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    LT232

    Abstract: LT-2320 n-channel enhancement mosfet n-channel mosfet SOT-23
    Text: LT2320E N-Channel Enhancement MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The LT2320E is the N-Channel logic enhancement mode power field ● RDS ON =21mΩ@VGS=4.5V effect transistors are produced using high cell density, DMOS trench ● RDS(ON)=25 mΩ@VGS=2.5V


    Original     		LT2320E LT2320E 300us, OT-23 LT232 LT-2320 n-channel enhancement mosfet n-channel mosfet SOT-23 PDF

    mosfet vgs 5v SOT23

    Abstract: LT-2320 LT2320E n-channel enhancement mosfet
    Text: LT2320E N-Channel Enhancement MOSFET, ESD Protection GENERAL DESCRIPTION FEATURES The LT2320E is the N-Channel logic enhancement mode power field ● RDS ON =21mΩ@VGS=4.5V effect transistors are produced using high cell density, DMOS trench ● RDS(ON)=25 mΩ@VGS=2.5V


    Original     		LT2320E LT2320E mosfet vgs 5v SOT23 LT-2320 n-channel enhancement mosfet PDF

    LT2320E

    Abstract: n-channel enhancement mosfet N-Channel Enhancement Mode 25v 55a
    Text: LT2320E N-Channel Enhancement MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The LT2320E is the N-Channel logic enhancement mode power field ● 20V/6.5A, RDS ON =21mΩ@VGS=4.5V field effect transistors are produced using high cell density, DMOS ● 20V/5.5A, RDS(ON)=25 mΩ@VGS=2.5V


    Original     		LT2320E LT2320E 300us, OT-23 n-channel enhancement mosfet N-Channel Enhancement Mode 25v 55a PDF