Untitled
Abstract: No abstract text available
Text: Extract from the online catalog RV 8-TP 2,4X0,8 L-WW(1X1) Order No.: 3191042 Marshalling distributor, Nom. voltage: 250 V, Nominal current: 5 A, AWG: 20 - 26, Connection type: Special and hybrid connection,
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LWW11
Abstract: No abstract text available
Text: Module no:3191042 LabelId:3191042 Operator:Phoenix 19:07:08, Donnerstag, 28. Juni 2001 RV 8-TP 2,4 0,8 L-WW (1 1) Element width 7.62 [mm] AWG Connection data WW connection TP connection I U [A] [V] 5* 250 1x1 26-20 5* 250 2.4 x 0.8 24-20 5* 250 * see load diagram
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TRANSISTOR AS3
Abstract: TRANSISTOR LWW 20 transistor code AS3 On semiconductor date Code sot-223 AS3 SOT223 as3 Transistor transistor code LWW FR4 GLASS EPOXY AS3 MARKING TRANSISTOR LWW 40
Text: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is
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BSP52T1
OT-223
BSP52T1
inch/1000
BSP62T1
TRANSISTOR AS3
TRANSISTOR LWW 20
transistor code AS3
On semiconductor date Code sot-223
AS3 SOT223
as3 Transistor
transistor code LWW
FR4 GLASS EPOXY
AS3 MARKING
TRANSISTOR LWW 40
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62514
Abstract: NIF62514
Text: NIF62514 Product Preview HDPlus N-Channel Self-protected Field Effect Transistors w/ Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area while incorporating smart
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NIF62514
r14525
NIF62514/D
62514
NIF62514
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3055l
Abstract: No abstract text available
Text: NTF3055L108 Preferred Device Power MOSFET 3.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 120 mW
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NTF3055L108
OT-223
3055L
NTF3055L108T1
NTF3055L108T1G
NTF3055L108T3
NTF3055L108T3G
NTF3055L108T3LF
NTF3055L108T3LFG
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5L175
Abstract: No abstract text available
Text: NTF3055L175 Preferred Device Power MOSFET 2.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 A, 60 V RDS on = 175 mW
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NTF3055L175
OT-223
NTF3055L175T1
NTF3055L175T1G
NTF3055L175T3
NTF3055L175T3G
NTF3055L175T3LF
NTF3055L175T3LFG
O-261)
5L175
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mosfet L 3055
Abstract: mj 3055 3055 l pd3055 3055 sot-223
Text: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW
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NTF3055-100
OT-223
mosfet L 3055
mj 3055
3055 l
pd3055
3055 sot-223
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NIF5002N
Abstract: NIF5002NT1 NIF5002NT3 NIF5002 NIF5002ND lww marking
Text: NIF5002N Preferred Device Advance Information Self−protected FET with Temperature and Current Limit HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while
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NIF5002N
NIF5002N/D
NIF5002N
NIF5002NT1
NIF5002NT3
NIF5002
NIF5002ND
lww marking
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gate to drain clamp
Abstract: TB 1225 EN NIF9N05CL NIF9N05CLT4
Text: NIF9N05CL Advance Information Power MOSFET 2.6 Amps, 52 Volts N-Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT-223 Package http://onsemi.com 2.6 AMPERES 52 V CLAMPED RDS on = 120 mW (Typ.) Benefits • High Energy Capability for Inductive Loads
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NIF9N05CL
OT-223
NIF9N05CL/D
gate to drain clamp
TB 1225 EN
NIF9N05CL
NIF9N05CLT4
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a2955
Abstract: 2955 mosfet 2955 SOT-223
Text: NTF2955 Power MOSFET −60 V, −2.6 A, Single P−Channel SOT−223 Features • TMOS7 Design for low RDS on • Withstands High Energy in Avalanche and Commutation Modes Applications • • • • Power Supplies PWM Motor Control Converters Power Management
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NTF2955
OT-223
OT-223
a2955
2955 mosfet
2955 SOT-223
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Untitled
Abstract: No abstract text available
Text: NIF62514 Preferred Device Self-protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while
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NIF62514
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NIF5003N
Abstract: NIF5003NT1 NIF5003NT3
Text: NIF5003N Preferred Device Advance Information Self−protected FET with Temperature and Current Limit HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while
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NIF5003N
NIF5003N/D
NIF5003N
NIF5003NT1
NIF5003NT3
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NIF62514
Abstract: NIF62514T1 NIF62514T3
Text: NIF62514 Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while
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NIF62514
NIF62514/D
NIF62514
NIF62514T1
NIF62514T3
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3055L
Abstract: No abstract text available
Text: NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES
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NTF3055L108
r14525
NTF3055L108/D
3055L
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Untitled
Abstract: No abstract text available
Text: NIF9N05CL Protected Power MOSFET 2.6 Amps, 52 Volts N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped
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NIF9N05CL
OT-223
NIF9N05CL/D
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5L175
Abstract: NTF3055L175 NTF3055L175T1 NTF3055L175T3 NTF3055L175T3LF
Text: NTF3055L175 Preferred Device Power MOSFET 2.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 AMPERES
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NTF3055L175
r14525
NTF3055L175/D
5L175
NTF3055L175
NTF3055L175T1
NTF3055L175T3
NTF3055L175T3LF
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3055 sot-223
Abstract: 3055 l NTF3055-100
Text: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES 60 VOLTS
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NTF3055-100
r14525
NTF3055
100/D
3055 sot-223
3055 l
NTF3055-100
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160T1
Abstract: 160T3 NTF3055-160
Text: NTF3055-160 Preferred Device Power MOSFET 2.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 AMPERES 60 VOLTS
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NTF3055-160
r14525
NTF3055
160/D
160T1
160T3
NTF3055-160
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3055 sot-223
Abstract: mosfet p 3055 MJ 3055 mosfet L 3055 3055 l
Text: NTF3055−100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 A, 60 V RDS on = 110 mW
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NTF3055-100
OT-223
NTF3055-100/D
3055 sot-223
mosfet p 3055
MJ 3055
mosfet L 3055
3055 l
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62514
Abstract: No abstract text available
Text: NIF62514 Preferred Device HDPlus N-Channel Self-protected Field Effect Transistors w/ Temperature and Current Limit http://onsemi.com HDPlus devices are an advanced series of power MOSFETs which utilize ON’s latest MOSFET technology process to achieve the lowest
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NIF62514
r14525
NIF62514/D
62514
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5L175
Abstract: NTF3055L175 NTF3055L175T1 NTF3055L175T3 NTF3055L175T3LF
Text: NTF3055L175 Preferred Device Power MOSFET 2.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 2.0 AMPERES
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NTF3055L175
r14525
NTF3055L175/D
5L175
NTF3055L175
NTF3055L175T1
NTF3055L175T3
NTF3055L175T3LF
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3055l
Abstract: f 3055l NTF3055L108 NTF3055L108T1 NTF3055L108T3 NTF3055L108T3LF
Text: NTF3055L108 Preferred Device Power MOSFET 3.0 Amps, 60 Volts, Logic Level N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES
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NTF3055L108
r14525
NTF3055L108/D
3055l
f 3055l
NTF3055L108
NTF3055L108T1
NTF3055L108T3
NTF3055L108T3LF
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3055 l
Abstract: 3055 sot-223 3055L
Text: NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N–Channel SOT–223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 3.0 AMPERES 60 VOLTS
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NTF3055-100
r14525
NTF3055
100/D
3055 l
3055 sot-223
3055L
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MA56
Abstract: 2SK321 2SK374 panasonic capacitor FL
Text: P A N A S O N IC I N D L /E L E K iS E M I } 7SC D | b T B 5 fl5 M D D C H b fla 2SK321 2SK321 '> ij zi > N f v N-Channel Junction /A w lt-iS it^ l^ iliffl/W id e -B a n d , Low-Noise Amplifier > ^ f fl/V id e o Camera • # • ^ ¡/F e a tu r e s A £ # l l : C is s * ' V J ' ? V ^ 0 / L o w
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2SK321
MA56
2SK321
2SK374
panasonic capacitor FL
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