LTA 702 N
Abstract: No abstract text available
Text: 2N7002DW 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) 0.087(2.20) 0.078(2.00) • High Density Cell Design For Ultra Low On-Resistance
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2N7002DW
500mA
2002/95/EC
OT-363
MIL-STD-750
006grams
T-363
LTA 702 N
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LTA 702 N
Abstract: LTA 702
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATU RES * 60 Volt V CE0 P A R T M A R K IN G D E T A IL - 702 ABSOLUTE MAXIMUM RATINGS, PARAM ETER SYM BO L D ra in -S o u rce V o lta ge ^DS C o n tin u o u s D rain C u rren t at T <Jmb=25°C
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300jis.
LTA 702 N
LTA 702
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sot 23 transistor 70.2
Abstract: LTA 702 N k/702 P transistor
Text: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
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JE700/701/702/703
MJE800/801/802/803
MJE700/701
MJE702/703
GQG77fe
sot 23 transistor 70.2
LTA 702 N
k/702 P transistor
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LTA 702 NE
Abstract: LTA 702 N lm 703 op amp ac701k LTA 703s 703JP LTA 703 S LTA 702
Text: BURR - BROW N [ DAC701 DAC702 DAC703 ¿ ^ 3 ] Monolithic 16-Bit DIGITAL-TO-ANALOG CONVERTERS FEATURES • MONOTONIC at 15 bits OVER FULL SPECIFICATION TEMPERATURE RANGE VOUT AND Iout MODELS HIGH ACCURACY: Linearity Error ±0.0015% of FSR max Differential Linearity Error ±0.003% of FSR
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DAC701
DAC702
DAC703
16-Bit
DAC70,
DAC71,
DAC72
54/74C-
54/74HC-compatible
24-pin
LTA 702 NE
LTA 702 N
lm 703 op amp
ac701k
LTA 703s
703JP
LTA 703 S
LTA 702
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s41 sensor
Abstract: No abstract text available
Text: ROHM CORP/ EXEL MELECS bbE D • 702^014 QGD17tifl E & L 24fi XL93LC66 4,096-Bit Serial Electrically Erasable PROM with 2V Read Capability PIN CONFIGURATIONS FEATURES ■ State-of-the-Art Architecture — Nonvolatile data storage — Single supply - 5V operation
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XL93LC66
096-Bit
0D01775
s41 sensor
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2018a
Abstract: DRK-289 SC402530 M309 SXC-10
Text: S e rie s 9 2 o ffe rs c u s to m e rs a w ide range o f c irc u la r connectors s u ita b le fo r th e v a s t m ajority o f ind ustria l and com m ercial applications. Integral to the overall Series 9 2 design concept are a num ber o f key features and b enefits fo r users:
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IP-67
SC202530
SC302530
SC402530
SC201530
SC301530
SC401530
2018a
DRK-289
M309
SXC-10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTOCOUPLER PS2702-1 ,PS2702-2,PS2702-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES nepoc series DESCRIPTION T he P S 2 7 0 2 -1 , P S 2702-2, P S 2702-4, are o p tica lly co u p le d Isolators c o n ta in in g a G aA s light em ittin g d io d e and an
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PS2702-1
PS2702-2
PS2702-4
P11307EJ6V0DS00
2702-1-E
2702-1-F
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bux23
Abstract: No abstract text available
Text: • 7 ^ 5 ^ 5 3 7 P O S A I S 7 ■ 5 S G S -T H O M S O N lailllBiQglLllETfBQHniES_ BUX23 S G S-THOMSON 3QE D NPN SILICON TRANSISTOR D E S C R IP T IO N High speed, high current, high power NPN transis tor intended for use in switching and amplifier appli
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BUX23
bux23
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5751001530
Abstract: en50022 35 15 rail en 50022 04.343.5356.8 "EN 50022" DIN EN 50035 WKN35 en 50022 VDE-REG 57.597.0153.0
Text: Modular Terminals type WKN U-foot 10 mm2 U-foot 16 mm2 6$ Wire size VDE rating Fine stra n d e d g r.c stra n d e d vo lta g e J _J ° _ _ J ° Z 16 AW G No. 16-6 rating CSA rating Width AW G No. 16-6 Wire strip length am p s Fine stra n d e d stra n d e d
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Field/90A
Z5I5221
5751001530
en50022
35 15 rail en 50022
04.343.5356.8
"EN 50022"
DIN EN 50035
WKN35
en 50022
VDE-REG
57.597.0153.0
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XLS93C46-3
Abstract: XL93C46 XLE93C46-3 SK 702 XL93C46-3 93c46 wp Exel
Text: ROHM CORP/ EXEL NELECS k/fcrf bbE D • 7fiE‘i G m MICROELECTRONICS GÜDlb7S ST7 XL93C46-3 Exot/tonetIn$ 1,024-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability F E A TU R ES PIN C O N F IG U R A TIO N S ■ S tate-o f-th e-A rt A rch itecture
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00Dlb75
XL93C46-3
024-Bit
XLS93C46-3
XL93C46
XLE93C46-3
SK 702
XL93C46-3
93c46 wp
Exel
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Untitled
Abstract: No abstract text available
Text: 2N6661J AN/JANTX/J ANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) 90 fDS(on) Max ( Q ) v GS(th) ( V ) Id (A) 0 .8 to 2 0 .8 6 4 e vGS = io v FEATURES BENEFITS APPLICATIONS • • • • • • • Guaranteed Reliability
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2N6661J
16-Jul-01
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Untitled
Abstract: No abstract text available
Text: DHA Series Right Angle Receptacle • Stamped metal shell with metal mating locks DHA-RP series Ordering Information DHA-RP36-R13AN Dimensions Unit:m m inch ;7 R H -m n art + n n d 'i 37.61 ±0.1 (1.481 ±.004) 33.94±0.1(1.336±.004) 2.8±0.1 PI A. HOLE
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DHA-RP36-R13AN
079in.
IEEE-1284-C
IEEE-1284-C
UL94V-0)
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LTA 702 N
Abstract: 702 h 702P LTA 702
Text: Ç J i S u p e r te x in c H V 702 H V 712 . Product Objective Specifications 220V 40-Channel Vacuum-Fluorescent Display Driver Ordering Information Package Options Device 60 Pin Plastic Gullwing Die H V 702 H V 702P G H V 702X H V 712 H V 712P G H V 712X
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40-Channel
LTA 702 N
702 h
702P
LTA 702
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CMGA15-PN
Abstract: qml-38535 idt7025s45gb IDT7025S35FB
Text: R E V IS IO N S LTR_ D E S C R IP T IO N _DATE YR-MO-DA _ A P P R O V E D A A dd ed p ro visio n s fo r the in clusion o f ra d ia tio n -h a rd e n e d devices. U p da te d b o ile rplate. A d d e d case o u tlin e "Z " to dra w in g. A dd e d de vice
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C70r
Abstract: IT2101
Text: MITSUBISHI TRANSISTOR MODULES \ QM75TF-HB | —mmm^ HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM D im e n s io n s in m m 102 ± 0.3 4-$5.5 7-M 4
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QM75TF-HB
150mA*
C70r
IT2101
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ma702
Abstract: LTA 702 N UA702 lta 702 Fairchild uA702 A702HC UA702HM XA702 JUA702C UA702H
Text: UA702 WIDEBAND DC AMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUIT G ENERAL DESCRIPTION —The yA 7 0 2 is a m o no lith ic DC A m p lifie r constructed using the Fairchild Planar* epitaxial process, i t is intended fo r use as an operational am plifier in analog computers, as a
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UA702
uA702
ma702
LTA 702 N
lta 702
Fairchild uA702
A702HC
UA702HM
XA702
JUA702C
UA702H
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AFiB
Abstract: No abstract text available
Text: ROHN CORP/ EXEL MELECS EX e L mm= S bbE J> m T ä P i ü m 0GG1713 130 _ XL93LC56 2,048-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES PIN C O N F IG U R A TIO N S • S tate-of-th e-A rt A rch itecture
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XL93LC56
048-Bit
7S2T014
AFiB
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K241
Abstract: k271 0
Text: F N R - D ÍS « i¿ 2 S 1 l i Pfi f! 1* t í if FNR F N R -D MODULE ALTERNATIVE POWER ARRESTER PROCTECTOR • DIMENSION _4£L EXPLANATIO N OF PART NUM BERS F I ^ S I iî î S L NR D I 16 C IR C U IT CONNECTION - L íüííÉ SI Protected c iru it N - « Æ ig iS S I
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2sb945
Abstract: No abstract text available
Text: P ow er T ransistors 2SB945 2SB945 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD127Q • Features • Low c o lle c to r-e m itte r sa tu ra tio n v o lta g e V c e <ssd • G ood lin earity o f DC c u r r e n t gain (Iife )
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2SB945
2SD127Q
2sb945
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smd marking YB
Abstract: qml-38535 GDFP2-F28 GDIP1-T28
Text: R E V IS IO N S LTR D E S C R IP TIO N APPROVED D A T E Y R - m o - d a O utlin e letter, Y, case o u tlin e ch a ng ed to F -1 1 fo r stan dard izatio n. C o nve rt to m ilitary draw ing form at. E ditorial cha ng es throu gh ou t. 1988 JAN 19 M ichael A. Frye
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8602502YA
GEM10702QYA
6025023A
GEM10702Q3A
8602502XC
GEM10702QXC
8602502YC
GEM10702QYC
86025023C
GEM10702Q3C
smd marking YB
qml-38535
GDFP2-F28
GDIP1-T28
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full wave controlled rectifier using RC triggering circuit
Abstract: 3M Electric Joint Compound SF1154 C702 diode dissipator C702 C702L C702LA C702LB C702LC
Text: High Power Silicon Controlled Rectifier C702 1000 A Avg. Up To 2400V AMF’ LI F Y l NG G A T E The General Electric C 702 Silicon Controlled R ectifier feature the new ly developed m ulti-diffusion tech n ology to com bine high blocking voltage cap ability with low on-state con d uction losses.
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40327
Abstract: 2N3055 40375 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178 2N6180
Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * l e * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037
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ITO-391
Pt-85-117
80-12SW
30x30
42x42
103x103
40327
2N3055
40375
2N2102
2N3879
2N4036
2N5320
2N5322
2N6178
2N6180
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Untitled
Abstract: No abstract text available
Text: SIEMENS Intelligent 4-A Low-Side Switch TLE 4224 P re lim in a ry Data SP T-IC F eatures • S ingle low -side sw itch, 4 A • L o w -O N -re sistan ce typ. 0.25 £2 • Pow er lim itation • O ve rte m p era tu re shutdow n • O ve rlo a d shutdow n
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VPT05108
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40375
Abstract: 40327 40363 2N5323 2N3265 power inverter 140w dc to ac 2N2102 2N3879 2N4036 2N5320
Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * l e * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037
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ITO-391
Pt-85-117
80-12SW
30x30
42x42
103x103
40375
40327
40363
2N5323
2N3265
power inverter 140w dc to ac
2N2102
2N3879
2N4036
2N5320
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