M11 MARKING TRANSISTOR Search Results

M11 MARKING TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

M11 MARKING TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
M11 marking transistor Abstract: DMN100-7-F DMN100 Text: SPICE MODELS: DMN100 DMN100 Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · SC-59 Extremely Low On-Resistance: 170mW @ VGS = 4.5V A High Drain Current: 1.1A D Ideal for Notebook Computer, Portable Phone, PCMCIA	Original	PDF	DMN100 SC-59 170mW AEC-Q101 DS30049 M11 marking transistor DMN100-7-F DMN100
M11 marking transistor Abstract: DMN100 DMN100-7-F Text: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA	Original	PDF	DMN100 AEC-Q101 SC-59 J-STD-020C MIL-STD-202, DS30049 M11 marking transistor DMN100 DMN100-7-F
marking code 54 Abstract: DMN100 DMN100-7-F Text: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits	Original	PDF	DMN100 AEC-Q101 SC-59 J-STD-020C MIL-STD-202, DS30049 marking code 54 DMN100 DMN100-7-F
Untitled Abstract: No abstract text available Text: General Purpose Transistors NPN Silicon BCW65ALT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage	Original	PDF	BCW65ALT1 236AB) 20mAdc,
BCW65ALT1 Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon BCW65ALT1 3 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 32 Vdc Collector–Base Voltage V CBO 60 Vdc Emitter–Base Voltage V EBO	Original	PDF	BCW65ALT1 236AB) 20mAdc, BCW65ALT1
M11 marking Abstract: No abstract text available Text: DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Extremely Low On-Resistance: 170mΩ @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits	Original	PDF	DMN100 AEC-Q101 SC-59 SC-59 J-STD-020C MIL-STD-202, DS30049 M11 marking
PG-SOT-23 Abstract: TLE4961-1M Text: TLE4961-1M High Precision Automotive Hall Effect Latch Technical Product Description Rev. 1.1, 2012-04-12 Sense & Control Edition 2012-04-12 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer	Original	PDF	TLE4961-1M PG-SOT23 PG-SC59-3-5 PG-SOT23 PG-SOT-23 TLE4961-1M
ICE65L04F Abstract: ICE65L01F d flip flop 7475 sublvds lvds d flip flop 7475 circuit diagram ice65l04 ICE65 442-665 ICE65L04F-L 48948 Text: iCE65 Ultra Low-Power mobileFPGA™ Family March 30, 2012 2.42 Data Sheet  First high-density, ultra low-power Figure 1: iCE65 Family Architectural Features single-chip, SRAM mobileFPGA family specifically designed for hand-held applications and long battery life	Original	PDF	iCE65TM 30-MAR-2011) iCE65 30-MAR-2012) ICE65L04F ICE65L01F d flip flop 7475 sublvds lvds d flip flop 7475 circuit diagram ice65l04 442-665 ICE65L04F-L 48948
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PDF	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
mip411 Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291 Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PDF	PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
DS600 Abstract: XA95144XL AEC-Q100 XA9500XL XAPP114 XAPP427 XC9500XL Xa9500 2N6210 Text: XA95144XL Automotive CPLD DS600 v1.1 April 3, 2007 Features • • • • • • • • • • • • AEC-Q100 device qualification and full PPAP support available in I-grade. Guaranteed to meet full electrical specifications over TA = -40° C to +85° C (I-grade)	Original	PDF	XA95144XL DS600 AEC-Q100 144-CSP XC9500XL XAPP111, XAPP784, DS600 XA9500XL XAPP114 XAPP427 Xa9500 2N6210
Untitled Abstract: No abstract text available Text: XA95144XL Automotive CPLD R DS600 v1.0 January 12, 2007 Product Specification Features Power Estimation • Power dissipation in CPLDs can vary substantially depending on the system frequency, design application and output loading. Each macrocell in an XA9500XL automotive device	Original	PDF	XA95144XL DS600 XA9500XL XC9500XL XAPP111, XAPP784,
2SC 8550 Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545 Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4	Original	PDF	3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
SMD Resistors, Arrays and Networks Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents	Original	PDF	vse-db0010-0611 SMD Resistors, Arrays and Networks STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors

SMD MARKING code 613 sot23 Abstract: No abstract text available Text: TLE4961-1M High Precision Automotive Hall Effect Latch Data Sheet Revision 1.0, 2012-07-20 Sense & Control Edition 2012-07-20 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer	Original	PDF	TLE4961-1M TLE4961-1M SMD MARKING code 613 sot23
1002ds Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2	Original	PDF	2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Untitled Abstract: No abstract text available Text: LH7A400 32-Bit System-on-Chip Data Sheet FEATURES • Three Programmable Timers • 32-bit ARM9TDMI RISC Core – 16KB Cache: 8KB Instruction and 8KB Data – MMU Windows CE™ Enabled – Up to 250 MHz; see Table 1 for options • Three UARTs – Classic IrDA (115 kbit/s)	Original	PDF	LH7A400 32-bit SMA01012
XA2C128-8CPG132Q Abstract: No abstract text available Text: XA2C128 CoolRunner-II Automotive CPLD R DS554 v1.0 October 31, 2006 Features • • • • • • AEC-Q100 device qualification and full PPAP support available in both I-grade and extended temperature Q-grade Guaranteed to meet full electrical specifications over	Original	PDF	XA2C128 DS554 AEC-Q100 100-pin XAPP784: XAPP375: XAPP376: XAPP378: XAPP382: XAPP389: XA2C128-8CPG132Q
Untitled Abstract: No abstract text available Text: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device	Original	PDF	TPS60151 SLVSA02 TPS60151 V/140mA 140mA
Untitled Abstract: No abstract text available Text: TPS60151 www.ti.com . SLVSA02 – SEPTEMBER 2009 TPS60151 5V/140mA Charge Pump Device	Original	PDF	TPS60151 SLVSA02 TPS60151 V/140mA 140mA
recommended layout CSG324 Abstract: CSG324 SPARTAN 6 UG385 spartan 6 LX150 XC6SLX4 2 CSG225 I XC6SLX4 CSG225 UG385 LX150 AB p89 LX100T Text: Spartan-6 FPGA Packaging and Pinouts Advance [optional]Product Specification UG385 v1.0 June 24, 2009 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development	Original	PDF	UG385 Docu2009 recommended layout CSG324 CSG324 SPARTAN 6 UG385 spartan 6 LX150 XC6SLX4 2 CSG225 I XC6SLX4 CSG225 UG385 LX150 AB p89 LX100T
vhdl code of floating point adder Abstract: 11F32 AEC-Q100 LVCMOS15 LVCMOS25 LVCMOS33 XA2C128 XAPP427 XAPP399 Text: XA2C128 CoolRunner-II Automotive CPLD R DS554 v1.1 May 5, 2007 Features • AEC-Q100 device qualification and full PPAP support available in both I-grade and extended temperature Q-grade • Guaranteed to meet full electrical specifications over TA = -40° C to +105° C with TJ Maximum = +125° C	Original	PDF	XA2C128 DS554 AEC-Q100 100-pin 132-ball XAPP399: vhdl code of floating point adder 11F32 LVCMOS15 LVCMOS25 LVCMOS33 XAPP427 XAPP399
marking CF Abstract: No abstract text available Text: Ordering number: EN 1780A i 2SC3650 No.l780A NPN Epitaxial Planar Silicon Transistor SAMYO High hpE> Low-Frequency General-Purpose Amp Applications i Applications . LF amp, various drivers, muting circuit Features . High DC current gain hpE=800 to 3200 . Low collector-to-emitter saturation voltage [VcE(sat)“0* ^	OCR Scan	PDF	l780A 2SC3650 marking CF
3SK184 Abstract: 3SK192 3sk220 3SK139 h024 3sk200 3sk169 GN1043 4 pin hall 3SK14 Text: —5/ Mini Type 4-pin Package • Outline U n it I mm Diodes 2 -8 ‘ o 3 0 .6 5 t Q 1 5, a w rn 15 — ,0 .6 5 t 0 . 1 5 m - 5 -8 1 (4 • > '« . A, it it i* á 7 ^ r- y T \ r „ iS h £ £ ¥ CM CM <> ‘ o \|o o l ÒK t t S t ? n £ ' M J CD 7 ^ M 'U - v - y 7 \	OCR Scan	PDF	OH004, 3SK184 3SK192 3sk220 3SK139 h024 3sk200 3sk169 GN1043 4 pin hall 3SK14

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M11 MARKING TRANSISTOR Search Results

M11 MARKING TRANSISTOR Result Highlights (5)

M11 MARKING TRANSISTOR Datasheets Context Search

M11 marking transistor

M11 marking transistor

marking code 54

Untitled

BCW65ALT1

M11 marking

PG-SOT-23

ICE65L04F

MIP2F3

mip411

DS600

Untitled

2SC 8550

SMD Resistors, Arrays and Networks

SMD MARKING code 613 sot23

1002ds

Untitled

XA2C128-8CPG132Q

Untitled

Untitled

recommended layout CSG324

vhdl code of floating point adder

marking CF

3SK184