M 338 H Search Results

M 338 H Result Highlights (5)

Part	Manufacturer	Description
5962-9762201QEA	Texas Instruments	Quad LVDS Receiver 16-CDIP -55 to 125
SN65LV1023ARHBR	Texas Instruments	10:1 LVDS Serdes Transmitter 100 - 660Mbps 32-VQFN -40 to 85
SN65LV1224BDBR	Texas Instruments	1:10 LVDS Serdes Receiver 100 - 660Mbps 28-SSOP -40 to 85
SN65LVCP22DR	Texas Instruments	2x2 Crosspoint Switch : LVDS Outputs 16-SOIC -40 to 85
SN65LVCP23PW	Texas Instruments	2x2 Crosspoint Switch : LVPECL Outputs 16-TSSOP -40 to 85

M 338 H Price and Stock

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Microchip Technology Inc MIC3385YHL-TR Switching Voltage Regulators 8MHz Power System Module in 14ld MLF,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MIC3385YHL-TR		4,273			1 $3.03 10 $3.03 100 $2.52 1000 $2.29 10000 $2.29	Buy Now
KEMET Corporation ELH338M050AQ2AA Aluminum Electrolytic Capacitors - Snap In 3300uF 50Volts 85C 20% SNAP IN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	ELH338M050AQ2AA		1,097			1 $2.57 10 $1.97 100 $1.5 1000 $1.07 10000 $1.07	Buy Now
KEMET Corporation PHA225MLL3380QE4 Aluminum Organic Polymer Capacitors 63Vol 380uF AXI 3KHr ESR=147 mOhms AECQ20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	PHA225MLL3380QE4		1,086			1 $5.7 10 $4.52 100 $3.71 1000 $3.12 10000 $3.06	Buy Now
Analog Devices Inc LT3380HUJM#PBF Power Management Specialized - PMIC Multi-Out Pwr Mgmt Solution w I2C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	LT3380HUJM#PBF		794			1 $13.65 10 $11.58 100 $9.09 1000 $8 10000 $8	Buy Now
Belden Inc SCIHP1338-4R7M Power Inductors - SMD Inductor SMD 4.70uH 18A 15.0mohms 200KHz
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SCIHP1338-4R7M		479			1 $1.52 10 $1.29 100 $0.884 1000 $0.757 10000 $0.715	Buy Now

Find more M 338 H price and stock on Findchips.com

M 338 H Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SW-338 GaAs SPDT Terminated Switch DC - 2.5 GHz Rev. V7 Functional Schematic Features • • • • • • • M/A-COM Products Very Low Power Consumption High Isolation: 30 dB up to 2 GHz Very High Intercept Point: 46 dBm IP3 Nanosecond Switching Speed	Original	PDF	SW-338 SW-338
LT805 Abstract: ic 339 LT8050 Text: M/A-COM/ MICRO EL EC TR ON IC S SbM51fl3 DOÜOblD Ô25 fc.'ìE 3 IMACO 4 0 IC Ô M GaAs SPDT Terminated Switch DC-2.5 GHz Features SW-338, SW-339 SO-8 • Very Low Power Consumption: 75 \|iW • Low Insertion Loss: 0.5 dB • High Isolation: 33 dB up to 2 GHz SW-338)	OCR Scan	PDF	SbM51fl3 SW-338) SW-339) SW-338, SW-339 SW-338 LT805 ic 339 LT8050
Untitled Abstract: No abstract text available Text: 10 -Hi] B ( 1.75) n n n n n n n n n n H n n jm m ^{\ R4 =9 . ro — f- T *I -n jL n jim m m w im w L fU L n ji(5.4) SECT F IT T IN G NAI Z-Z 25.5 23 .6 27. 51338-1274 5 338- 209 20 21.5 19.6 23.1 51338-1674 51338-1009 100 19.5 17.6 21.1 51 338-0974 51 33 8- 0 99 9	OCR Scan	PDF	SD-51338-004 EN-02JA
Untitled Abstract: No abstract text available Text: a/7 A M P com pany GaAs SPDT Terminated Switch DC - 2.5 GHz SW-337, SW-338, SW-339 V2.00 Features SO-8 PIN i H H H • V ery Low P o w er C onsum ption: 7 5 pW O rientation m ark PIN 1— • Low In sertio n Loss: 0 .5 dB • H igh Isolation: 33 dB up to 2 GH z SW -337, SW -338	OCR Scan	PDF	SW-337, SW-338, SW-339
m 338 h Abstract: No abstract text available Text: M an A M P co m pa n y GaAs SPDT Terminated Switch DC-2.5 GHz SW-338, SW-339 SO-8 Features • V ery I.o w P o w e r C o n s u m p tio n : 75 \|i\X • I.o w I n s e r tio n Loss: 0 .5 dl! • H ig h Iso la tio n : 3 3 dB u p to 2 G H z SW -338 28 cJB up to I i ¿Hz (SW-339)	OCR Scan	PDF	SW-338, SW-339 SW-339) packagSW-338 m 338 h
KD 338 Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor Type BUZ 338 I N channel Enhancem ent mode Avalanche-rated W I • • • BUZ 338 500 V la ^DS on Package 1> O rdering Code 13.5 A 0.4 a TO -218 AA C67078-S3126-A2 M axim um Ratings Param eter Symbol Continuous drain current, Tc = 28 "C	OCR Scan	PDF	C67078-S3126-A2 KD 338
Transistor 337 Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor Text: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: AMPMODU .100 [2.54] Centerline Board-to-Board Headers Catalog 1307612 Revised 7-01 S tan d ard H eaders— U n shrouded, T rip le -R o w , .100 [2.54] C en terlin e .025 [0.64] Square Straight Post H m H H .338 [ 8 . 59 ] mm mm // m m is h m mm Material and Finish:	OCR Scan	PDF
2S0880 Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815 Text: - 212 - M € T ype No. t 2S0 330 ' = $ 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U	OCR Scan	PDF	2SC790 2SD795 2SD1135 2SD389 2SD2023 2SD313 2SC79Ã 2SD390 2S0880 2SD427 SD 338 2Sd428 2sd880 2SD2023 2SC2320 2SC1815
hitachi Abstract: IC 401 HITACHI HDL6M05584 M/M/din 4901 Text: Hitachi America, Ltd. SEMICONDUCTOR and IC DIVISION Hitachi A m erica, Ltd. Sem iconductor & IC Division Hitachi Plaza 2000 Sierra Point Parkway Brisbane, CA 94005-1819 Telephone: 415-589-8300 Telex: 17-1581 Twx: 910-338-2103 FAX: 415-583-4207 REGIONAL OFFICES	OCR Scan	PDF
ICA 700 Y Abstract: telephone Text: Hitachi America, Ltd. SEMICONDUCTOR & I.C. DIVISION Hitachi A m erica, Ltd. Sem iconductor & I.C. Division Hitachi Plaza 2000 Sierra Point Parkway Brisbane, CA 94005-1819 Telephone: 415-589-8300 Telex: 17-1581 Twx: 910-338-2103 Fax: 415-583-4207 REGIONAL OFFICES	OCR Scan	PDF
D0205AB Abstract: 1N3164 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174 Text: tary Silicon Power Rectifier a N3164 N3174 Dim. Inches M inim um A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - UNF 1.250 1.375 5.90	OCR Scan	PDF	D0205AB 1N3164 1N3164R 1N3168 1N3168R 1N3170 1N3170R 1N3172 1N3172R 1N3174 D0205AB
Untitled Abstract: No abstract text available Text: H itachi A m e ric a , Ltd. SEMICONDUCTOR & I.C. DIVISION Hitachi America, Ltd. Semiconductor & I.C. Division Hitachi Plaza 2000 Sierra Point Parkway Brisbane, CA 94005-1819 Telephone: 415-589-8300 Telex: 17-1581 Twx: 910-338-2103 FAX: 415-583-4207 REGIONAL OFFICES	OCR Scan	PDF	SOUT410
LN2054 Abstract: 1N1660 1N1661 1N1670 1N1671 1N2054 1N2055 1N3260 1N3261 1N4044 Text: Silicon Power Rectifier N4044—1N4056 rs * 1 Dim ï M illim eter Minimum Maximum Minimum Maximum Notes A B C D F G H J K M R S - c -H Inches M l- 1.218 1.350 5 .300 .793 .300 -.660 .338 .665 -.050 3 / 4 - 1 6 UNF 1.250 3 0.9 4 1.375 34.29 5.900	OCR Scan	PDF	D0205AB 1N4044 1N1660 1N1670 1N2054 1N3260 1N4045 1N1661 1N1671 1N2055 LN2054 1N3260 1N3261

TM5005 Abstract: No abstract text available Text: SEI 8 BitA/D Converter -Radiation Hardened ^ / QA D p f O O t l\ m For Space Applications s I I V -o -o -o -o -o F IT 000034D ÔSÛ 338 CONVERTER 'lO H E m D Tel: 619 452-4167 Fax: (619) 452-5499 INTERNET: 102005.1635@COMPUSERVE.COM to INCORPORATED A ELECTRONICS	OCR Scan	PDF	7684RP 7684R TM5005
UN412Y Abstract: UN421D UN421E UN421L UN511D UN511E UN511F UN511L UN511M UN521D Text: - 338 - m % UN412Y tt töT _ ffl « Digital Wik&fä Ta=25T;, EP(äTc=25T; VcBO Vc e o iC(DC) (V) (V) (A) -50 _ Pc (W) (W) m ICBO (max) <WA) VcB (V) m (min) hp m & 14 (max) Vc e (V) (Ta=25'C) Ic /I e (A) OTOtyp (max) (V) -50 -0. 5 0.3 -1 -50 50 -10 -0.1	OCR Scan	PDF	UN412Y UN421D UN421E UM21F UN421L UN512) UN612X UN612Y 47K/10K UN621D UN511D UN511E UN511F UN511L UN511M UN521D
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> w tis s - 001S030 M GFX38V0005 338 • 1 0 .0 — 10.5G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 8 V 0 0 0 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 10.0 ~ 10.5	OCR Scan	PDF	001S030 GFX38V0005
1N1662 Abstract: 1N2056 1N1660 1N1661 1N1670 1N1671 1N2054 1N3260 1N4044 1N4045 Text: Silicon Power Rectifier 1N4044—1N4056 Dim Inches M illim eter Minimum Maximum Minimum Maximum N otes A B C D F G H J K M R S 1.218 1.350 5 .30 0 .793 .300 -.660 .338 .665 -.050 3 /4 -1 6 1.250 1.375 5 .90 0 .8 28 .3 25 .9 00 .749 .3 48 .755 1.100	OCR Scan	PDF	1N4044â 1N4056 D0205AB 1N4044 1N1660 1N1670 1N2054 1N3260 1N4045 1N1661 1N1662 1N2056 1N1671 1N3260
m338a Abstract: LLM338 LM338 m 338 h 338P Text: SEMTECH CORP SfiE D • ô 13^ 1 3 Q O O S m Tfil LLM 138, LLM 338, LLM 338P 5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L MINIM UM M AXIM U M UNITS 35 Volts Input-O utput Voltage V\|N " VouT D ifferential Pow er	OCR Scan	PDF	O-247 0003P02 O-247 m338a LLM338 LM338 m 338 h 338P
Untitled Abstract: No abstract text available Text: Military Silicon Power Rectifier 1N3164 - 1N3174 Dim. Inches Minimum A B C D F G H J K M N R Notes: 1. Full threads within 2 1 /2 threads. 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode -.660 .338 .665 .125 - Maximum Minimum UNF	OCR Scan	PDF	1N3164 1N3174 D0205AB
Untitled Abstract: No abstract text available Text: CARD EDGE CONNECTORS Applicable for 303, 305, 306, 307, 310, 315, 316, 317, 321,325, 327, 333, 336, 337, 338, 340, 341,342, 345, 346, 355, 356, 357, 379, 384, 387, 391,392, 395 and 396 Series NO MOUNTING LUGS CONNECTOR CODE X02, x04 & x09 - THROul .H M U J N I ifMt- HOLKS	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage	OCR Scan	PDF	BC327/328 337/BC BC327 BC328
BD 338 N Abstract: TRANSISTOR BD 338 BD336 Text: _ J BD332; 334 BD336; 338 V SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications; plastic SOT-82 envelope for clip mounting; can also be soldered	OCR Scan	PDF	BD332; BD336; OT-82 BD331, BD333, BD337. BD332 0Q34370 BD 338 N TRANSISTOR BD 338 BD336
IMI7340 Abstract: IMI7160 IMI7000 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620 Text: m iT O Q Q ^ A M IU f CMOS GATE ARRAY NTERNATIONAL M IC R O CIR CU ITS I NC TELEPHONE: 408 263-6300 TWX: 910 338 2032 FAX: 408 263-6571 Oxide-isolated silicon-gate process Dual level metalization Fully autoroutable 792 to 12,000 2-input NAND equivalents Up to 220 I/O connections	OCR Scan	PDF	IMI7000 IMI7340 IMI7160 IMI7080 IMI7220 G4060 IMI712K G4000 IMI7490 IMI7620

M 338 H Search Results

M 338 H Result Highlights (5)

M 338 H Price and Stock

Microchip Technology Inc MIC3385YHL-TR

KEMET Corporation ELH338M050AQ2AA

KEMET Corporation PHA225MLL3380QE4

Analog Devices Inc LT3380HUJM#PBF

Belden Inc SCIHP1338-4R7M

M 338 H Datasheets Context Search

Untitled

LT805

Untitled

Untitled

m 338 h

KD 338

Transistor 337

Untitled

2S0880

hitachi

ICA 700 Y

D0205AB

Untitled

LN2054

TM5005

UN412Y

Untitled

1N1662

m338a

Untitled

Untitled

Untitled

BD 338 N

IMI7340