vogt 543 80 001 00
Abstract: vogt 543 pt-5001 T60403-L4021-X066 vogt -t3 T60403-L4025-X021 t60403-l4097 vogt transformer 543 l4097 T2084
Text: ICs for Communications Quadruple Transceiver for S/T Interface QUAT-S PEB 2084 Version 1.2 Data Sheet 07.95 T2084-V12-D1-7600 Ausgabe 07.95 Herausgegeben von Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995.
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T2084-V12-D1-7600
PE-68975*
PE-64995
PE-65495
PE-65795
PE-68995
B78384-A1060-A2*
B78384-P1111-A2
T60403-L4025-X021*
T60403-L4097-X011*
vogt 543 80 001 00
vogt 543
pt-5001
T60403-L4021-X066
vogt -t3
T60403-L4025-X021
t60403-l4097
vogt transformer 543
l4097
T2084
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vogt 543
Abstract: pt-5001 T60403-L4097-X029 PT5069 vac l4097-x029 pt 5069 vac x021 X021 vogt -sumida-57016270 1H vogt transformer 543
Text: ICs for Communications Quadruple Transceiver for S/T Interface QUAT-S PEB 2084 Version 1.2 Data Sheet 07.95 T2084-V12-D1-7600 Ausgabe 07.95 Herausgegeben von Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995.
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T2084-V12-D1-7600
PE-68975*
PE-64995
PE-65495
PE-65795
PE-68995
B78384-A1060-A2*
B78384-P1111-A2
T60403-L4025-X021*
T60403-L4097-X011*
vogt 543
pt-5001
T60403-L4097-X029
PT5069
vac l4097-x029
pt 5069
vac x021
X021
vogt -sumida-57016270 1H
vogt transformer 543
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Untitled
Abstract: No abstract text available
Text: I n ter n a tio n a l MB2505 S e m ic o n d u c to r , I n c , thru MB2510 HIGH CURRENT SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 25.0 Amperes FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Case insulation greater than 2000 volts
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MB2505
MB2510
673hru
MB2510
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Untitled
Abstract: No abstract text available
Text: BR2505 THRU SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD. BR2510 T E C H N IC A L S P E C IF IC A T IO N S O F S IN G L E -P H A S E S IL IC O N B R ID G E R E C T IF IE R VOLTAGE RANGE - 5 0 to 1000 Volts CURRENT - 25 Amperes FEATURES
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BR2505
BR2510
ratings-400
IL-STD-202E,
BR2505
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LTS 543 R
Abstract: LTS 543 lts 543 ic opti 85c
Text: 0A V A N T E K UTO/UTC/PPA 543 Series Thin-Film Cascadable Amplifier 10 to 500 MHz FEATURES APPLICATIONS • • • • • System Front Ends • IF/RF Amplification • Surface Mount Assembly Frequency Range: 10 to 500 MHz High Dynamic Range Low Noise Figure: 2.5 dB
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Untitled
Abstract: No abstract text available
Text: Mh SANTA ANA, CA SCOTTSDALE, AZ For more information a ll; 6 0 2 9 4 1 -6 3 0 0 FE A T U R E S • D ES IG N ED TD P R O T EC T BIPO LA R A N D M OS M ICR OPR O CESSO R BASED S Y S T E M S . 1N 6356 thru 1N 6372 and MPT-5 thru MPT-45C TRANSIENT ABSORPTION ZENER
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MPT-45C
12seconds
1N6356-1N6364)
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC H4E D B llM Mt b- '0005005 0 B A V A UTO/UTC/PPA 543 Series Thin-Film Cascadabie Amplifier _ - , r _ 10 to 500 MHz Æ ^ & N T i l i C APPLICATIONS FEATURES • System Front Ends • IF/RF Amplification ; • Surface Mount Assembly • •
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motorola "Linear Voltage Regulators"
Abstract: MCC7705C MCC7700 MC1741C MC1741CP1 MCC1741C
Text: LIN E A R IN TEG RA TED C IR C U IT CHIPS G E N E R A L D E S C R IP T IO N M otorola now offers a very broad selection of linear integrated circuit chips. Am ong the types o f circuits which compose the linear fam ily there are: A. Operational Am plifiers
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MCC5538/MCC5539/MCC7538/MCC7539
48x60
MCC5538/MCC7538
MCC5539/MCC7539.
MCC7700
MCC7705C
MCC7706C
MCC7708C
MCC7712C
MCC7715C
motorola "Linear Voltage Regulators"
MC1741C
MC1741CP1
MCC1741C
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RF540
Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Text: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q
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540/FI-541/FI
542/FI-543/FI
IRF540
IRF540FI
IRF541
IRF541FI
IRF542
IRF542FI
IRF543
IRF543FI
RF540
b17a
q02c
IRF540 application
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2N6784
Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Text: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds
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2N6784
2N6784
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
2sC 1906 transistor
2N6784 JANTX
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GE2 TRANSISTOR
Abstract: CM50DY-12E BP107
Text: bME D m 72T4L21 Ü00b712 fl34 « P R X m CM50DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POIÜEREX INC S O T ÌG S M o d u l ò
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7ET4L21
00b712
CM50DY-12E
BP107,
Amperes/600
CM50DY-12E
GE2 TRANSISTOR
BP107
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j 692
Abstract: MB1505F MB1505FW MB151F MB151FW MB152FW MB154FW MB156F MB158F
Text: BRIDGE RECTIFIERS, Fast R ecovery, P la stic Package v ^ î/ïS Â : P a ri Nuwber Maximum A verage R e c tif ie d C u r r e n t a t T. tA m p » T J C| MB15Ö5F MB151F MB1MF MB154F MB156F MB158F M81510F 55 Peak I n v it a V o lt JB P e ak F o rw a rd S u rg e C u rre n t
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MB1505F
MB151F
MB156F
MB158F
M81510F
MB1505FW
MB151FW
MB152FW
MB154FW
MB156FW
j 692
MB1505F
MB151F
MB156F
MB158F
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lts 542
Abstract: UFN540 FN640
Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.
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UFN540
UFN541
UFN542
UFN543
lts 542
UFN540
FN640
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30n60b
Abstract: B2045
Text: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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30N60B
30N60C
30n60b
B2045
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3b29
Abstract: 3B24W United Electronics 3824WA 371B 576A 217C 300G 705WA 3B-24
Text: Engineering Data and Ratings I f 1? CLIPPER DIODE-RECTIFIER TUBES high vacuum . . . HIGH VOLTAGE i n t e r n a l anude ty p e s A ll of the h a lf-w a v e re ctifie r an d c lip p e r d io des d e scrib e d herein em p lo y an o d es of sp e c ia lly processed
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062MAX--J
705WA
3b29
3B24W
United Electronics
3824WA
371B
576A
217C
300G
705WA
3B-24
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26N500
Abstract: DIXYS
Text: n ï Y V Q wnm 1 A . X u Advanced Technical Information HiPerFET Power MOSFETs IXFH 26N50Q IXFT 26N50Q DS on Q C la ss = 500 V = 26 A = 0.20 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQg, High dv/dt Symbol TestConditions Maximum Ratings
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26N50Q
26N50Q
O-268
26N500
DIXYS
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CA2812
Abstract: No abstract text available
Text: MOTOROLA • S E M IC O N D U C T O R TECHNICAL DATA CA2812 CA2812H The RF Line W id e b a n d L in e a r A m p lif ie r s . . d e sign e d for am plifier ap p lications in 50 to 100 o h m sy st e m s requiring w ide bandw idth, lo w n oise and low distortion. T h is hybrid p ro vid es excellent gain stability
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CA2812
CA2812H
-32dB
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SSS50N06
Abstract: AGSA 50 250M SSS50N05
Text: N-CHANNEL POWER MOSFETS SSS50N06/05 FEATURES • Extremely Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability
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SSS50N06/05
O-220
SSS50N06
SSS50N05
O-220F
AGSA 50
250M
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lts 542 pin diagram
Abstract: pin diagram of LTS 542 lts 542 diagram LTS 542 INTERNAL DIAGRAM pin diagram of lts 543 lts 542
Text: Am2847•Am2896 Quad 80-Bit and Quad 96-Bit Static Shift Registers Distinctive Characteristics • Plug-in replacement fo r 2532B, TMS3120, TMS3409, MK1007, 3347 • Internal recirculates on each register • Single T T L compatible clock • Outputs sink tw o T TL loads
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Am2847·
Am2896
80-Bit
96-Bit
2532B,
TMS3120,
TMS3409,
MK1007,
80-and
Am2847
lts 542 pin diagram
pin diagram of LTS 542
lts 542 diagram
LTS 542 INTERNAL DIAGRAM
pin diagram of lts 543
lts 542
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Untitled
Abstract: No abstract text available
Text: • Micmsemi m m Chatsworth, CA m MB2505 THRU MB2510 Prog ress P ow ered b y Technology 9261 Owensmouth Ave, Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • • • 25 Amp Single Phase Bridge Rectifier 50 to 1000 Volts Mounting Hole For #8 Screw
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MB2505
MB2510
MB-35
MB251
MB252
MB254
MB256
MB258
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mosfet 2n6788
Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Text: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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2N6788
2N6788
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
mosfet 2n6788
LH0063
QPL-19500
2N6792 JANTXV
2N6788 JANTXV
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LTS 542
Abstract: RDE 1000 capacitor
Text: Q UTO/UTC 443 Series Thin-Film Cascadable Amplifier 10 to 400 MHz avan tek FEATURES APPLICATIONS • • • • • • IF/RF Amplification • Low Power Systems Frequency Range: 10 to 400 MHz Low Current Drain: 10 mA Typ Output Power: +5.5 dBm (Typ) 5 Volt Supply
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50-ohm
LTS 542
RDE 1000 capacitor
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Sharp IXD 067
Abstract: IXD 067 LH0080A LH0080A SHARP Z80B-CPU sharp z80 Sharp LH0080A LH0080 Z80E Z80B
Text: LH0080 Z80 CPU Central Processing Unit LH0080 • Z80 CPU Central Processing Unit Description Pin Connections The L H 0 0 8 0 Z 8 0 CPU Z 80 CPU for sh ort be low is a g e n e r a l-p u r p o se 8 - b i t m icrop rocessor fabricated usin g an N -chan nel silic o n -g a te process.
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LH0080
LH0080
LH0080A
LH0080B
LH0080E
Sharp IXD 067
IXD 067
LH0080A SHARP
Z80B-CPU
sharp z80
Sharp LH0080A
Z80E
Z80B
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Untitled
Abstract: No abstract text available
Text: I nternational 5KP5.0 thru S em ico nducto r , I nc . TRANSIENT VOLTAGE SUPPRESSORS 5KP110A UNI-POLAR 5.0 to 110 VO LTS 5000 WATT PEAK POWER :o 5.0 WATT STEADY STATE .340/. 360 SYMBOL Peak Power Dissipation at TA= 2 5 ° C , Tp= 1ms N o te 1 Steady State Power Dissipation at TL= 7 5 ° C
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5KP110A
J0DD37Ã
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