LURG Search Results

IN4385

Abstract: IN4142 IN5060 in4140 IN2070 IN4720 IN4143 IN3193 in4001-in4007 in4722
Contextual Info: uvtriA vrtR SYSTEMS LTD 3f l E D • M T 7 7 Lm 3 □□OOOPg 5 ■ JSL r-o3-’ Axial Lead Silicon Rectifiers Meta lurgicaliy Bonded (DO-41 PACKAG E Case Material U/L 9 4V-0 Rated D IA . .1 0 7 ( 2 .7 ) .0 3 4 ( . 9 ) .0 2 8 ( . 7 ) .0 8 0 ( 2 .0 ) o ~ r

14DK471

Abstract: 07DK391 20dk431 SiC varistor 14DK431 sec 472 varistor varistor ve 17 varistor 471 14 10DK271 varistor 7 k 471
Contextual Info: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection, lurge protection in consumer electronics, lurge protection in industrial electronics. Jurge protection in communication, measuring and

Contextual Info: Bi-Color & Bi-Polar LEDs P a rt N um ber Shape LUGR59W 5mm Round LUYR59W LUGY59W I'T i LMRMG59W-CC V I*' LUGR59M LUGR59M-CA LUYR59M LUGY59M LMRMG59M-CC 8mm Round Em itting C olor Em itting M aterial Red Green Red Yellow Green Yellow Red Green Red Green Red

MI-50-150NM

Abstract: 5050S
Contextual Info: • Ä P ALUMINUM NITRIDE COAXIAL TERMINATIONS MI-50- 15S/ALN MI-50- 15SM/ALN MI-50- 50S/ALN MI-50- 50SM/ALN MI-50- 100S/ALN MI-50- 100S1VI/ALN MI-50- 150S/ALN MI-50 150SM/ALN MI-50 250S/ALN MI-50 250SM/ALN 15 15 50 50 100 100 150 150 250 250 12 12 6 6 3 3

Contextual Info: an A M P com pany GaAs Beam-Lead PIN Diodes MA4GP900 Series V 2.00 Case Style Features • Superior High Spued M icrow ave Switching Diode • 2-3 Nanosecond Sw itching W h e n D riven From T i l Logic • Capacitance as Low as 0.025 pF Specified at 10 G H z

957b

Abstract: ic 957B 1N9718 957B 62 964b
Contextual Info: 1 N 957B , thru 1 N 992B , -1 DO-35 Microsemi Corp. ' T h e àxxMs expert* S C O T T S D A L E , A7. For more informatkm caìl: 602 941-6300 FEATURES SIU C O N 500 mW ZENER DIO DES • 6.8 TO 200 V ZEN ER VOLTAGE RANGE • 1 N962B-1 THRU 1 N992B-I AVAILABLE IN JA N , JA N T X AND JA N T X V QUALIFICATIONS

1n3069

Contextual Info: i, Una. TELEPHONE: 973 376-2922 '(212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1 N3OB5, 1 N3111,1 N51 B2SERIES 15O Amp Avg Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics 1N3111 1N308S

Contextual Info: I Microjsemi Corp. f doctoexperts SANTA ANA, CA SCOTTSDALE, AZ 1N 962B thru 1N 973B D O -3 5 ☆ JA N S ? F o r m o r e in f o r m a ti o n call: 714 97 9-8220 SILICON 400 mW ZENER DIODES FEA TU R ES • 6.8 TO 200 V Z E N E R VOLTAG E R A NGE • A V A ILA B LE IN J A N , J A N T X AND JA N T X V AND JANS Q U A LIFIC A TIO N S

Contextual Info: 1N754A-1 thru 1N759A-1 DO-35 ☆JANS* Microsemi Corp. ' The diode experts SANTA A N A , CA SC O TTSD A LE, A Z For m ore inform ation call: 714 979-8220 SILICON 400 mW ZENER DIODES FEATURES • Z E N E R VOLTAGE 6.8 V to 12.0 V • A V A ILA B LE IN J A N . J A N T X . JA N T X V -1 AND JA N S Q UALIFICATIO NS TO M IL-S -19 5 0 0 /1Z7

1N740

Contextual Info: 1 N 7 5 9 A , -1 and 1 N 4 3 7 0 th ru 1 N 4 3 7 2 A , -1 D O -35 Mierosemi Corp. The diode experts SCO TTSD A LE, A Z For more information call: 602 941-6300 1% and 2% V E R S IO N S "C" and “D ” AVAILABLE SILICON 500 mW ZENER DIODES FEATURES • ZENER VOLTAGE 2.4V to 12.0V

Contextual Info: MOTOROLA ✓ SEMICONDUCTOR TECHNICAL DATA Advance Information Surface Mount Standard Recovery Power Rectifier MRA4007T3 SMA Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted Automotive application

Contextual Info: CAGE JACK PERFORMANCE DATA AVERAGE CAGE JACK 0.014 0,36 WIRE SIZE 28AWG CONTACT RESISTANCE AI1 ° C = A T RATED CURRENT A l 1° C = A T MAX. CURRENT CARRYING CAPACITY* At 30° C - AT 1.77 mfi 1.0 Amps. 7.3 Amps. WIRE RATING @ 710 CM PER AMP. AT AT WIRE RATING

led 3mm red

Abstract: 3MM LED RED "yellow led" 1.6mm
Contextual Info: VISIBLE LED LAMPS 3mm PCB indicators Page 1 of 1 Lxx362D series bi-level Package Features 2.9 ±0.5 4.32 Right angle, pcb mounting indicators 2.03 Bi-level 3mm LEDs 9.65 0.76 LED 1 LED 2 ø2.9 2.54 Coloured diffused lens 3.5 ±0.5 Rugged, black Nylon 6.6 housing, flame retardant

LUG32w

Abstract: LUR32D SLR343BDT3F 3MM LED RED LUG32C LUG32D LHR32D LHR33D LUO32D LUR32C
Contextual Info: OPTOELECTRONICS LEDs, 3mm STANDARD 3mm For suitable mountings see page 472 Case & Viewing Angle Emitted Colour Brightness Lens Colour Typ. Luminous Intensity IF = 20mA mcd Manf. Part No. & Order Code 2.6 14.6 10.4 12.6 LHR33D LUR33D LUY33D LUG33D Dimensions (mm)

Contextual Info: < £ 2 i L G S P ro d u c t S p e c ific a tio n Z8410/Z84C10 NMOS/CMOS Z80 DMA Direct Memory Access Controller FEATURES • Transfers, searches, and search/transfers in Byte-at-aTime, Burst, or Continuous modes. Cycle length and edge timing can be programmed to match the speed of

Contextual Info: CERAvtf/7Z" INTRODUCTION 100,000 PTCR TECHNOLOGY PTCR’s Positive Temperature Coefficient Resistors are made from high purity semi-conducting cer­ amics. Based on complex titanate chemical compositions (BaTiCb, SrTiCb, etc.), their specific perfor­ mance is created by the addition of dopants and unique processing, including high force pressing into

PE210

Abstract: 04XAA
Contextual Info: TISP4072F3, TISP4082F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 0 1997. Powar Innovations Limited, UK MARCH 18W- REV ISED SEPTEM BER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region D PACKAGE TOP V K W Precise and Stable Voltage

5mm LED projects

Abstract: lmr53de water level indicator mcd 5000 led blue 5mm LUR53D LUY53D LUGR59M LHR53D LUG53C LUG53D
Contextual Info: OPTOELECTRONICS LEDs, 5mm STANDARD For suitable mountings see page 472 5mm Case & Viewing Angle 35° Lens Colour Typ. Luminous Intensity IF = 20mA mcd Manf. Part No. & Order Code red-diffused red-diffused orange-diffused amber-diffused yellow-diffused green-diffused

Contextual Info: VISIBLE LED LAMPS 5mm PCB indicators Page 1 of 1 Lxx562D series bi-level Package 3.6 ±0.5 6.2 Features 11.1 LED 1 ø4.8 Right angle, pcb mounting indicators 12.4 6.3 LED 2 Bi-level 5mm LEDs CATHODE Coloured diffused lens 0.5 sq. 10.0 min. Solid state reliability

high voltage current mirror

Abstract: schematic diagram DC amplifier schematic diagram DC POWER SUPPLY LM3900N digital 5.1 amplifier diagram schematic LM3900 negative resistance amplifier LM3900N application note
Contextual Info: Sem iconductors National Sem iconductor Linear I. C . 's - Operational Amplifiers SC H E M A TIC A N D CONNECTION D IA G R A M Q u ad O perational A m plifier REFERENCE TA B LE Code S tock No. LM3900N quad am plifier 33139E D ual-In-Line-P ackage V+ 114 GENERAL DESCRIPTION

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

9B2B

Abstract: 1N9618 1N96B 1N96 1n zener
Contextual Info: 1 N 9 5 7 B, - / thru Micro/semi Corp. $ The O ’O d e expe rts ! SCOTTSDALE, A7. 1 N9 9 2 B , -1 DO-35 F o r m o re in fo rm a tio n cali: 6 0 2 9 4 1 -6 3 0 0 SILICON 500 mW ZENER DIODES FEATURES • 6.8 T O 200 V Z E N E R V O LT A G E R A N G E • 1N962B-1 TH R U 1N992B-1 A V A IL A B L E IN J A N , J A N T X A N D J A N T X V Q U A LIFIC A T IO N S

1S1618

Abstract: IN987B do-7 diode iss IN987 IN9778 ic 957B SJ 76 A DIODE EMI
Contextual Info: niCROSEMI CORP 25E D bllSäbS QGOQTbfl fl 1N957B thru 1N992B DO-7 emi Corp. Th§'0KX/^9M0trtS SCOTTSDALE, AZ SANTA ANA, CA For more information calk 602 941-6300 FEATURES T - t h t f SILICON 400 mW ZENER DIODES • 6.8 TO 200V ZENER VOLTAGE RANGE • 1N962B THRU 1N992B HAVE JAN, JANTX AND JANTXV QUALIFICATIONS

marking anw sot-23

Abstract: ANW SOT marking ANW 80URCE
Contextual Info: MOTOROLA O rder th is d o o u m tn t by MMBF0202PLT1/D SEMICONDUCTOR TECHNICAL DATA Green ' 9 / I i n e Low rDS on Small-Signal MOSFETb TMOSPSIngle P-Channel Field Effect Transistors Part of the GreenUne™ Portfolio of devices with energy-conserving traits.