Vishay Conditioner A
Abstract: GT-14 dupont mylar rohs m-bond 450 b
Text: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A RoHS • M-Prep Neutralizer 5A COMPLIANT • GSP-1 Gauze Sponges
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GT-14
08-Apr-05
Vishay Conditioner A
dupont mylar rohs
m-bond 450 b
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Untitled
Abstract: No abstract text available
Text: M-Bond 450 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges CSP-1 Cotton Applicators
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GT-14
B-152,
24-Jun-10
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cancer data
Abstract: 14032 m-bond 450 b
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part A November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM055G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
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MGM055G
805-FRM011
cancer data
14032
m-bond 450 b
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transistor A 27611
Abstract: 27611 LD50 ketone 14033
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part B November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM056G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
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MGM056G
805-FRM011
transistor A 27611
27611
LD50
ketone
14033
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Chip Advanced Tech
Abstract: XP1006 XP1006 bonding
Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
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XP1014-BD
XP1006
MIL-STD-883
01-Sep-10
XP1014
I0005129
Chip Advanced Tech
XP1006 bonding
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PDF
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P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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APH478
P1014
14-Apr-06
XP1006/7
MIL-STD-883
XP1014
I0005129
P1014
xp1014
84-1LMI
XP1006 bonding
GHz HPA
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PDF
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x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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p1014
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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01-Nov-06
APH478
P1014
XP1014
I0005129
XP1006
MIL-STD-883
XP1014-BD-000W
XP1014-BD-000V
XP1014-BD-EV1
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Untitled
Abstract: No abstract text available
Text: TR3547 LEDs CxxxTR3547-Sxx00 Data Sheet Cree’s TR3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
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TR3547â
CxxxTR3547-Sxx00
TR3547
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Microsemi LX3055
Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
Text: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offer high responsivity, low dark current, and
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LX3055
1310nm
1550nm
LX3055
Microsemi LX3055
photo diode 10 Gbps
1550nm photodiode 1.6 Ghz
VCSEL 1550 nm 1 Gbps
1550nm VCSEL
InGaAs Photodiode 1550nm
PHOTO diode
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PDF
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Untitled
Abstract: No abstract text available
Text: TR5050M LEDs CxxxTR5050M-Sxx000 Data Sheet Cree’s TR5050M LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
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TR5050Mâ
CxxxTR5050M-Sxx000
TR5050M
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TGA4522
Abstract: No abstract text available
Text: Advance Product Information September 21, 2005 33 - 47 GHz Wide Band Driver Amplifier TGA4522 Key Features • • • • • • • • • Frequency Range: 33 - 47 GHz 27.5 dBm Nominal Psat @ 38GHz 27 dBm P1dB @ 38 GHz 36 dBm OTOI @ Pin = 19 dBm/Tone 18 dB Nominal Gain @ 38GHz
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TGA4522
38GHz
TGA4522
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Untitled
Abstract: No abstract text available
Text: Cree UltraThin Gen III LEDs Data Sheet CxxxUT190-Sxxxx-31 Cree’s UltraThin LEDs combine highly eficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
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CxxxUT190-Sxxxx-31
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Untitled
Abstract: No abstract text available
Text: UltraThin LEDs CxxxUT230-S0002 Cree’s UltraThin LEDs combine highly eficient InGaN materials with Cree’s proprietary G•SiC substrate to deliver superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
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CxxxUT230-S0002
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alpha detector
Abstract: CDC7622 on/gold detectors circuit
Text: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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OCR Scan
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CDX76XX,
CME7660
CDB7619
3E-09
1E-11
1E-05
1E-05
CDC7622
CDB7619
alpha detector
CDC7622
on/gold detectors circuit
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PDF
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Untitled
Abstract: No abstract text available
Text: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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OCR Scan
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CDX76XX,
CME7660
comm69
1E-05
CDC7622
3E-06
1E-11
CDB7619
3E-09
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PDF
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2N6580
Abstract: 2N6583 2N6581 OTC433C OTC4830 OTC483Q SVT400-3 SVT400-5
Text: OPTEK TECHNOLOGY INC MAE D • aCJDlBflS blS ■ Product Bulletin OHC4830 August 1990 OTK W NPN Power Switching Transistor Die .O P T E K -r-35-\°\ Type OTC483Q 450V, 5A Applications • • • • • Switching Regulators PWM Inverters Motor Controls
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OCR Scan
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OHC4830
OTC4830
OTC433C)
4830-400L
4830-400H
OTC483Q
2N6580,
2N6581,
2N6583,
SVT400-3,
2N6580
2N6583
2N6581
OTC433C
SVT400-3
SVT400-5
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PDF
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t6060
Abstract: T-6060
Text: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1
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OCR Scan
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OTC1015
OTC1015,
OTC6030,
OTC6050
OTC6030
t6060
T-6060
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PDF
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SVT-6060
Abstract: oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC1015 OTC6030 OTC6050
Text: OPTEK TE CH NO LOG Y INC Product Bulletin OTC1015 August 1990_ MAE D L h a s s a 000130^ OTK ata SQ7. u r I c rv NPN Power Darlington Die Types OTC1015, OTC6030, QTC6050 450V, 20A Collector Schematic Note 7 Base 1 0- n r “ *! Q1 Q2 D2 R1
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OCR Scan
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OTC1015
OTC1015,
OTC6030,
OTC6050
OTC1015
OTC6030
OTC6050
U1K50nS
M4307
200fiHY
SVT-6060
oms 450
SVT6000
SVT6060
SVT-6000
2N3467
DTC6050
OTC6030
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PDF
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SA051
Abstract: HEMT Amplifier
Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA
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OCR Scan
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APH212C
APH212C
SA051
006/J-2
SA051
HEMT Amplifier
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET G a As MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: /u rn Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 - Ga = 9.0 dB TYP. at f : 12 GHz Gate length: Lg
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OCR Scan
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NE76000
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PDF
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Untitled
Abstract: No abstract text available
Text: T R I Q U I N T S E M I C O N D U C T O R , I N C T O S tl General Description TQ6202 Biock Diagram 622-Mb/s Wide DynamicRange Transimpedance Amplifier PRELIMINARY DATA SHEET Features • Low-noise GaAs MESFET process • Self-contained AGC circuit The TQ6202 employs a high-gain amplifier with AGC. It is designed for use
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OCR Scan
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TQ6202
TQ6202
622-Mb/s
TQ6202-D
DK2740
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PDF
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ne800299
Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY
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OCR Scan
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NE800196
NE800296
NE8001
NE8002
lS21l
lS22l
IS12I
L42752S
ne800299
NE800199
NE800200
40MAG
NE800
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PDF
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Untitled
Abstract: No abstract text available
Text: Self mounting N G P antenna with pre installed Complete self mounting U H F N G P antenna with coax, no whip, 4 0 6 -512 M H z pre installed coax and whip, 406 -512 M H z W0DFI M0DEI FREQUENCY 0M 406BC0 406-440 MHz 0M 406CK 406-420 MHz OM 450 BC0 440-490 MHz
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OCR Scan
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406BC0
QM49QBCO
406CK
440CK
490CK
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PDF
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