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    LZ95300

    Abstract: NT315 LZ96650 LZ9G5100
    Text: GATE ARRAY GATE ARRAYS ★ Under development SFASIC ♦ Features • A variety of feature-intensive devices are available, including the “sea of gate” gate arrays featuring a wide range of functional blocks and high speeds, and CMOS gate arrays with low operating voltage.


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    PDF LZ9J10000 LZ9J12500 LZ9J15000 LZ9J20000 LZ9J25000 LZ9J30000 J38000 LZ9J50000 LZ9J60000 LZ9J67000 LZ95300 NT315 LZ96650 LZ9G5100

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    LZ9G5100

    Abstract: No abstract text available
    Text: GATE ARRAYS AND CELL-BASED ICs High-Density Sea-of-Gate type Gate c o u n t i LZ9G series Internal gate 0.9 ns/gate Vcc = 5 V, F.O. = 2, l = 2 mm Input buffer 2.7 ns (Vcc = 5 V, F.O. =2, I = 2 mm) Output buffer j 5.0 ns (Vcc = 5 V, C l 750 gates 2.0 to 5.5 V


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    PDF LZ9G750 LZ9G1900 LZ9G3400 LZ9G5100 LZ9G7000 LZ9G9800 LZ9G11000 LZ9000 LZ9F87000 LZ9F106000

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    LZ08

    Abstract: LZ95
    Text: GATE ARRAYS AND CELL-BASED ICs SF’ASC M y ★ Under development L in eu p off G a te A rra y s ns ! 0.4 ( 0.5 O I I LZ9A ssries ( ( 0.6 *LZ9 F series LZ08 series ' ) ' E ( >, 0.9 *LZ9G series ) <D Q 1.2 ( LZ95 series 1.7 9.5 LZ93 series ( 300 ) ) LZ96 series iow'Voltage operation)


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    PDF LZ9F10000 LZ9F19000 LZ9F27000 LZ9F36000 LZ9F42000 LZ9F56000 LZ9F71000 LZ9F87000 LZ9F106000 LZ9F125000 LZ08 LZ95

    LZ98B000

    Abstract: 000GATES
    Text: CELL-BASED ICs Gate Arrays I •M Lineup of Gate A rrays ns I ( 0.4 ( 0.5 ★ L Z 9 F series 0.6 ( Ï« 09 ( I I I LZ9A series ) ] LZ98 series LZ9G series ) ) Q 1.2 ( 1.7 ^ 9.5 ( LZ95 series LZ93 series 300 ) ) I l I I LZ96 series (low-voltage operation)


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    PDF LZ931000 LZ93600 LZ9F3000 LZ9F5000 LZ9F7000 LZ9F10000 LZ9F12000 LZ9F19000 LZ9F27000 LZ9F36000 LZ98B000 000GATES

    LZ9G5100

    Abstract: No abstract text available
    Text: GATEARRAYS AND CELL-BASED ICs Si^* '-MSI Cl Gate Arrays Lineup of Gate Arrays ns 0.10 I I C 0.15 LZ9K ( LZ9J series ( LZ9B series I series I j y <D ¡1 0.4 >< a a) Q 0.5 0.9 ( LZ9F ( LZ9G J series ) series I I * I 300 500 1k 3k I I 5k 10k 30k 50k 100k 200k


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