29F002BB, M29F002BNT 2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory PRELIMINARY DATA • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME – 8µs by Byte typical ■ 7 MEMORY BLOCKS