u18 sensor hall
Abstract: hall sensor u18 marking eua EUA SMD MARKING PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2 u18 hall to-92 hall sensor J-STD-020A US1881 B102
Text: Features and Benefits n n n n n Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality and cost Applications n n n n n n Solid state switch
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US1881
-40oC
OT-23)
150oC
US1881
QS9000,
ISO14001
u18 sensor hall
hall sensor u18
marking eua
EUA SMD MARKING
PACKAGE T 4-LEAD SMD TOP VIEW VDD 1. GND 2
u18 hall
to-92 hall sensor
J-STD-020A
B102
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H1227
Abstract: No abstract text available
Text: r ' B a umH ︽川V p L U A H V T l J E R P E L a A R H U M w G H T R DATE CAP. ITEM CODE CAP * ￨ F ECQE121020FZI 0.001 (102) H121220FZI0.0012(122) H121520FZI0.0015(152) H121820FZI0.0018(182) H 122220 FZ 1 0.0022 (222) H122720 FZ 1 0.0027 (272) H123320 FZ 1 0.0033 (332)
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ECQE121020FZI
H121220FZI0
H121520FZI0
H121820FZI0
H122720
H123320
H123920FZI
H125620
M126820
M128220
H1227
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2N3904 Transistors
Abstract: 772G lingsen 2N3904 W83772G LUA* MARKING winbond io 772W
Text: W83772G Winbond H/W Monitoring IC Date: 05/22/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Winbond internal use only 3 08/25/05 0.31 For Winbond internal use only
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W83772G
W83772G
W83L772G
W83772G.
2N3904 Transistors
772G
lingsen
2N3904
LUA* MARKING
winbond io
772W
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Untitled
Abstract: No abstract text available
Text: W83772G Nuvoton H/W Monitoring IC Date: 05/22/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Nuvoton internal use only 3 08/25/05 0.31 For Nuvoton internal use only
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W83772G
W83772G
W83L772G
W83772G.
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Untitled
Abstract: No abstract text available
Text: W83772G Winbond H/W Monitoring IC Date: 04/27/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Winbond internal use only 3 08/25/05 0.31 For Winbond internal use only
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W83772G
W83772G
W83L772G
W83772G.
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2N3904 Transistors
Abstract: W83L772G 772W thermal diode
Text: W83772G Winbond H/W Monitoring IC Date: 05/22/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Winbond internal use only 3 08/25/05 0.31 For Winbond internal use only
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W83772G
W83772G
W83L772G
W83772G.
2N3904 Transistors
772W
thermal diode
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AT513
Abstract: AT4149 AT4156 pc 187 AT406
Text: rîTTTTl SERIES P TOGGLES & STANDARD SIZE/1-2 POÜË TYPICAL SWITCH ORDERING EXAMPLES P 20 11 12 13 21 22 23 POLES SPST SPDT SPDT DPST DPDT DPDT 12 & C IRCUITS ON NONE NONE ON ON OFF ON NONE ON NONE ON OFF TERMINALS NO CODE Solder Lua P Straiaht PC Z .187" Quick
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w/12mm
ROCKER138
AT4150
AT4151
P2012N-DC
P2011
P2021
P2023
AT513
AT4149
AT4156
pc 187
AT406
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Untitled
Abstract: No abstract text available
Text: TC4SU69F TOSHIBA C MOS DIGITAL INTEGRATED C IR C U IT SILICO N M O NOLITHIC INVERTER GATE Unit in ran The TC4SU69F is a single Inverter. + 0.2 1.6 - 0 .1 Therefore, this Is suitable for applications of CR oscillator □ 1.9 ± 0 .2 0.95 addition to inverters.
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TC4SU69F
TC4SU69F
Ta-25
C/10se18
Ta-25`
CL-50pF)
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Untitled
Abstract: No abstract text available
Text: TC4SU69F TO SHIBA C MOS DIGITAL INTEGRATED C IR C U IT SILICON M O NO LITHIC INVERTER GATE Unit in mm The TC4SU69F is a single inverter. Therefore, this is suitable for applications of CR oscillator circuits, crystal oscillator circuits and linear amplifiers in
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TC4SU69F
TC4SU69F
Ta-25
CL-50pF)
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Untitled
Abstract: No abstract text available
Text: TC4S11F T O SHIBA C MOS DIGITAL INTEGRATED C IR C U IT SILICO N M O NO LITHIC 2 INPUT NAND GATE Unit in mm The TC4S11F is 2-input positive logic NAND gates. Gate output with inverter buffer improves the input-output ch aracteristics and if the load capacitance increases, it can stop any changes
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TC4S11F
TC4S11F
Ta-25Â
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2N6137
Abstract: 2N6138 2N6116 J1026 2N6117 2N6118 "Programmable Unijunction Transistor" 2N6118 JAN JAN 2N6137 2N6116 JANTX
Text: INCH-PÙUNDI MIL-S-19500/493A ER 30 MARCH 1990 SUPERSEDING- MIL-S-19500/493(EL) 22 January 1974 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, PNPN, THYRISTOR, SILICON, (PROGRAMMABLE UNIJUNCTION TRANSISTOR), TYPES: 2N6116, 2N6117, 2N6118, 2N6137, 2N6138, JAN, JANTX, AND JANTXV
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MIL-S-19500/493A
MIL-S-19500/493
2N6116,
2N6117,
2N6118,
2N6137,
2N6138,
MIL-S-19500.
T0-18)
2N6137
2N6138
2N6116
J1026
2N6117
2N6118
"Programmable Unijunction Transistor"
2N6118 JAN
JAN 2N6137
2N6116 JANTX
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Untitled
Abstract: No abstract text available
Text: FJ596S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA SI N-CHANNEL JUNCTION FEl CAPACITOR MICROPHONE APPLICATIONS Package; SOT-23 * Especially Suited For Use In Audio telephone Capacitor Microphones * Excellent Voltage Characteristic * Excellent Transient Characteristic
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FJ596S
OT-23
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Untitled
Abstract: No abstract text available
Text: m m m Chataworth, CA m Micmsemi UF4001GP THRU UF4007GP Prog ress P ow ered b y Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 1 Amp Glass Passivated Ultra Fast Recovery Rectifier 50 to 1000 Volts Features • •
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UF4001GP
UF4007GP
UF4002GP
UF4003GP
UF4001GP
20/100ns/cm
G0DM357
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Untitled
Abstract: No abstract text available
Text: • m m Chattworth, CA m M icm sem i Progress Powered by Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 2 Amp Silicon Rectifier 50 to 1000 Volts Low Cost Low Leakage Low Forward Voltage Drop
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DO-15
RL201
RL202
RL203
RL204
RL205
RL206
RL207
RL201
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k1v10
Abstract: No abstract text available
Text: SIDAC: K1V10/K1V11/K1V12 Absolute M axim um Ratings a SÛT? a Item k m # 4 C ond itions S ym bol » Jp-fô « Ratings Unit U tfM M T stg - 40 ~ 125 °C 'o'B$ Tj 125 °c V drm 90 V T/= 112°C, 50Hz sine wave =180° 1 A Tj = 25°C, 50Hz sine wave ( 6 = 180°)
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K1V10/K1V11/K1V12
K1V10
K1V11
K1V12
k1v10
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k1v4
Abstract: k1v16 SIDAC K1V k1v14 K1V6
Text: SIDAC: K1V14/K1V16 A b s o lu te M a x im u m R a tin g s a Storage Temperature T s tg - 40 ~ 125 °C Tj 125 °c drm 115 V V ^ IEsit RMS On-state Current t yWtfi Surge On-state Current j^y\/7s it Repetitive Peak On-state Current Critical Rate of Rise of On-state Current
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K1V14/K1V16
K1V16
k1v4
SIDAC K1V
k1v14
K1V6
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948 LG DIODE
Abstract: No abstract text available
Text: 2SD1472 Silicon NPN Epitaxial, Darlington HITACHI Application Low frequency power amplifier Outline UPAK 2 O 1 o1. 2. 3. 4. 948 Base Collector Emitter Collector Flange C — W v- 2kn (Typ) -VvV 0.5 kn (Typ) 2SD1472 Absolute Maximum Ratings (Ta = 25°C) Item
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2SD1472
948 LG DIODE
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Untitled
Abstract: No abstract text available
Text: • ■ ■ Châttworth, C A m M ic m s e m i Progress Powered by Technology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • • For Surface Mount Applications Extremely Low Thermal Resistance Easy Pick And Place
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Untitled
Abstract: No abstract text available
Text: TC4S69F TOSHIBA C MOS DIGITAL INTEGRATED C IR C U IT SILICON M O NO LITHIC INVERTER GATE Unit in mm + 0.2 2.8-0.3 The TC4S69F is a three stage Inverter. + 0.2 1. 6 - 0.1 The output is provided with a buffer, so the input/output voltage characteristic has been, improved. Therefore, an
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TC4S69F
TC4S69F
Ta-25Â
CL-50pF)
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TC4811F
Abstract: No abstract text available
Text: T O S H IB A C M O S D IG IT A L IN T E G R A T E D C IR C U IT I I " S IL IC O N M O N O L IT H IC • W 2 INPUT NAND GATE 2.8 - 0 . 3 -rO.2 1. 6 - 0.1 3 DC Supply Voltage - e SYMBOL RATING VDD VSS-0.5-VSS+20 V V VIN Vss-0-5-Vd d +O.5 Output Voltage VOUT
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TC4811F
Ta-25
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"Solid State Scientific"
Abstract: DoD-STD-100 LAVT 4042B
Text: r This Material Copyrighted By Its Respective Manufacturer _i 1. _ SCOPE 1.1 Scope. T h is drawing d e sc rib e s the requirem ents fo r m o n o lithic s i l i c o n , CMOS, Quad D Latch
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DoD-STD-100
5962-E639
8s3/4o42bc
"Solid State Scientific"
DoD-STD-100
LAVT
4042B
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Untitled
Abstract: No abstract text available
Text: s M T BH BT g » > 8 M'^ÉESSïliB V'5 1 Dry Circuit Sw itches i » V C N % T < V . Designed for PC Board Applications 1. Terminal pitches are all in inch size multiples of 2.54 mm . S T t 0'y ^ « ^ T Y > f L-y-'rX(2.54m m )T'r„
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IRC830
Abstract: AL 1450 DV
Text: P D -9.455D International i«R Rectifier IRC830 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 5 0 0 V R DS on = 1 -5 ^ l D = 4 .5 A
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IRC830
IRC830
AL 1450 DV
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SH EET REV SH EET REV STATUS OF SH EETS REV SH EET PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A 1 2 4
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5962-8862401JX
CD54HCT4059F/3A
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