72194
Abstract: No abstract text available
Text: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S
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SUM110P08-11L
O-263
SUM110P08-11L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
72194
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Untitled
Abstract: No abstract text available
Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC
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SUM110N04-2m1P
O-263
SUM110N04-2m1P-E3
11-Mar-11
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TB 5843
Abstract: No abstract text available
Text: SUM36N20-54P Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ.) 57 • • • • TrenchFET Power MOSFETs 175 °C Junction Temperature 100 % Rg and UIS Tested
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SUM36N20-54P
2002/95/EC
O-263
SUM36N20-54P-E3
11-Mar-11
TB 5843
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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SUM110P04-05
O-263
SUM110P04-05-E3
11-Mar-11
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sum90p10-19l-e3
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sum90p10-19l-e3
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Untitled
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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sum90p10-19l-e3
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
11-Mar-11
sum90p10-19l-e3
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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SUM110P04-05
O-263
SUM110P04-05-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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SUM110P04-05
O-263
SUM110P04-05-E3
25electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC
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SUM110N04-2m1P
O-263
SUM110N04-2m1P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC
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SUM90P10-19L
2002/95/EC
O-263
SUM90P10-19L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see
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SUM110P08-11L
O-263
SUM110P08-11L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SUM110P08-11L rev
Abstract: No abstract text available
Text: SUM110P08-11L Vishay Siliconix P-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 80 b RDS(on) () ID (A) 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 Qg (Typ) 85 nC • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see
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SUM110P08-11L
O-263
SUM110P08-11L-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SUM110P08-11L rev
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Untitled
Abstract: No abstract text available
Text: SUM36N20-54P Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ.) 57 • • • • TrenchFET Power MOSFETs 175 °C Junction Temperature 100 % Rg and UIS Tested
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SUM36N20-54P
2002/95/EC
O-263
SUM36N20-54P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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SUM110P04-05
O-263
SUM110P04-05-E3
25emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D
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Original
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SUM110P04-05
O-263
SUM110P04-05-E3
25electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM36N20-54P Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.053 at VGS = 15 V 36 0.054 at VGS = 10 V 36 Qg (Typ.) 57 • • • • TrenchFET Power MOSFETs 175 °C Junction Temperature 100 % Rg and UIS Tested
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SUM36N20-54P
2002/95/EC
O-263
SUM36N20-54P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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SUM90N03-2m2P
O-263
SUM90N03-2m2P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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74342
Abstract: No abstract text available
Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:
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SUM90N03-2m2P
O-263
SUM90N03-2m2P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
74342
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SM5843
Abstract: CXD2500Q sm5843 as YM3623B pa hf dil 18 mz NJ 20 U1 W Yamaha AX 496 yamaha fc-5 yamaha ic
Text: SM5843Ax1 fUPC mm5 V Z h ' y *i \/% fV NIPPON PRECISION CIRCUITS INC. S SM5843Axl i, 8{ & £ > ^ - (•< > £ - t f l / - ' > 3 » £ fr& 5 /c tf> 0 X 1 6 /1 8 /2 0 t:'* y £1\ £ /c , f r > W •ft •mm 1 8 /2 0 t* y b I ^ & ; £ [ f r- £ K # ] £ ; L ' 0 '
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SM5843Ax1
SM5843Axlf-f
A16/18/20tfy
18/20fc
00005dB)
4535fs
5465fs-7
455fs
745fs-7
SM5843
CXD2500Q
sm5843 as
YM3623B
pa hf
dil 18 mz
NJ 20 U1 W
Yamaha AX 496
yamaha fc-5
yamaha ic
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smd diode code 33-16
Abstract: pj 3316 diode ,32.768 MHZ OSCILLATOR NOT GIVING OUTPUT BC602 GK724 your asl electronics sm 3316
Text: I i pu Hi p j BUS 1, ailer-iDon Call Wailing CiUGW receiver 11 March 1999 P r o d u c t s p e c if ic a t io n General d&scriptfon The P C D 3316 is a low pow er m ixed signal C M O S integrated circuit fo r receiving physical layer signals like B ellcore’s ‘C P E 1 A lerting Signal (C A S )’ and the signals
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3579545 crystal oscillator kss 7b
Abstract: PCD3316 PCD3316T RFT Semiconductors
Text: Philips Semiconductors Cl DCW receiver CONTENTS 1 FEATURES 2 APPLICATIONS 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 BLOCK DIAGRAM 6 PINNING 7 FUNCTIONAL DESCRIPTION 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 7.9 7.10 7.11 7.12 7.12.1 7.12.2 7.12.3 7.12.4 7.12.5
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CXC320
Abstract: TB 5843 CXC20C cxc400 CXC300 CXC81 CXC18C CXC935 CXC11 100A249
Text: R ectifier D iodes ~ Capsule types Type ^RRM Range ^F AV Ths55°C ^F(RMS) @ 25°C If @ 25°C I fSM(2) 10m s V R=s60% V R^ 1 0 V ^RRM (Note 2) (Note 2) I2t (2) 10m s I rrm (V) (A) (A) (A) (A) (A) (Note 2) (A2S) SWxCXC300 200-1500 650 1170 1000 5500 6050 183 x 103
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Ths55
SWxCXC300
SWxCXC320
SWxCXC380
SWxCXC400
SWxCXC470
SWxCXC445
SWxCXC565
SWxCXC350
SWxCXC515
CXC320
TB 5843
CXC20C
cxc400
CXC300
CXC81
CXC18C
CXC935
CXC11
100A249
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5843 Monolithic Linear 1C LA71525M S A flY O l Video/audio signal processor for VHS VCRs single chip for Y/C/A Overview Package Dimensions The LA71525M is a video/audio signal processor IC unit: mm for VHS VCRs. It handles recording and playback of
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EN5843
LA71525M
LA71525M
3174-QFP80E
A10386
43kCl
24K1f
39kfl_
0D5535T
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