M11443EJ3V0AN00 Search Results

PD70236

Abstract: uPD70236
Contextual Info: DRAM-CPU CONNECTION METHODS 1994, 1996 Document No. M11443EJ3V0AN00 3rd edition (Previous No. IEA-1302) Date Published August 1996 P Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

ry 130-2

Contextual Info: APPLICA TION NOTE \ NEC DRAM-CPU CONNECTION METHODS \ \ NEC Corporation 1994, 1996 \ \ Document No. M11443EJ3V0AN00 3rd edition (Previous No. IEA-1302) Date Published August 1996 P Printed in Japan 1215 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

Contextual Info: APPLICA TION NOTE NEC DRAM-CPU CONNECTION METHODS I NEC Corporation 1 9 9 4 ,1 9 9 6 Document No. M11443EJ3V0AN00 3rd edition (Previous No. IEA-1302) Date Published August 1996 P Printed in Japan The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.