KMA2D8P20X
Abstract: Marking 52 tsop 6 marking A1 6
Text: SEMICONDUCTOR KMA2D8P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M05 1 01 2 3 No. Item Marking Description Device Mark M05 KMA2D8P20X * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1
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KMA2D8P20X
KMA2D8P20X
Marking 52 tsop 6
marking A1 6
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Untitled
Abstract: No abstract text available
Text: Accessories CAG-CLG Insulator for crimp contacts male / white marking Contact configuration M02 M03 M04 M05 M06 M07 M08 M10 M12 M16 M19 CAG CAG-CLG Crimp contacts, kit with the number of contacts in a tube female / red marking Insulator part number Male contact
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nesg2101m05-t1-a
Abstract: NESG2101M05-A
Text: A Business Partner of Renesas Electronics Corporation. NESG2101M05 Data Sheet NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • • • •
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NESG2101M05
R09DS0036EJ0300
NESG2101M05
PU10190EJ02V0DS
nesg2101m05-t1-a
NESG2101M05-A
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2012 NEC
Abstract: NESG3031M05 NESG3031M05-A NESG3031M05-T1 transistor marking T1k ghz
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
NESG30NEC
2012 NEC
NESG3031M05
NESG3031M05-A
NESG3031M05-T1
transistor marking T1k ghz
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2031M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0035EJ0400 Rev. 4.00 Jun 20, 2012 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2031M05
R09DS0035EJ0400
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NESG2021M05
Abstract: NESG2021M05-T1 transistor s2p
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications
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NESG2021M05
PU10188EJ02V0DS
NESG2021M05
NESG2021M05-T1
transistor s2p
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FM401
Abstract: FM404 FM407 FM405 FM402 FM403 FM406
Text: LESHAN RADIO COMPANY, LTD. FM401 – FM407 1A 1A GLASS PASSIVATED SMA DIODES TYPE FM401 FM402 FM403 FM404 FM405 FM406 FM407 Marking M01 M02 M03 M04 M05 M06 M07 VRRM V IF (A) V F (V) IRMI(µA) IP8M(A) 50 100 200 400 600 800 1000 1.0 1.10 5.0 30 Package Dimensions
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FM401
FM407
FM402
FM403
FM404
FM405
FM406
214AC
FM401
FM404
FM407
FM405
FM402
FM403
FM406
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NESG3031M05
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
NESG3031M05
NESG3031M05-T1
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NESG3031M05-T1-A
Abstract: NESG3031M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
NESG3031M05
NESG3031M05-T1-A
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2031M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0035EJ0400 Rev. 4.00 Jun 20, 2012 FEATURES • The device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2031M05
R09DS0035EJ0400
NESG2031M05
NESG2031M05-T1
NESG2031M05ctronics
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2021M05 NPN SiGe RF Transistor for Low Noise, High-Gain Amplification Flat-Lead 4-Pin Thin-Type Super Minimold M05 R09DS0034EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • This device is an ideal choice for low noise, high-gain at low current amplifications.
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NESG2021M05
R09DS0034EJ0300
NESG2021M05
NESG2021M05-T1
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2012 NEC
Abstract: transistor marking T1k ghz nec 2012 NESG3031M05 NESG3031M05-T1 MARKING T1K transistor marking T1k
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05, 2012 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG3031M05
2012 NEC
transistor marking T1k ghz
nec 2012
NESG3031M05
NESG3031M05-T1
MARKING T1K
transistor marking T1k
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transistor T1J
Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M05
NESG2101M05-A
NESG2101M05-TERISTICS
PU10190EJ02V0DS
transistor T1J
transistor T1J 4pin
M05 MARKING
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Untitled
Abstract: No abstract text available
Text: Data Sheet NESG2101M05 NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW Flat-Lead 4-Pin Thin-Type Super Minimold (M05) R09DS0036EJ0300 Rev. 3.00 Jun 20, 2012 FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
R09DS0036EJ0300
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transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
PU10190EJ02V0DS
transistor T1J
NESG2101M05-T1
NESG2101M05
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PY 472 M
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS PY Low Im pedance, High Reliability Z IP 1Smaller case size than PL series. 1Lower impedance at high frequency range. P Y K . Smaller | P L I •Specifications Performance Characteristics Item - 5 5 — M05°C Operating Temperature Range
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120Hz,
10X12
10X16
10X20
16X25
16X31
18X35
18X40
PY 472 M
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M05 TYPE L2- tt-M OSV 2SJ36Q HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1.6MAX A. 6 MAX.
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2SJ360
2SJ36Q
--60V)
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AII313101MID
Abstract: z25ic
Text: n ic liic o z i ALUMINUM ELECTROLYTIC CAPACITORS ST 7mmL, Wide Temperature Range series • Wide temperature range of — 55— M05°c, with 7mm height. I ST I SAI iSpecifications Item Performance Characteristics O perating Tem perature Range — 55— Voltage Range
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120Hz,
120Hz
AII313101MID
z25ic
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS MT x iic h ic o n 5mml_, W ide Tem perature Range series Anti-Solv Feature Wide temperature range of — 55— M05°C, with 5mm height. 1 MT I MA [Specifications Item Performance Characteristics Operating Temperature Range
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120Hz,
120Hz
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS WT nicRicon S3 5.5m m L Chip Type, W ide Tem perature Range Chip type with 5.5mm height, operating over wide temperature range of — 55— M05°C. Designed for surface mounting on high density PC board. Applicable to automatic mounting machine using carrier tape.
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120Hz
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J160I
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS SF ZIP 7mmL, Low Im pedance series Low impedance over wide temperature range of — 55— M05°C, with 7mm height. « □ Im p ed a n c e S T •S p ecificatio ns Item Performance C haracteristics Operating Temperature Range
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120Hz,
100kHz
100kHz
J160I
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS MF 5mmL, Low Im pedance XAKckicon Z IP series Low Impedance Anti-Solvent Feature Low impedance over wide temperature range of — 55— M05°C, with 5mm height. Suited for DC-DC converters where smaller case size and lower impedance are required.
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120Hz,
C-5141
C-5102.
100kHz
100kHz
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M05 TYPE L2- tt-M O$V ? <; \c i q 1 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION INDUSTRIAL APPLICATIONS Unit in mm 5.1 MAX. Low Drain-Source ON Resistance : Rüg (ON) —0.20 (Typ.)
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2SK2961
100/zA
120COMlî
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