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    LTS 25 NP Search Results

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    LTS 25 NP Price and Stock

    LEM Holdings SSA LTS-25-NP

    SENSOR CURRENT HALL 25A AC/DC
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    LEM Holdings SSA LTS-25-NP-SP7

    CURRENT TRANSDUCER 25A
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    LEM Holdings SSA LTS-25-NP-SP6

    CURRENT TRANSDUCER 25A
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    LEM Holdings SSA LTS-25-NP-SP4

    CURRENT TRANSDUCER 25A
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    LEM Holdings SSA LTS-25-NP-SP10

    CURRENT TRANSDUCER 25A
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    LTS 25 NP Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LTS25-NP Beijing LEM Electronics Multipole Current Sensor Original PDF
    LTS25-NP LEM Current Transducer Original PDF
    LTS25-NP LEM Current Transducer Original PDF
    LTS-25-NP LEM Current Transducers, Sensors, Transducers, SENSOR CURRENT 25A 5V TH Original PDF
    LTS 25-NP LEM Interface Misc, Current Transducer Original PDF

    LTS 25 NP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only LED DISPLAY LTS-546AJD-25 DATASHEET Rev Description By ORIGINAL 01 Warin S Refer to LTS-546AJD change pin length to May 28, 2009 2.6mm.+/-0.2mm. 02 Add bin table on page 4 of 5 Kittisak B. April 08/2010


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    PDF LTS-546AJD-25 LTS-546AJD DS30-2010-0066 BNS-OD-C131/A4 15percentage

    LTS 25-NP

    Abstract: 25-NP LEM Components lem lts lts 25 np lts 6 np
    Text: Current Transducer LTS 25-NP IPN = 8 - 12 - 25 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Preliminary Electrical data


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    PDF 25-NP LTS 25-NP 25-NP LEM Components lem lts lts 25 np lts 6 np

    lem lts

    Abstract: 25-NP lts 25 np
    Text: Current Transducer LTS 25-NP IPN = 25 At For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16054 Electrical data IPN IPM VOUT


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    PDF 25-NP lem lts 25-NP lts 25 np

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer LTS 25-NP For the electronic measurement of currents: DC, AC, pulsed, mixed with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 25 At 16054 Electrical data IPN IPM VOUT G


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    PDF 25-NP

    LEM Components

    Abstract: lem lts lts 6 np 25-NP
    Text: Current Transducer LTS 25-NP IPN = 8 - 12 - 25 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT


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    PDF 25-NP LEM Components lem lts lts 6 np 25-NP

    25-NP

    Abstract: LTS 25-NP
    Text: IPN = 8 - 12 - 25 A Current Transducer LTS 25-NP For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Preliminary Electrical data


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    PDF 25-NP 25-NP LTS 25-NP

    Untitled

    Abstract: No abstract text available
    Text: Current Transducer LTS 25-NP For the electronic measurement of currents: DC, AC, pulsed, mixed with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 25 At 16054 Electrical data IPN IPM VOUT G


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    PDF 25-NP

    25-NP

    Abstract: No abstract text available
    Text: Current Transducer LTS 25-NP IPN = 8 - 12 - 25 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT


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    PDF 25-NP 25-NP

    LTS 25-NP

    Abstract: lem lts 25 lts 25 np lem 703 25-NP
    Text: IPN = 25 At Current Transducer LTS 25-NP For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16054 Electrical data IPN IP VOUT


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    PDF 25-NP LTS 25-NP lem lts 25 lts 25 np lem 703 25-NP

    LTS 25-NP

    Abstract: lts 6 np 25-NP
    Text: Current Transducer LTS 25-NP IPN = 8 - 12 - 25 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP V OUT


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    PDF 25-NP LTS 25-NP lts 6 np 25-NP

    LTS25-NP

    Abstract: 25-NP lts 6 np LTS 25-NP
    Text: 2002-06-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 76-963-21 Strömsensor LTS25-NP Current Transducer LTS 25-NP IPN = 8 - 12 - 25 A For the electronic measurement of currents : DC, AC, pulsed, mixed,


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    PDF LTS25-NP 25-NP LTS25-NP 25-NP lts 6 np LTS 25-NP

    2N2708

    Abstract: 2N760 2N327B 2N2511
    Text: LOW LEVEL AMPLIFIERS Electrical Characteristics @ 25 C M axim um Ratings Type NPN Pd Am bient mW PNP NF @ f V C E Sat @ l c / lß VcB V o lts VcE V olts V eb V o lts mA M in /M a x Case V o lts Geometry & Character­ ization Applicable Letter MOT. 2N327A


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    PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A 2N929 2N929A 2N2708 2N2511

    2n697a

    Abstract: 2N497 2N498 2N656 2N657 2N696 2N697 2N698 2N699 2N699A
    Text: Transistors Coni. Discrete Devices General Purpose Am plifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A


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    PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N697A 2N698 2N613B 2N1711 2N699 2N699A

    BSY39

    Abstract: 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n697a 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent
    Text: Transistors Coni. Discrete Devices General Purpose Amplifiers E lectrical Characteristics @ 25° C M ax im um Ratings Type Polarity PD VCE VEB V o lts V o lts V o lts A m b ie n t mW V c E ( S a t ) @ I c / lß H f e >C VCB M in/M ax mA V o lts m A/m A


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    PDF 2N497 2N498 2N656 2N657 2N696 2N697 2N697A 2N698 BSY51 2N2218 BSY39 2N697 equivalent 2N1420 equivalent BFY50 equivalent 2n1613 equivalent 2N696 equivalent 2N1711 equivalent 2N1711 MOTOROLA 2N718 equivalent

    TZ82

    Abstract: TZ-81 2N4275 TZ-82 2N5134 2N3646 TZ582 TZ-581 2N4256 MPS404
    Text: ^ Econoline" Plastic-Molded K H WWC Silicon SEPT" Transistors SWITCHES >- ce. < o o. T y p e No. D-C C U R R E N T G A IN h FE Pd = 25 C V (BR) V (BR) V (BR) ICBO CBO CEO EBO nA (mW) V o lts V o lts V o lts M ax. ta Conditions L im its lc (m A ) V CE V o lts


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    PDF MPS404 MPS404A MPS706 MPS706A MPS2369 TZ-582 2N5209 2N5210 2N5220 2N5221 TZ82 TZ-81 2N4275 TZ-82 2N5134 2N3646 TZ582 TZ-581 2N4256

    2N5551 equivalent

    Abstract: 2N3856 equivalent 2n5551 2n3877 2N3856A 2N3843A 2N3844A 2N3854A 2N3855 MPS-H34
    Text: Econoline SPRAGUE HIGH-FREQUENCY >- PD os Ta = 25 C « _> Silicon S E P T R Transistors AMPLIFIERS/OSCILLATORS D -C C U R R E N T G A IN h FE C o nditions V (BR) V (BR) V (BR) •cBO CEO V o lts E BO V o lts mA Max. <mA) .050 4 5 2 (mW) C BO V o lts M PS-H32


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    PDF MPS-H32 MPS-H34 TP918 TP3563 TP5222 2N3843 20N5174 2N5175 2N5176 2N5550 2N5551 equivalent 2N3856 equivalent 2n5551 2n3877 2N3856A 2N3843A 2N3844A 2N3854A 2N3855

    BC238B npn

    Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
    Text: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN


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    PDF BC182A BC182B BC212A EC212B BC237A BC237B BC238A BC168A BC168B BC168C BC238B npn BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C

    ECG283

    Abstract: ECG263 ECG261 ECG270 darlington pair transistor ECG287 ECG264 ECG288 ECG268 ECG269
    Text: Transistors COnt#d C o lle c to r T o E m itte r V o lts C o lle c to r T o Base V o lts D e s c rip tio n a n d A p p lic a tio n ECG Typ e (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) BVc b o ECG260 bv Ceo Base to E m itte r V o lts B V EBO M a x.


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    PDF ECG260 ECG239> ro-127 ECG261 ECG262) r0-220 ECG262 ECG261 O-220 ECG263 ECG283 ECG270 darlington pair transistor ECG287 ECG264 ECG288 ECG268 ECG269

    2N2484

    Abstract: 2N2483 2N930 DN2484
    Text: TRANSISTOR CHIPS 3 HIGH GAIN - SMALL SIGNAL NPN £ IC - 10/iA 2N2483 40120 X 100% Probe Tested to These Parameters @ 25°C h FE @Vc e = 5 V V cB O V o lts M in. e ic = @lc 100i m a e ic = 1m A 75 Min 175 Min , 10^ A l E =0 60 v ceo V o lts M in. @'c = 10m A


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    PDF 2N2483 2N2484 2N930 DN2484 10/jA 10jiA 100MA 140KH. 500MA N30MH. 2N2484 2N2483 2N930 DN2484

    BD368

    Abstract: MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5629 2N5631
    Text: NPN PNP v CEO V o lts M in./M ax. •c Am p V CE sat @ >C V o lts Max. Am p. f T MHz PD Case Watts le = 16.0 A. MJ4034 BD317 2N 5629 M J4035 2N 5630 M J3773 2N5631 MJ4031 BD318 2N6029 M J4032 2 N6030 2N6031 80 100 100 100 120 140 140 1 0 0 0 /2 5 /25 /10 0


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    PDF MJ4034 MJ4031 BD317 BD318 2N5629 2N6029 MJ4035 MJ4032 2N5630 2l\l6030 BD368 MPC1000 MPC900 bd365 voltage regulators 20 amp to3 b0365 BD364 MJ3771 2N5631

    ECG18

    Abstract: 2T202 ECG10 # Frequency at which common emitter current gain is 70.0 of low frequency gain T17 amp ECG29 # Frequency at which common emitter current gain is 70.0 of low frequency gain 1-50 T28A ecg32
    Text: Transistors Bi-Polar Types Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts b v C bo Description and Application ECG Type C o lle c to r T o E m itter V o lts B a s e to E m itter V o lts BVc e o b v ebo Max. Collector Current


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    PDF ECG10 ECG11 ECG12 ECG11) ECG13 T20-3 ECG14 ECG31 ECG32) O-92M ECG18 2T202 # Frequency at which common emitter current gain is 70.0 of low frequency gain T17 amp ECG29 # Frequency at which common emitter current gain is 70.0 of low frequency gain 1-50 T28A ecg32

    2N4007

    Abstract: BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent
    Text: SPRAGUE Metal-Encased Silicon S E P T R Transistors HIGH-VOLTAGE VIDEO OUTPUT TRANSISTOR >- Type No. os < Pd T* = 25 C s V BR Ic B O CEO V o lts EBO V o lts iiA lc Watts CBO V olts Max. (m A) 1.0 300 250 7 ' Lim ts Con dition s V <BR) NPN 2N3440 D-C C U R R E N T G A I N ( h FE)


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    PDF 2N3440 O-450 BC108A BC108B BC108C BC109B BC109C BC110 BC177A BC177B 2N4007 BC140 equivalent 2N4007 equivalent TRANSISTOR pnp BC140 TRANSISTOR BC140 BC141 equivalent 2N3060 BC179C TRANSISTOR BC109b bc108b equivalent

    ECG189

    Abstract: ECG181 ECG162 ECG164 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG172A ECG188
    Text: Transistors cont'd E C G Type D escrip tio n and A pplicatio n (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To B a se V o lts Collector To Em itter V olts B a se to Em itter V o lts b v CBO b v CEO bvebo M ax. D e v ice D iss. P p W atts


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    PDF ECG162 ECG163A ECG164 ECG165 ECG171 BC6296) O-202 ECG172A O-92HS ECG192A ECG189 ECG181 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG188

    D29A5

    Abstract: 2N5381 transistor 3405 npn 2N5383 D29A4 2N4425 2N2713 2N5380 2N5368 2N5371
    Text: SPRAGUE Econoline P la stic -M o ld e d Silicon SEPT" Transistors Type No. P O L A R IT Y GENERAL-PURPOSE AMPLIFIERS/SWITCHES D -C C U R R E N T G A IN h FE PD Ta = 25 C (mW) V (BR) CBO V olts V (BR) CEO Vo lts V (BR) EBO Vo lts ICBO mA Cond tions Max. lc


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    PDF 2N5368 2N5370 2N5371 2N5372 2N5373 2N4954 2N5418 2N5419 D29A4 D29A5 2N5381 transistor 3405 npn 2N5383 2N4425 2N2713 2N5380