M1B TRANSISTOR Search Results

M1B marking

Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G S-LMBT2222LT1G S-LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site

MMBT2222ALT1G

Abstract: 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1

m1b marking

Abstract: MMBT2222ALT1G 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G
Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCEO MMBT2222LT1

1P marking

Abstract: LMBT2222ALT1G m1b marking LMBT2222LT1G 1N914 f250300
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • We declare that the material of product compliance with RoHS requirements. 3 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage V CEO

MMBT2222LT1G

Abstract: MMBT2222ALT1G m1b marking 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G 1P SOT-23
Contextual Info: MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT2222LT1G

MMBT2222ALT1G

Abstract: MMBT2222LT1G m1b marking 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT3G MMBT2222LT3G on semiconductor marking code 1P
Contextual Info: MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBT2222LT1G

marking code m1b

Abstract: SMMBT2222ALT1G SMMBT2222A MMBT2222LT1-D MMBT2222AL on semiconductor marking code 1P MMBT2222ALT1G
Contextual Info: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

Contextual Info: MMBT2222L, MMBT2222AL, SMMBT2222AL General Purpose Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1G LMBT2222ALT1G NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.6 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR NPN SOT–23 FEATURES  Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: Transistors SMD Type NPN General Purpose Amplifier MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1

Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23

Contextual Info: Photomicrosensor EE-SK3W-B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. • • • 18.8 15.8 0.8 PCB mounting type. With a red LED as an emitter element and a Photo-Darlington transistor as a detector element.

E3HF1E1

Abstract: DS5E through beam sensor circuit diagram Infrared sensors for distance led receiver
Contextual Info: E3HF E3HF Thin-Profile 7-mm Photoelectric Sensor E3HF Thin Flat-pack Style • Just 7 mm 0.276 in thick ■ NPN transistor output switches 80 mA ■ Choose Light-ON or Dark-ON operation models ■ Top and side through holes make mounting easy ■ 3 pairs of focusing slits supplied with

Contextual Info: Thin Profile 7 mm Photoelectric Sensor E3HF Thin Flat-pack Style • ■ ■ ■ ■ Just 7 mm 0.276 in thick NPN transistor output switches 80 mA Choose Light-ON or Dark-ON operation models Top and side through holes make mounting easy 3 pairs of focusing slits supplied with

EE-SJ3W-B

Contextual Info: Photomicrosensor EE-SJ3W-B Transmissive Dimensions Note: Features All units are in millimeters unless otherwise indicated. • • • General-purpose model with a 3-mm-wide slot. PCB mounting type. With a red LED as an emitter element and a Photo-Darlington transistor as a detector element.

E3C-jc4

Abstract: E3C-T1L amplifier in light sensor indicator circuit OMRON e3c jc4 OMRON PHOTOELECTRIC SWITCH AMPLIFIER photo-electric switch RELAY OMRON E3C-JC4P shock sensor amplifier light dark sensor circuit E3C-JB4P
Contextual Info: R Single-Point Optical Through-Beam Sensor E3C-T1 Compact, Narrow-View Sensor Is Ideal for Sensing Wafers — Using OMRON’s Unique “Pin-point” LED H 0.1-ms ultra-high-speed response H Safer and more cost-effective than comparable laser products H Use the E3C-T1 amplifier’s turbo feature

EE-SX2088

Abstract: EE-SX2088-W1
Contextual Info:
EE-SX2088 -W1 New Low-cost Photodarlington Transistor Output
0.5-mA output min. with only 1-mA forward LED current
Mounting tabs to secure EE-SX2088 to PCB
Best suited to drive CMOS IC
EE-SX2088-W1 version provides easy, reliable solder-free connection

EE-SX

Abstract: EE-SX2088 EE-SX2088-W1
Contextual Info:
EE-SX2088 -W1 New Low-cost Photodarlington Transistor Output
0.5-mA output min. with only 1-mA forward LED current
Mounting tabs to secure EE-SX2088 to PCB
Best suited to drive CMOS IC
EE-SX2088-W1 version provides easy, reliable solder-free connection

sy201

Abstract: EE-SY201
Contextual Info:
EE-SY201 Low-cost Reflective Photodarlington Output Requires Low Driving Input
Only 5-mA forward current required by the LED
Best suited to drive CMOS IC
Incorporates an LED emitter and a Photodarlington transistor receiver Ordering Information Appearance

E3JM-DS70M4T-US

Abstract: delay timer circuit diagram E3JM-10M4-US E3JM-DS70R4T-US delay timer e3jmds70m4tu E3JM-R4M4T-US E39-L53 E3JM-10M4 E3JM-DS70M4-US
Contextual Info: Universal Voltage Terminal Photoelectric E3JM Universal AC/DC Photoelectric Sensor with Built-in Timer • Easy-to-wire terminal block ■ Built-in timer offers selectable ON-delay, OFF-delay and one-shot ■ Relay or transistor output models ■ Polarized, through-beam and diffuse