msp430 TSS721
Abstract: PCI2040 12v class d amplifier 8500 w mono PCI2040GGU PCI2040PGE SN74ACT8990 TLFD500 TLV320AD11A TLV320AD12A TMS320C6000
Text: T H E JULY/AUGUST 1999 W O R L D L E A D E R I N D S P A N D A N A L O G Showcase ISSUE 3 Inside PCI PCI bus bridge to DSPs 2 DSL CODEC Codecs for Digital Subscriber Line 3 IEEE 1394 1394a link layer controller 4 HMC Local/remote temperature monitor, fan controller
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Original
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1394a
A050699
SLYM043
msp430 TSS721
PCI2040
12v class d amplifier 8500 w mono
PCI2040GGU
PCI2040PGE
SN74ACT8990
TLFD500
TLV320AD11A
TLV320AD12A
TMS320C6000
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PDF
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TRANSISTOR BL 100
Abstract: transistor marking LG sot-323 Marking LG 2SC4116W transistor marking code lg LY SOT323 SOT 23 LY transistor marking c rank Y 2SA1586 ly transistor
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4116W FEATURES z Excellent hFE linearity. z High voltage and current. z Complementary to 2SA1586. z Small package. Pb Lead-free APPLICATIONS z SOT-323 NPN Silicon Epitaxial Planar Transistor.
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Original
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2SC4116W
2SA1586.
OT-323
BL/SSSTF038
TRANSISTOR BL 100
transistor marking LG
sot-323 Marking LG
2SC4116W
transistor marking code lg
LY SOT323
SOT 23 LY
transistor marking c rank Y
2SA1586
ly transistor
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PDF
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IrL 1540 N
Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784
Text: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure
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Original
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AN1784
SMA428A
SMA428A
IrL 1540 N
IrL 1520 N
IrL 1540 g
irl 1520
AN-1784
U 1560
AN1784
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PDF
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SMA428A
Abstract: AN-1619
Text: AN1619 APPLICATION NOTE AN LNA OPTIMIZED FOR INPUT/OUTPUT RETURN LOSS AT 1.85GHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for DCS Application f = 1.85 GHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.55
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Original
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AN1619
85GHz
SMA428A
SMA428A
AN-1619
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PDF
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an1721
Abstract: SMA428A SOT323-6 gp 940
Text: AN1721 APPLICATION NOTE AN LNA OPTIMIZED AT 900 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GSM Application f = 900 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA Noise Figure 1.4 dB Gain 25 dB RLin 8.5 dB RLout
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Original
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AN1721
SMA428A
SMA428A
an1721
SOT323-6
gp 940
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PDF
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BL 350-700
Abstract: KTA2014 KTC4075
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4075 SOT-323 TRANSISTOR NPN FEATURES 1. BASE 2. EMITTER z z z z 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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Original
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OT-323
KTC4075
OT-323
KTA2014
100mA,
BL 350-700
KTA2014
KTC4075
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PDF
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LG 2SC4116
Abstract: sot-323 Marking LG 2sc4116 2SA1586 marking LG SOT323
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR NPN FEATURES z High voltage and high current z Excellent hFE linearity z High hFE z Low noise z Complementary to 2SA1586 1. BASE 2. EMITTER
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Original
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OT-323
2SC4116
2SA1586
100mA
LG 2SC4116
sot-323 Marking LG
2sc4116
2SA1586
marking LG SOT323
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PDF
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sot-323 Marking LG
Abstract: LG 2SC4116 ly SOT-323 2SC4116
Text: 2SC4116 SOT-323 Transistor NPN SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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Original
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2SC4116
OT-323
OT-323
2SA1586
100mA
sot-323 Marking LG
LG 2SC4116
ly SOT-323
2SC4116
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC4116 TRANSISTOR NPN FEATURES z High voltage and high current z Excellent hFE linearity z High hFE z Low noise z Complementary to 2SA1586 1. BASE 2. EMITTER
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Original
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OT-323
2SC4116
2SA1586
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PC4081 NPN general purpose transistor Product specification Supersedes data of 1997 Jul 04 Philips Sem iconductors 1999 Apr 08 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor 2PC4081
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OCR Scan
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2PC4081
2PC4081
SC-70
2PA1576.
4081Q
4081S
115002/00/04/pp8
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PDF
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B1219
Abstract: AN 6752
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly 2PD1820A NPN general purpose transistor Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification 2PD1820A NPN general purpose transistor
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OCR Scan
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2PD1820A
2PD1820A
B1219A
115002/00/02/pp8
B1219
AN 6752
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT ly PMST5088; PMST5089 NPN general purpose transistors Product specification Supersedes data of 1997 May 22 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors
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OCR Scan
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PMST5088;
PMST5089
SC-70;
T5088
T5089
115002/00/03/pp8
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly PMST6428; PMST6429 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 12 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors
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OCR Scan
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PMST6428;
PMST6429
PMST6429
SC-70;
OT323
PMST6428
115002/00/03/pp8
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PDF
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marking code 4D
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC859W; BC860W PNP general purpose transistors
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OCR Scan
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BC859W;
BC860W
BC860W
BC850W
115002/00/04/pp8
marking code 4D
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PDF
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|
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T617
Abstract: No abstract text available
Text: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ZU M T717 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc CONTI.5A * * 3 A P eak P u ls e C u rre n t E x c e lle n t H pE C h a ra c te ris tic s U p T o 3 A (p u ls e d )
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OCR Scan
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Super323TM
OT323
150mQat
100MHz
ZUMT717
T617
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PDF
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t718
Abstract: t618
Text: Super323 SOT323 PNP SILICON POWER SWITCHING TRANSISTOR ISSU E 1 - SEPTEM BER 1998 ZUMT718 - FEATU RES 500mW POWER D ISSIPA TIO N * lc CONT 1A * * * * 3 A Peak Pu lse C u rren t Exce lle n t H FE C h a ra cte ristics U p T o 3 A (p u lsed )
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OCR Scan
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Super323TM
OT323
ZUMT718
500mW
200mQ
-10mA*
-100m
-100mA*
-50mA,
t718
t618
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ZUMT413 ISSU E 1 - DECEMBER 1998_ FEATU RES * A v a la n c h e m ode operation * 50 A Peak a v a la n ch e current * Lo w in d u ctan ce p a cka g in g A P P L IC A T IO N S * La se r LE D d rive rs
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OCR Scan
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OT323
ZUMT413
20MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e
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OCR Scan
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OT323
100jj
15KHz
ZUMT5179
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PDF
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Untitled
Abstract: No abstract text available
Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT619 IS S U E 1 - S E P T E M B E R FEATU RES 500mW POWER DISSIPATION * * * * lc CO N T 1A 2 A Peak P u lse C u rren t E x c e lle n t H FE C h a ra c te ristic s U p T o 2 A (p u lsed )
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OCR Scan
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Super323TM
OT323
ZUMT619
500mW
160mQ
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT618 ISSUE 1 - SEPTEMBER 1998_ F E A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.2 5 A * 3 A P eak P u ls e C u rre n t * E x c e lle n t H FE C h a ra c te ris tic s U p to 3 A (p u ls e d )
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OCR Scan
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Super323TM
OT323
ZUMT618
125mOat1
100MHz
100mA
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PDF
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ZUMT617
Abstract: No abstract text available
Text: Super323 SOT323 NPN SILICON POWER SWITCHING TRANSISTOR ZUMT617 ISSUE 1 - SEPTEMBER 1998 FE A TU R E S * 500m W POWER DISSIPATION * lc C O N T I.5 A * * 5 A P eak P u ls e C u rre n t E x c e lle n t H FE C h a ra c te ris tic s U p T o 5 A (p u ls e d )
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OCR Scan
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Super323TM
OT323
ZUMT617
135mO
100MHz
ZUMT617
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PDF
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M 4 3171 opto
Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
Text: MOTOROLA MBR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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OCR Scan
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MBR6535
MBR6545
MBR6545
DO-35
M 4 3171 opto
9571 gh
opto 3171
3171 opto
SOT223 6 pin
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PDF
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P381-A
Abstract: No abstract text available
Text: Who% H E W L E T T mirÆ P A C K A R D S u r f a c e M o u n t P IN D i o d e s in SO T-323 S C - 7 0 Technical Data H SM P-381A S eries H SM P-386A S eries H SM P-389A S eries Features Package Lead Code D escrip tion/A p p lications * D i o d e s O p t i m i z e d for:
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OCR Scan
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T-323
P-381A
P-386A
P-389A
SMP-381A
HSMP-386A
HSMP-389A
RS-481,
P381-A
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Jun 19 Philips Sem iconductors 1999 May 21 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43 FEATURES PINNING • High current max. 500 mA
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OCR Scan
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PMSTA42;
PMSTA43
PMSTA93.
STA42
STA43
MAM062
115002/00/02/pp8
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PDF
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