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    M150G Search Results

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    M150G Price and Stock

    Kyocera AVX Components HQCCWM150GAH6A

    CAP CER 15PF 2.5KV P90 2325
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    DigiKey HQCCWM150GAH6A Tray 16 1
    • 1 $20.26
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    Microchip Technology Inc LSM150G-TR13

    DIODE SCHOTTKY 50V 1A DO215AA
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    DigiKey LSM150G-TR13 Reel 3,000
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    Adam Equipment Co Ltd ASTM-1---50G

    ASTM WEIGHTS
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    DigiKey ASTM-1---50G Box 1
    • 1 $116.25
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    Infineon Technologies AG BSM150GD60DLC

    IGBT MOD 600V 180A 570W
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    DigiKey BSM150GD60DLC Tray
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    Kyocera AVX Components SQCAEM150GAJWE

    CAP CER 15PF 150V 0505
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    M150G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MBM150GR12A

    Abstract: Hitachi DSA0047
    Text: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDE-M150GR12A-0 MBM150GR12A 50A/1200V, Weight230g MBM150GR12A Hitachi DSA0047 PDF

    MBM150GR12A

    Abstract: mbm150gr12 igbt 1200v 150a
    Text: PDJ-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M150GR12A [定格 150A/1200V, 2in1 パッケージタイプ] 特長 外形寸法図 • 低飽和電圧特性高速スイッチング • 低ターンオフスイッチング損失 • 高速ソフトリカバリダイオード USFD 採用


    Original     		PDJ-M150GR12A-0 MBM150GR12A 50A/1200V, TC125 MBM150GR12A mbm150gr12 igbt 1200v 150a PDF

    mbm150gr12

    Abstract: MBM150GR12A MBM150
    Text: PDE-M150GR12A-0 Hitachi IGBT Module / Silicon N-Channel IGBT M150GR12A [Rated 150A/1200V, Dual-pack type] OUTLINE DRAWING • Low saturation voltage and high speed. • Low turn-OFF switching loss. • Low noise due to built-in free-wheeling diode. Ultra Soft and Fast recovery Diode (USFD


    Original     		PDE-M150GR12A-0 MBM150GR12A 50A/1200V, Weight230g mbm150gr12 MBM150GR12A MBM150 PDF

    ac drives ls 600

    Abstract: *semibox M150G
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/65 °C Tcase = 25/65 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 190 / 150


    Original     		PDF

    150GB

    Abstract: GB063D
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 200 / 150


    Original     		PDF

    uc1025

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Units RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 200 / 150


    Original     		PDF

    zvs zcs induction heating igbt

    Abstract: semikron SKm 123D semikron SKm 50 GB 123D 123d transistor high frequency welder circuit diagram LB 124D skm 200 123d transistor SKM 75 GB 123D 124d transistor 123D
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 150 / 100 4)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cG R lc IcM = 20 T oase = 25 /80 °C R ge T oase = 25 /80 °C; tp = 1 ms V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate V V A A V W °C V 1200 1200


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: s e M IK R O n Absolute Maximum Ratings Values Symbol Conditions 1 Units 1200 V cG R R ge = 20 lc Tease = 2 5 / 6 5 °C 190 / 150 IcM Tease = 2 5 / 6 5 °C ; tp = 1 ms 380 / 300 ±20 V ges Ptot pe r IG B T , T oase = 2 5 °C 800 - 4 0 . + 1 5 0 1 2 5 )


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Ptot Tj, Tstg Visol humidity climate Units Rge = 20 Toase = 25/70 °C Tease = 25/70 °C; tp = 1 ms per IGBT, T oase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68T.1


    OCR Scan     		PDF

    GAY17

    Abstract: C8050 10C1 c21027 M1s0 NPT-IGBT SKM GAY1
    Text: back I ¡Hi 5EMIKR0N zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units Ptot Tj, T s,g) per IGBT/Diode, T caSe = 25 °C Vsol AC, 1 min. DIN 40 040 DIN IEC 68 T.1 humidity climate 1700 1700 1 1 0 /7 5 2 2 0 /1 5 0 ±20


    OCR Scan     		150qb720 m150qb17 GAY17 C8050 10C1 c21027 M1s0 NPT-IGBT SKM GAY1 PDF