LTS 543 IC Search Results

Contextual Info: I n ter n a tio n a l MB2505 S e m ic o n d u c to r , I n c , thru MB2510 HIGH CURRENT SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 25.0 Amperes FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Case insulation greater than 2000 volts

Contextual Info: BR2505 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD. BR2510 T E C H N IC A L S P E C IF IC A T IO N S O F S IN G L E -P H A S E S IL IC O N B R ID G E R E C T IF IE R VOLTAGE RANGE - 5 0 to 1000 Volts CURRENT - 25 Amperes FEATURES

LTS 543 R

Abstract: LTS 543 lts 543 ic opti 85c
Contextual Info: 0A V A N T E K UTO/UTC/PPA 543 Series Thin-Film Cascadable Amplifier 10 to 500 MHz FEATURES APPLICATIONS • • • • • System Front Ends • IF/RF Amplification • Surface Mount Assembly Frequency Range: 10 to 500 MHz High Dynamic Range Low Noise Figure: 2.5 dB

Contextual Info: Mh SANTA ANA, CA SCOTTSDALE, AZ For more information a ll; 6 0 2 9 4 1 -6 3 0 0 FE A T U R E S • D ES IG N ED TD P R O T EC T BIPO LA R A N D M OS M ICR OPR O CESSO R BASED S Y S T E M S . 1N 6356 thru 1N 6372 and MPT-5 thru MPT-45C TRANSIENT ABSORPTION ZENER

Contextual Info: AVANTEK INC H4E D B llM Mt b- '0005005 0 B A V A UTO/UTC/PPA 543 Series Thin-Film Cascadabie Amplifier _ - , r _ 10 to 500 MHz Æ ^ & N T i l i C APPLICATIONS FEATURES • System Front Ends • IF/RF Amplification ; • Surface Mount Assembly • •

motorola "Linear Voltage Regulators"

Abstract: MCC7705C MCC7700 MC1741C MC1741CP1 MCC1741C
Contextual Info: LIN E A R IN TEG RA TED C IR C U IT CHIPS G E N E R A L D E S C R IP T IO N M otorola now offers a very broad selection of linear integrated circuit chips. Am ong the types o f circuits which compose the linear fam ily there are: A. Operational Am plifiers

RF540

Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Contextual Info: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q

2N6784

Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Contextual Info: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds

GE2 TRANSISTOR

Abstract: CM50DY-12E BP107
Contextual Info: bME D m 72T4L21 Ü00b712 fl34 « P R X m CM50DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POIÜEREX INC S O T ÌG S M o d u l ò

j 692

Abstract: MB1505F MB1505FW MB151F MB151FW MB152FW MB154FW MB156F MB158F
Contextual Info: BRIDGE RECTIFIERS, Fast R ecovery, P la stic Package v ^ î/ïS Â : P a ri Nuwber Maximum A verage R e c tif ie d C u r r e n t a t T. tA m p » T J C| MB15Ö5F MB151F MB1MF MB154F MB156F MB158F M81510F 55 Peak I n v it a V o lt JB P e ak F o rw a rd S u rg e C u rre n t

lts 542

Abstract: UFN540 FN640
Contextual Info: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.

30n60b

Abstract: B2045
Contextual Info: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

Contextual Info: I n ter n a t/ onal S e m ic o n d u c t o r I n c . 1N5728B thru 1N5757B 400 M ILLIW ATT H ER M ETIC ALLY SEALED G LASS SILICON ZENER DIODES M A X IM U M R A TIN G S Junct i on Temperat ure: Storage Temperature: DC Power Dissipation: Power Derating: Forward Vol tage

3b29

Abstract: 3B24W United Electronics 3824WA 371B 576A 217C 300G 705WA 3B-24
Contextual Info: Engineering Data and Ratings I f 1? CLIPPER DIODE-RECTIFIER TUBES high vacuum . . . HIGH VOLTAGE i n t e r n a l anude ty p e s A ll of the h a lf-w a v e re ctifie r an d c lip p e r d io des d e scrib e d herein em p lo y an o d es of sp e c ia lly processed

CA2812

Contextual Info: MOTOROLA • S E M IC O N D U C T O R TECHNICAL DATA CA2812 CA2812H The RF Line W id e b a n d L in e a r A m p lif ie r s . . d e sign e d for am plifier ap p lications in 50 to 100 o h m sy st e m s requiring w ide bandw idth, lo w n oise and low distortion. T h is hybrid p ro vid es excellent gain stability

SSS50N06

Abstract: AGSA 50 250M SSS50N05
Contextual Info: N-CHANNEL POWER MOSFETS SSS50N06/05 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

vogt 543 80 001 00

Abstract: vogt 543 pt-5001 T60403-L4021-X066 vogt -t3 T60403-L4025-X021 t60403-l4097 vogt transformer 543 l4097 T2084
Contextual Info: ICs for Communications Quadruple Transceiver for S/T Interface QUAT-S PEB 2084 Version 1.2 Data Sheet 07.95 T2084-V12-D1-7600 Ausgabe 07.95 Herausgegeben von Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995.

vogt 543

Abstract: pt-5001 T60403-L4097-X029 PT5069 vac l4097-x029 pt 5069 vac x021 X021 vogt -sumida-57016270 1H vogt transformer 543
Contextual Info: ICs for Communications Quadruple Transceiver for S/T Interface QUAT-S PEB 2084 Version 1.2 Data Sheet 07.95 T2084-V12-D1-7600 Ausgabe 07.95 Herausgegeben von Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995.

lts 542 pin diagram

Abstract: pin diagram of LTS 542 lts 542 diagram LTS 542 INTERNAL DIAGRAM pin diagram of lts 543 lts 542
Contextual Info: Am2847•Am2896 Quad 80-Bit and Quad 96-Bit Static Shift Registers Distinctive Characteristics • Plug-in replacement fo r 2532B, TMS3120, TMS3409, MK1007, 3347 • Internal recirculates on each register • Single T T L compatible clock • Outputs sink tw o T TL loads

Contextual Info: • Micmsemi m m Chatsworth, CA m MB2505 THRU MB2510 Prog ress P ow ered b y Technology 9261 Owensmouth Ave, Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 25 Amp Single Phase Bridge Rectifier 50 to 1000 Volts Mounting Hole For #8 Screw

mosfet 2n6788

Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Contextual Info: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds

LTS 542

Abstract: RDE 1000 capacitor
Contextual Info: Q UTO/UTC 443 Series Thin-Film Cascadable Amplifier 10 to 400 MHz avan tek FEATURES APPLICATIONS • • • • • • IF/RF Amplification • Low Power Systems Frequency Range: 10 to 400 MHz Low Current Drain: 10 mA Typ Output Power: +5.5 dBm (Typ) 5 Volt Supply

Sharp IXD 067

Abstract: IXD 067 LH0080A LH0080A SHARP Z80B-CPU sharp z80 Sharp LH0080A LH0080 Z80E Z80B
Contextual Info: LH0080 Z80 CPU Central Processing Unit LH0080 • Z80 CPU Central Processing Unit Description Pin Connections The L H 0 0 8 0 Z 8 0 CPU Z 80 CPU for sh ort be­ low is a g e n e r a l-p u r p o se 8 - b i t m icrop rocessor fabricated usin g an N -chan nel silic o n -g a te process.

Contextual Info: I nternational 5KP5.0 thru S em ico nducto r , I nc . TRANSIENT VOLTAGE SUPPRESSORS 5KP110A UNI-POLAR 5.0 to 110 VO LTS 5000 WATT PEAK POWER :o 5.0 WATT STEADY STATE .340/. 360 SYMBOL Peak Power Dissipation at TA= 2 5 ° C , Tp= 1ms N o te 1 Steady State Power Dissipation at TL= 7 5 ° C