Vishay Conditioner A
Abstract: GT-14 dupont mylar rohs m-bond 450 b
Text: M-Bond 450 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A RoHS • M-Prep Neutralizer 5A COMPLIANT • GSP-1 Gauze Sponges
|
Original
|
GT-14
08-Apr-05
Vishay Conditioner A
dupont mylar rohs
m-bond 450 b
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M-Bond 450 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 450 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges CSP-1 Cotton Applicators
|
Original
|
GT-14
B-152,
24-Jun-10
|
PDF
|
cancer data
Abstract: 14032 m-bond 450 b
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part A November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM055G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
|
Original
|
MGM055G
805-FRM011
cancer data
14032
m-bond 450 b
|
PDF
|
transistor A 27611
Abstract: 27611 LD50 ketone 14033
Text: MATERIAL SAFETY DATA SHEET SECTION 1: CHEMICAL PRODUCT AND COMPANY IDENTIFICATION PRODUCT: M-Bond 450 Part B November 18, 2005 Vishay Micro-Measurements Post Office Box 27777 Raleigh, NC 27611 MSDS # MGM056G 919-365-3800 CHEMTREC 1-800-424-9300 U.S. 703-527-3887 (Outside U.S.)
|
Original
|
MGM056G
805-FRM011
transistor A 27611
27611
LD50
ketone
14033
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TR5270 LEDs CxxxTR5270-Sxx00 175- m CxxxTR5270-Sxx00-3 (250- m) Data Sheet Cree’s TR5270 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
|
Original
|
TR5270â
CxxxTR5270-Sxx00
CxxxTR5270-Sxx00-3
TR5270
TR5270
TR430
|
PDF
|
Chip Advanced Tech
Abstract: XP1006 XP1006 bonding
Text: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
XP1014-BD
XP1006
MIL-STD-883
01-Sep-10
XP1014
I0005129
Chip Advanced Tech
XP1006 bonding
|
PDF
|
P1021
Abstract: 18MPA0567 DM6030HK TS3332LD XP1021-BD XP1021-BD-000V XP1021-BD-EV1
Text: 17.0-22.0 GHz GaAs MMIC Power Amplifier P1021-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
|
Original
|
P1021-BD
17-Apr-07
MIL-STD-883
XP1021-BD
XP1021-BD-000V
XP1021-BD-EV1
XP1021
P1021
18MPA0567
DM6030HK
TS3332LD
XP1021-BD
XP1021-BD-000V
XP1021-BD-EV1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Direct Attach DA700 LEDs CxxxDA700-Sxx000 Data Sheet Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
|
Original
|
DA700â
CxxxDA700-Sxx000
DA700
DA700
|
PDF
|
P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
|
Original
|
APH478
P1014
14-Apr-06
XP1006/7
MIL-STD-883
XP1014
I0005129
P1014
xp1014
84-1LMI
XP1006 bonding
GHz HPA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Cree EZ500 Gen II LED Data Sheet CxxxEZ500-Sxxx00-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
|
Original
|
EZ500â
CxxxEZ500-Sxxx00-2
EZ500
|
PDF
|
VCSEL array, 850nm
Abstract: GaAs array, 850nm LX3044 LX3044-TR LX3045 LX3046 VCSEL array, 850nm flip
Text: Obsolete Product – Not Recommended For New Design LX3044 / 45 / 46 I N T E G R A T E D 10.3 Gbps Coplanar GaAs PIN Photo Diode P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION LX3044 Single Die LX3045, 1x4 Array Die LX3046, 1x12 Array Die
|
Original
|
LX3044
LX3045,
LX3046,
50ohm
125mm
LX304X
VCSEL array, 850nm
GaAs array, 850nm
LX3044-TR
LX3045
LX3046
VCSEL array, 850nm flip
|
PDF
|
x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Cree EZ600 Gen II LED Data Sheet CxxxEZ600-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
|
Original
|
EZ600â
CxxxEZ600-Sxx000-2
EZ600
|
PDF
|
silicon carbide
Abstract: KS5450A-M KS5450A-N KS5450A-O KS5450A-P KS5450A-Q IC TECHNOLOGY LED pulse derating curve silicon carbide LED
Text: InGaN•SiC Technology The Leader in Silicon Carbide Solid State Technology KSx450x-x Features l l l l High performance 3.5mw optical power 450nm Deep Blue Single Wire Bond Structure Class ESD Rating Ô3 Applications l l l l l l Outdoor LED Video Displays
|
Original
|
KSx450x-x
450nm
silicon carbide
KS5450A-M
KS5450A-N
KS5450A-O
KS5450A-P
KS5450A-Q
IC TECHNOLOGY
LED pulse derating curve
silicon carbide LED
|
PDF
|
|
|
p1014
Abstract: No abstract text available
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
|
Original
|
01-Nov-06
APH478
P1014
XP1014
I0005129
XP1006
MIL-STD-883
XP1014-BD-000W
XP1014-BD-000V
XP1014-BD-EV1
|
PDF
|
alpha detector
Abstract: CDC7622 on/gold detectors circuit
Text: Universal Chip Mixer and Detector Schottky Barrier Diodes EBA lpha CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 W ire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
|
OCR Scan
|
CDX76XX,
CME7660
CDB7619
3E-09
1E-11
1E-05
1E-05
CDC7622
CDB7619
alpha detector
CDC7622
on/gold detectors circuit
|
PDF
|
APT1001RD
Abstract: APT5023
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
|
OCR Scan
|
APT-104
APT-105
APT-106
APT-107
APT-108
APT1001RD
APT5023
|
PDF
|
APT40M80DN
Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.
|
OCR Scan
|
APT-105
APT-106
APT-107
APT-108
APT40M80DN
APT801R2DN
mos die
APT-106
APT5020DN
APT5025DN
APT601R3DN
APT5540DN
APT5023
co257
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
|
OCR Scan
|
CDX76XX,
CME7660
comm69
1E-05
CDC7622
3E-06
1E-11
CDB7619
3E-09
|
PDF
|
NE9004
Abstract: NE900400 NE900474-15 NE900474-13 NE900400G NE9001 MC 88000
Text: Ku-BAND POWER GaAs MESFET FEATURES NE9004 SERIES NE900474-13.-15 OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER CLASS A OPERATION HIGH POWER ADDED EFFICIENCY EMPLOYS P.H.S. PLATED HEAT SINK AND VIA HOLE GROUNDING BROAD BANDWIDTH INPUT OF PACKAGED DEVICE PARTIALLY MATCHED
|
OCR Scan
|
NE9004
NE900474-13
NE900
NE9000,
NE9001
NE9002.
AN-1001
L427525
NE900400
NE900474-15
NE900400G
MC 88000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz
|
OCR Scan
|
NE24200
NE24200
24-Hour
|
PDF
|
t6060
Abstract: T-6060
Text: OPTEK TECHNOLOGY INC 40E d • L ? ciasaG oGG^ai a ta ■ otk I c iv Product Bulletin OTC1015 August 1990_ NPN Power Darlington Die "T'33 ^ Types OTC1015, OTC6030, OTC6050 450V, 20A Schematic Note 7 Base 1 o i - K Q1
|
OCR Scan
|
OTC1015
OTC1015,
OTC6030,
OTC6050
OTC6030
t6060
T-6060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical at f = 12 G Hz • LG = 0.25 Jim, Wg = 200 Jim
|
OCR Scan
|
NE32400
NE32400
24-Hour
|
PDF
|
SVT-6060
Abstract: oms 450 SVT6000 SVT6060 SVT-6000 2N3467 DTC6050 OTC1015 OTC6030 OTC6050
Text: OPTEK TE CH NO LOG Y INC Product Bulletin OTC1015 August 1990_ MAE D L h a s s a 000130^ OTK ata SQ7. u r I c rv NPN Power Darlington Die Types OTC1015, OTC6030, QTC6050 450V, 20A Collector Schematic Note 7 Base 1 0- n r “ *! Q1 Q2 D2 R1
|
OCR Scan
|
OTC1015
OTC1015,
OTC6030,
OTC6050
OTC1015
OTC6030
OTC6050
U1K50nS
M4307
200fiHY
SVT-6060
oms 450
SVT6000
SVT6060
SVT-6000
2N3467
DTC6050
OTC6030
|
PDF
|
