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    M2023 SWITCH Search Results

    M2023 SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG301AAA Rochester Electronics DG301AAA - CMOS Analog Switch Visit Rochester Electronics Buy
    ICL7660SMTV Rochester Electronics LLC Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy

    M2023 SWITCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT4156

    Abstract: switch M2044 M2012 6A 125V M2019 HK-2 M2044 M2012 M2032 M2013 M2015
    Text: Miniature Rockers Series M Distinctive Characteristics Three methods of panel mounting: flat frame for flush with face or subpanel, snap-in, and PCB. High insulating barriers increase isolation of circuits in multipole devices and provide added protection to contact points.


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    MARK B83

    Abstract: M2026 M2012 6A 125V
    Text: Slides Rotaries Keylocks Programmable Illuminated PB Pushbuttons Rockers Toggles Series M Miniature Rockers General Specifications B Electrical Capacity Resistive Load Power Level (silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On; 3A @ 30V DC for all other circuits


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    PDF M2022TJW01-FC-4A-CF M2012TJW01-FC-3A-CF MARK B83 M2026 M2012 6A 125V

    M2042SS1W01

    Abstract: IEC60529 M2011 M2012 M2013 M2013SS1W01 M2015 M2018
    Text: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggle has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due


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    PDF M2032SS1W01 M2042SS1W01 M2042SS1W01 IEC60529 M2011 M2012 M2013 M2013SS1W01 M2015 M2018

    IEC529

    Abstract: M2011 M2012 M2013 M2013SS1W01 M2015 M2018 M12-P1 M-2011
    Text: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggles has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due


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    Untitled

    Abstract: No abstract text available
    Text: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggle has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due


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    PDF AT415 AT444 AT434 AT406

    IEC60529

    Abstract: No abstract text available
    Text: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggle has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due


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    PDF M2032S2A2G45 M2042S2A2G45 IEC60529

    M2046

    Abstract: M2013SS1W01 M2033 On-On-On SP3T
    Text: General Specifications Electrical Capacity Resistive Load Power Level (silver): 6A @ 125V AC & 3A @ 250V AC 4A @ 30V DC for On-None-On & On-None-Off; 3A @ 30V DC for all other circuits Logic Level (gold): 0.4VA maximum @ 28V AC/DC maximum (Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V)


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    PDF AT4181 AT507H AT507M AT516 M2046 M2013SS1W01 M2033 On-On-On SP3T

    M2022 L power switch

    Abstract: m2022 toggle switch switch M2044 M2012 6A 125V M2022 LL2 power switch M2042SS1W01 RING LUG M6 IEC60529 M2011 M2012
    Text: Miniature Toggles Series M Distinctive Characteristics Antirotation design, standard on noncylindrical levers, mates toggle and bushing; bottom of toggle has two flatted sides which fit into a complementary opening inside bushing. Antijamming design protects contacts from damage due


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    M2047 toggle switch

    Abstract: LM 7850 M2013 toggle switch m2022 toggle switch E4F 250V 3A M2046 M2019 poly aluminum chloride U2042 M2011
    Text: D IS T IN C T IV E F E A T U R E S Antirotation feature is standard on noncylindrlcal levers Antijamming design on toggle switches protects contacts from damage due to excessive downward force on the actuator. High torque bushing construction prevents rotation or separation from frame


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    PDF 5mmA216" 6mmA063" M2047 toggle switch LM 7850 M2013 toggle switch m2022 toggle switch E4F 250V 3A M2046 M2019 poly aluminum chloride U2042 M2011

    Untitled

    Abstract: No abstract text available
    Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible


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    PDF HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


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    PDF HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)


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    PDF HX6256 1x10erad 1x101 1x109 28-Lead 28-Lead

    HX6856

    Abstract: x-ray cmos HX6856/2
    Text: • I K U Military Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SGI HX6856 FEATURES OTHER RADIATION Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |nm Process • Read/Write Cycle Times < 2 5 ns (-55 to125°C ) Total Dose Hardness through 1x106 rad(S i02)


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    PDF 1x106 1x101 to125 256Kx1 HX6856 36-Lead 28-Lead HX6856 x-ray cmos HX6856/2

    Untitled

    Abstract: No abstract text available
    Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as


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    PDF 1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead