LTS 543 R Search Results

2N6794

Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Contextual Info: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds

Contextual Info: AVANTEK INC H4E D B llM Mt b- '0005005 0 B A V A UTO/UTC/PPA 543 Series Thin-Film Cascadabie Amplifier _ - , r _ 10 to 500 MHz Æ ^ & N T i l i C APPLICATIONS FEATURES • System Front Ends • IF/RF Amplification ; • Surface Mount Assembly • •

Contextual Info: I n ter n a tio n a l MB2505 S e m ic o n d u c to r , I n c , thru MB2510 HIGH CURRENT SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 25.0 Amperes FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Case insulation greater than 2000 volts

motorola "Linear Voltage Regulators"

Abstract: MCC7705C MCC7700 MC1741C MC1741CP1 MCC1741C
Contextual Info: LIN E A R IN TEG RA TED C IR C U IT CHIPS G E N E R A L D E S C R IP T IO N M otorola now offers a very broad selection of linear integrated circuit chips. Am ong the types o f circuits which compose the linear fam ily there are: A. Operational Am plifiers

RF540

Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Contextual Info: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q

GE2 TRANSISTOR

Abstract: CM50DY-12E BP107
Contextual Info: bME D m 72T4L21 Ü00b712 fl34 « P R X m CM50DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POIÜEREX INC S O T ÌG S M o d u l ò

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

30n60b

Abstract: B2045
Contextual Info: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

3b29

Abstract: 3B24W United Electronics 3824WA 371B 576A 217C 300G 705WA 3B-24
Contextual Info: Engineering Data and Ratings I f 1? CLIPPER DIODE-RECTIFIER TUBES high vacuum . . . HIGH VOLTAGE i n t e r n a l anude ty p e s A ll of the h a lf-w a v e re ctifie r an d c lip p e r d io des d e scrib e d herein em p lo y an o d es of sp e c ia lly processed

26N500

Abstract: DIXYS
Contextual Info: n ï Y V Q wnm 1 A . X u Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q DS on Q C la ss = 500 V = 26 A = 0.20 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQg, High dv/dt Symbol TestConditions Maximum Ratings

IRF9640

Abstract: transistor IRF9640 IRF9641 IRF9642 irf9640 mosfet IRF9643 f9640
Contextual Info: Rugged Power MOSFETs File Number IRF9640, IRF9641 IRF9642, IRF9643 2284 Avalanche-Energy-Rated P-Channel Power MOSFETs -9 A and -11 A, -150 V and -200 rosiom = 0.5 Q and 0.7 fi Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d

Contextual Info: 5.0 KiloWatt 5KW iiliitl! REVERSE M A X IM U M M A X IM U M S T A N D - C L A M P IN G R EVER SE O FF VO LTA G E LEA K A G E B R EA KD O W N VO LTA G E VO LTAGE M {n v., iitiSis;: v»< V , V e ils (V o lts ) (V o lts ) P A R T n u m b e r RANSIENT VOLTAGE SUPPRESSORS - BIPOLAR

lts 542 pin diagram

Abstract: pin diagram of LTS 542 lts 542 diagram LTS 542 INTERNAL DIAGRAM pin diagram of lts 543 lts 542
Contextual Info: Am2847•Am2896 Quad 80-Bit and Quad 96-Bit Static Shift Registers Distinctive Characteristics • Plug-in replacement fo r 2532B, TMS3120, TMS3409, MK1007, 3347 • Internal recirculates on each register • Single T T L compatible clock • Outputs sink tw o T TL loads

mosfet 2n6788

Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Contextual Info: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds

2N6901

Abstract: mosfet 2n6788 2N6802 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500
Contextual Info: Standard Power MOSFETs 2N6802 File Number 1905 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V r D S o n —"1.50 N-CHANNEL ENHANCEMENT MODE o Features: • m ■ ■ ■ SOA is power-dissipation limited

2N6784

Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds

lts 542

Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
Contextual Info: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds

Contextual Info: I n ter n a t/ onal S e m ic o n d u c t o r I n c . 1N5728B thru 1N5757B 400 M ILLIW ATT H ER M ETIC ALLY SEALED G LASS SILICON ZENER DIODES M A X IM U M R A TIN G S Junct i on Temperat ure: Storage Temperature: DC Power Dissipation: Power Derating: Forward Vol tage

Contextual Info: □ IXYS HiPerFET IXFJ 13N50 V DSS Power MOSFETs ^D cont D DS(on) N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol t rr Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 Mß 500 V V GS Continuous ±20 V VGSM Transient

CA2812

Contextual Info: MOTOROLA • S E M IC O N D U C T O R TECHNICAL DATA CA2812 CA2812H The RF Line W id e b a n d L in e a r A m p lif ie r s . . d e sign e d for am plifier ap p lications in 50 to 100 o h m sy st e m s requiring w ide bandw idth, lo w n oise and low distortion. T h is hybrid p ro vid es excellent gain stability

Contextual Info: HAK 1 5 IH? 19-1972; R e v 1; 10/92 CMOS, 12-Bit, Serial-input M ultiplying DAC G e n e ra l D e s c rip tio n The M A X 543 c o n ta in s a 12 -b it R-2R ty p e D A C , a s eria l-in p a ra lle l-o u t s h ift re g is te r, a D A C re g is te r a n d c o n tro l

TMS3409

Abstract: 2532B AM2847DC AM2847DM AM2847PC AM2896DC AM2896DM AM2896PC MK1007 TMS3120
Contextual Info: A m 2 8 4 7 • A m 2 8 9 6 Quad 80-Bit and Quad 96-Bit Static Shift Registers Distinctive Characteristics • Plug-in replacement fo r 2532B, T M S 3 120, T M S 340 9, M K 1007, 3347 • Internal recirculates on each register • Single T T L com patible clock

mosfet j122

Abstract: j122 mosfet transistor j122 J122 j122 transistor J120 MOSFET IRFJ120 2s j122 IRF 543 MOSFET IRFJ121
Contextual Info: H E D I MflSSMSE 00 0^ 53 0 ^ | Data Sheet No. PD-9.401A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IRFJ120 HEXFET TRANSISTORS 0 „ N-CHANNEL POW ER M O SFETs a i TO R IRFJ121 IRFJ122 p ji IRFJ123 Features: 100 Volt, 0.3 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: 5.0 KiloWatt TRANSIENT VOLTAGE SUPPRESSORS REVERSE STAND OFF VOLTAGE BREAKDOWN VOLTAGE P A RT NUMBER V . V o lts (Volts) (Volts) 5 K P 5.0 SXPS.CA 5 KPS, 9 5K P6 0A 5.0 5.0 6.0 6.0 6.40 6.40 6.67 6.67 5K P S .9 SKPfr.-SA 5K P T 0 5K P7 0A 6.5 6.5 7.0 7.0