FPT-160P-M03
Abstract: QFP160-P-2828-3 80 m03
Text: QUAD FLAT L-LEADED PACKAGE 160 PIN PLASTIC FPT-160P-M03 EIAJ code : ∗QFP160-P-2828-3 160-pin plastic QFP Lead pitch 0.65mm Package width x package length 28 × 28mm Lead shape Gullwing Sealing method Plastic mold Length of flat portion of pins 0.80mm FPT-160P-M03
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FPT-160P-M03
QFP160-P-2828-3
160-pin
FPT-160P-M03)
FPT-160P-M03
QFP160-P-2828-3
80 m03
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968 led
Abstract: No abstract text available
Text: DUAL IN-LINE PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 20 PIN PLASTIC To Top / Package Lineup / Package Index DIP-20P-M03 EIAJ code :∗DIP020-P-0300-3 20-pin plastic DIP Lead pitch 100 mil Row spacing 300 mil Sealing method Plastic mold DIP-20P-M03 20-pin plastic DIP
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DIP-20P-M03
DIP020-P-0300-3
20-pin
DIP-20P-M03)
D20011S-1C-3
968 led
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QFP120
Abstract: 120p
Text: QUAD FLAT L-LEADED PACKAGE 120 PIN PLASTIC FPT-120P-M03 EIAJ code : ∗QFP120-P-2828-3 120-pin plastic QFP Lead pitch 0.80mm Package width x package length 28 × 28mm Lead shape Gullwing Sealing method Plastic mold Length of flat portion of pins 0.80mm FPT-120P-M03
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FPT-120P-M03
QFP120-P-2828-3
120-pin
FPT-120P-M03)
QFP120
120p
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nec 16312
Abstract: 2SC5800 NE851M03 NE851M03-T3 S21E nec 9701
Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS
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NE851M03
NE851M03
nec 16312
2SC5800
NE851M03-T3
S21E
nec 9701
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FPT-160P-M03
Abstract: QFP160-P-2828-3
Text: QUAD FLAT L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 160 PIN PLASTIC To Top / Package Lineup / Package Index FPT-160P-M03 EIAJ code :∗QFP160-P-2828-3 160-pin plastic QFP Lead pitch 0.65 mm Package width x package length 28 × 28 mm Lead shape Gullwing
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FPT-160P-M03
QFP160-P-2828-3
160-pin
FPT-160P-M03)
F160004S-3C-2
FPT-160P-M03
QFP160-P-2828-3
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FPT-120P-M03
Abstract: QFP120
Text: QUAD FLAT L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 120 PIN PLASTIC To Top / Package Lineup / Package Index FPT-120P-M03 EIAJ code :∗QFP120-P-2828-3 120-pin plastic QFP Lead pitch 0.80 mm Package width x package length 28 × 28 mm Lead shape Gullwing
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FPT-120P-M03
QFP120-P-2828-3
120-pin
FPT-120P-M03)
F120004S-3C-2
FPT-120P-M03
QFP120
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LCC 18 Pin Package
Abstract: QFJ018-P-R285-3 18pin Plastic QFJ LCC 16 Pin Package
Text: PLASTIC LEADED CHIP CARRIER FUJITSU SEMICONDUCTOR DATA SHEET 18 PIN PLASTIC To Top / Package Lineup / Package Index LCC-18P-M03 EIAJ code :∗QFJ018-P-R285-3 18-pin plastic QFJ PLCC Lead pitch 50 mil Package width x package length 285 × 425 mil Lead shape
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LCC-18P-M03
QFJ018-P-R285-3
18-pin
LCC-18P-M03)
C18018S-1C-4
LCC 18 Pin Package
QFJ018-P-R285-3
18pin Plastic QFJ
LCC 16 Pin Package
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Untitled
Abstract: No abstract text available
Text: Accessories Connectors and cables Z 165.M Part number Z 165.M01 Motor supply cable 1.5 m, 8-pin mating conntector Z 165.M02 Motor supply cable 3 m, 8-pin mating connector Z 165.M03 Motor supply cable 10 m, 8-pin mating connector Suitable for Dimensions 1 www.baumer.com/motion
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BG440,
BG650
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TMP68303F16
Abstract: No abstract text available
Text: TMP68303F-16 1/3 IL22 * C-MOS 16-BIT MICRO PROCESSOR 51 55 GND 76 60 65 70 VDD(+5V) 75 —TOP VIEW— VDD(+5V) 50 80 45 85 40 GND GND 90 35 95 26 25 20 15 GND 5 10 VDD(+5V) 1 100 VDD(+5V) 30 (VDD = +5 V) PIN No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14
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TMP68303F-16
16-BIT
10-BIT
P00-03
P10-13
D0-D15
A0-A23
TMP68303F-16
TMP68303F16
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431 transistor
Abstract: BJT IC Vce NE AND micro-X 2SC5433 NE681 NE681M03 S21E
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance
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NE681M03
NE681M03
NE681
c8e-12
12e-9
10e-9
2e-12
4e-12
24-Hour
431 transistor
BJT IC Vce
NE AND micro-X
2SC5433
S21E
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bjt npn m03
Abstract: BR 123 m03 bjt npn 2SC5437 NE688 NE688M03 S21E
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.4±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • • PACKAGE OUTLINE M03
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NE688M03
NE688M03
24-Hour
bjt npn m03
BR 123
m03 bjt npn
2SC5437
NE688
S21E
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m03 transistor
Abstract: NE AND micro-X nec 08e 2SC5434 NE680 NE680M03 S21E BF179 bjt npn m03 low noise transistor bF 179
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:
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NE680M03
NE680M03
24-Hour
m03 transistor
NE AND micro-X
nec 08e
2SC5434
NE680
S21E
BF179
bjt npn m03
low noise transistor bF 179
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bjt microwave 15 GHz npn
Abstract: 2SC5436 NE687 NE687M03 S21E transistor 1038 BF-104
Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance
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NE687M03
NE687M03
687M03
26e-12
19e-12
08e-12
12e-9
10e-9
bjt microwave 15 GHz npn
2SC5436
NE687
S21E
transistor 1038
BF-104
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DIODE MARKING code SM05
Abstract: marking code SM15 diode SM03 M24 sot23 TVS m05 marking code m15 SM05 SM12 SM15 SM36
Text: SM03 thru SM36, e3 Bidirectional/Unidirectional TVSarray SCOTTSDALE DIVISION PRODUCT PREVIEW DESCRIPTION 300 watt This 3 pin TRANSIENT VOLTAGE SUPPRESSOR offers 2 unidirectional or 1 bidirectional protection at the board level from voltage transients caused by
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dash tool 2.5
Abstract: TM0001 TL0001
Text: SPEC Pak Sealed Power For Environmental Connections Marine | Machine Tool Wind Power | | Lighting | Transportation Industrial Automation | Motor | | Pumps Solar Power | | Ground Support Harsh Environments APP’s new SPEC Pak Mini 3 position connector is a
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UL1977
requirement-422-3700
dash tool 2.5
TM0001
TL0001
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SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
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08/2M
SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
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MB15A02PFV1
Abstract: CMOS 7-bit programmable counter DS0432 MB15A02 MB15A02PF
Text: DS04–21321–1aE DATA SHEET MB15A02 ASSP SERIAL INPUT PLL FREQUENCY SYNTHESIZER LOW POWER SERIAL INPUT PLL SYNTHESIZER WITH 1.1GHZ PRESCALER The Fujitsu MB15A02, utilizing Bi-CMOS technology, is a single chip serial input PLL synthesizer with pulse-swallow function.
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MB15A02
MB15A02,
16-bit
15-bit
14-bit
19-bit
18-bit
11-bit
I9503
MB15A02PFV1
CMOS 7-bit programmable counter
DS0432
MB15A02PF
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sm08 diode
Abstract: No abstract text available
Text: SM03 thru SM36 TVS Diode Array APPLICATIONS ◆ Cellular Handsets and Accessories SOT-23 ◆ Portable Electronics ◆ Industrial Controls ◆ Set-Top Box ◆ Instrumentation ◆ Servers, Notebook, and Desktop PC IEC COMPATIBILITY ◆ IEC61000-4-2 ESD ±15kV (air), ±8kV (contact)
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OT-23
IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
OT-23
sm08 diode
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Untitled
Abstract: No abstract text available
Text: WOST03C thru WOST36C Surface Mount TVS Diode Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-36 VOLTS P b Lead Pb -Free Features: * Transient Protection for data lines as per IEC 61000-4-2(ESD)15KV(air), 8KV(contact) * 300 Watts Peak Power Protection. (tp=8/20µS)
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WOST03C
WOST36C
OT-23/SC-59
OT-23
24-Apr-07
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Untitled
Abstract: No abstract text available
Text: WOST03C thru WOST36C Surface Mount TVS Diode Array TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-36 VOLTS P b Lead Pb -Free Features: * Protects Two Unidirectional Line or One Bidirectional Line. * Low Leakage Current. * 300 Watts Peak Power Protection. (tp=8/20µS)
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WOST03C
WOST36C
SC-59
SC-59
10nfiguration
29-Aug-05
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m33 tf 130
Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP
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NE68039
NE68139
NE68539
NE85639
OT-143
ne68000
ne68100
ne85600
UPA862TD
NE894
m33 tf 130
NESG204619
NESG2046
NESG2030M042
NESG2101M05
NE68030
NE68033
NE68039
NE68133
NE68539
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marking code m15
Abstract: tvs diode marking code fo WOST05C TVS m05 marking PP marking code M36 15KV WOST03C WOST12C WOST36C
Text: WOST03C thru WOST36C Surface Mount TVS Diode Array for ESD Protection TRANSIENT VOLTAGE SUPPRESSORS 300 WATTS 3-36 VOLTS P b Lead Pb -Free Features: * Transient Protection for data lines as per IEC 61000-4-2(ESD)15KV(air), 8KV(contact) * 300 Watts Peak Power Protection. (tp=8/20µS)
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WOST03C
WOST36C
SC-59
SC-59
19-Dec-05
marking code m15
tvs diode marking code fo
WOST05C
TVS m05
marking PP
marking code M36
15KV
WOST12C
WOST36C
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Untitled
Abstract: No abstract text available
Text: ELMO EMM02MS08 CMOS STATIC RAM MODULE: 256K x 8 DESCRIPTION The ELMO EMM02MS08 is a 262,144-word x 8-bit high speed BiCMOS static RAM module suitable for use in low power and high speed applications. It is available in several package and speed options, and operates from a single +5V supply.
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OCR Scan
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EMM02MS08
EMM02MS08
144-word
100ns
400mW
600-mil
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concurrent rdram
Abstract: 06TXE
Text: TNETX4080 ThunderSWITCH II 8-PORT 10-/1OO-MBIT/S ETHERNET™ SWITCH S P W S 050-A U G U S T 1998 Single-Chip 100-Mbit/s Device EEPROM Interface for Autoconfiguration No CPU Required for Nonmanaged Switch Integrated Address-Lookup Engine and Table Memory for 1-K Addresses
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TNETX4080
10-/1OO-MBIT/S
100-Mbit/s
concurrent rdram
06TXE
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