RLYB10240
Abstract: No abstract text available
Text: ECG Relays and Accessories Series A and Solid State Power Relays Opto Isolated , SPSTNormally Open B • • • • • • • SCR Outputs (Non Suffixed) Zero Voltage Switching (Non Suffixed) DC Mosfet Output Versions (D-Suffix) TRIAC Output Versions (T-Suffix)
|
OCR Scan
|
PDF
|
RLYA10240
ECG441A
ECG424
RLY9201
RLY92Q1
RLYB10240
|
lt 332 diode
Abstract: 10 DC-1 diode RLYB1210D RLYA25480 varistor 332 RLYB10240 RLYA40240 RLYA10240 RLYB40480 RLYB25240T
Text: ECG Relays and A ccessories Solid State Power Relays Opto Isolated , SPSTNormally Open S e ries A and B • • • • • • • S C R Outputs (Non Suffixed) Zero Voltage Switching (Non Suffixed) DC M osfet Output Versions (D-Suffix) TR IA C Output Versions (T-Suffix)
|
OCR Scan
|
PDF
|
ECG441A
ECG424
RLY9201
RLY92Q1
lt 332 diode
10 DC-1 diode
RLYB1210D
RLYA25480
varistor 332
RLYB10240
RLYA40240
RLYA10240
RLYB40480
RLYB25240T
|
D F 331 TRANSISTOR
Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Text: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
|
OCR Scan
|
PDF
|
KSD5012
T-33-11
GQG77fe
D F 331 TRANSISTOR
lt 332 diode
samsung tv
NPN Transistor 1A 800V to - 92
C 3311 transistor
transistor t 04 27
|
EL332GD
Abstract: EL332HD EL332ED EL332YD EL332ID 332ED 332HD 332ID 332PYD 332RD
Text: “E V E R L I G H T ELECTRONICS 3DE D 341S7D3 DDGODta? /-•//-a/ T MAIN FEATURES: • LO W G O ST. • I.C. CO M PIT ABLE. • LO W C U R R E N T R EQ U IR E M E N T S . • LO N G LIFE-S O LID S T A T £ RELIABILITY, 'à â à 332 SERIES Round Type LEO Lamps 5.0mm
|
OCR Scan
|
PDF
|
34157D3
332RD
332HD,
332GD/SGD
332PYD
332ID,
332YD
332ED
EL332ED
EL332GD
EL332HD
EL332YD
EL332ID
332HD
332ID
|
Untitled
Abstract: No abstract text available
Text: 'C LUM-2568M L352 V / Light Emitting Diodes LUM-2568ML352 I LUM-2568ML352 H 7 7Ji^y t 1 6 X 1 6 K-y h T h 1 6 X 1 6 Dot Matrix Unit D im e n s io n s U n it : m m ^ y h, Sfc lT ? É 5 16X16K'y t-Th StT'-To U, i t o Mm LSI = :> h n - 5 l i , 3 E S i c AtULifòIfó-eto
|
OCR Scan
|
PDF
|
LUM-2568M
LUM-2568ML352
LUM-2568ML352
16X16K
200mm
200mm.
|
LR-37
Abstract: No abstract text available
Text: Light Emitting Diodes Basic order units Basic order units •Ordering To place an order, refer to the following tables. Make sure the product name, type of packaging taping of lamps and chip LEDs, etc. and basic order unit are correct. Please order a quantity which is a multiple of
|
OCR Scan
|
PDF
|
SLR-505
LA-370
LM-0354
LM-0355
LM-2035
LM-0701
LM-2064
LM-1256
LM-2256
LM-2512
LR-37
|
IRF330
Abstract: IRF331 IRF332 IRF333 331z
Text: 7 9 6 4 1 4 2 S ^M S U N G S E M I C O N D U C T O R I DEI TTbMms DDDSim 9 8 D 0 5114 7 “ D T ^ 3 7 ~ // N-CHANNEL POWER MOSFETS IRF330/331/332/333 FEATURES • Low RDS on • Improved inductive ruggedness • • • • • • Fast switching times Rugged polysilicon gate ceil structure
|
OCR Scan
|
PDF
|
0DDS114
IRF330/331Z332/333
IRF330
IRF331
IRF332
IRF333
331z
|
1N4474
Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Text: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.
|
OCR Scan
|
PDF
|
1N4496
1N6485
1N6491
MIL-S-19500/406.
1N4460
1N4474
4661N
1N1492
1N44B
1N4471
1N4479
|
SE1450
Abstract: No abstract text available
Text: u t s 5 & # m j ,t » lí|l?ft: 51S03J CÈ.Î5 : [ 755-fl32 79 I 1B /B 3 2 7 B S 5 9 /3 3 2 7 BB6Ü fÉ J t; 0 7 6 3 -8 3 2 7 9 2 0 3 R IíIt S lilffl ' S e n s o rO g p n I I o s z «vwvi i i p o I I o s ü . -com co m SE1450 G a A s Infrared Em ittin g Diode
|
OCR Scan
|
PDF
|
0755-B3Z
1B/3327B659/332
51B033
SE1450
SE1460W1,
SE14SHW1
SE1460-002,
SE14SHWEL
SE1460-003,
SE1460-003L
SE1450
|
c1237
Abstract: FI6 diode 4116 DIODE REDRESSEMENT QQGE333 onduleur variateur lh2000 7-T21 Thomson-CSF diode
Text: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,
|
OCR Scan
|
PDF
|
0QE3317
7T21237
G233h
c1237
FI6 diode
4116
DIODE REDRESSEMENT
QQGE333
onduleur
variateur
lh2000
7-T21
Thomson-CSF diode
|
UPA64H
Abstract: PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773
Text: NEC m =t=fi\rx Aa Di ode Ar r ay //PA64H i t K 7 K Silicon Epitaxial Diode A rray High Speed Switching aîPA64Hi±, 7 / - SIP ' r - ' J > ) •> K * i i ü ï ü X 'f f l ^ H / P A C K A G E D IM E N S IO N S tc, (U nit : mm) (em?) -y V t„ ¡^ S / F E A T U R E S
|
OCR Scan
|
PDF
|
uPA64H
PA64Hi±
UPA64H
PA64H
IRZ 46
T108
diode 476 k
upa64
8 pin ic 3773
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO ese D • b3b?ass -aoaoiia 2 wêt-l<-is 2N4199 thru 2N4204 Designer's Data Sheet Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . fast switching, high-voltage Thyristors especially designed for pulse modulator
|
OCR Scan
|
PDF
|
2N4199
2N4204
2N4199
|
p626
Abstract: IC P626 TLP626-1
Text: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled
|
OCR Scan
|
PDF
|
TLP626
TLP626,
p626
IC P626
TLP626-1
|
609-5015M
Abstract: D0061b TD2425-B tb ansley TD2425F CRY30M 609-2615M crydom as0241 three phase SCR gate drive circuit AC15A
Text: Solid S t a t e Relays I n p u t /O u t p u t M o du les P o w er M o du les CRY3 SSSffft-VX ifWM 0 M D53TP 50D INPUT STATUS /Z iiŒ w « a i2 CSYDOM CH Y O O M 3 PHASE SOUD STATE RELAY S O U O -S T A T E R E L> S O U O -S T A T E RELAY \j % A C R Y D O M
|
OCR Scan
|
PDF
|
D53TP
D2425
A0241
CX380D5
4-13VDC
380VAC
E72445)
609-5015M
D0061b
TD2425-B
tb ansley
TD2425F
CRY30M
609-2615M
crydom as0241
three phase SCR gate drive circuit
AC15A
|
|
diode lt 238
Abstract: samsung tv lt 332 diode samsung SSE
Text: SAMSUNG SEMICONDUCTOR INC KSD5011 im e d I ao a?tta 4 N P N T R IF L t DIFFUSED P L A N A R SIL IC O N T R A N SIS T O R T-33-11 C O L O R TV HORIZONTALNOUTPUT APPLICA TIO N S DAM PER DIO DE BUILT IN TO-3P(F) High Collector-Base Voltage V cbo =1500V A BSO LU T E M A X IM U M RATINGS (Ta=25°C)
|
OCR Scan
|
PDF
|
KSD5011
T-33-11
GQG77fe
diode lt 238
samsung tv
lt 332 diode
samsung SSE
|
HOA1877
Abstract: No abstract text available
Text: HOA1877 Transmissive Sensor FEATURES • C hoice ol phoblransislor or pholodarling fcn output » Wide operating temperature range - 5 5 'C lo -t-IOO Cj ■ a SO h. (12.7 mm high optical axis position ■ a 375 in.(9.52 m m j slol width iiu m if DESCRIPTION
|
OCR Scan
|
PDF
|
HOA1877
HQA1E77-W1,
HOA1E77-QCH,
HOAM77-OCH
MA1CI77-HÂ
HOA1i77-OOC
HOAK77-W1,
3HH3M30B
HOA1877
|
diode lt 0236
Abstract: thomson 237 DT 2 SiC IPM 237 thomson
Text: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,
|
OCR Scan
|
PDF
|
0QE3317
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
diode lt 0236
thomson 237 DT 2
SiC IPM
237 thomson
|
diode Marking Code b3
Abstract: Zener Diode LT 432 diode b3 diode code b2 Zener Diode B1 9 B1 6 zener marking 222 zener diode diode lt 823 zener diode marking 222 HZM4.3NB1
Text: ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9V through 38V of zener voltage provide flexible application. • MPAK Package is suitable for high density
|
OCR Scan
|
PDF
|
ADE-208-130
HZM36NBTL
HZM24NB3TL
SC-59A
diode Marking Code b3
Zener Diode LT 432
diode b3
diode code b2
Zener Diode B1 9
B1 6 zener
marking 222 zener diode
diode lt 823
zener diode marking 222
HZM4.3NB1
|
n11a
Abstract: 101S UHP4
Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-4-6 metal can package ' C hdce ol [Ut window or lensed package • 90r or 18’ rcminalj acceptance angle oplion ' Wide operating temperature range (- 55 'C lo+125'C j ' External base connection for added control
|
OCR Scan
|
PDF
|
SD3443/5443
SCM4S-001
lo-100
8W443
755--B
B/B32
SU/S321
n11a
101S
UHP4
|
Untitled
Abstract: No abstract text available
Text: ykiyjxiyki Quad SPST CMOS Analog Switches Maxim’s MAX332, DG202 and DG212 are normally open, quad single-pole-single-throw SPST analog switches. These CMOS switches can be continuously operated with power supplies ranging from ±4.5V to ±18V. Maxim guarantees that the MAX332 and
|
OCR Scan
|
PDF
|
MAX332,
DG202
DG212
MAX332
DG202/212
DG202/DG212
DG201
DG211
332/D
|
Zener Diode LT 432
Abstract: 8.2 B2 ZENER diode marking code 682 zener diode 82 b3 marking 222 zener diode 4.7 B1 zener diode 273-0333 zener diode B2 bt 784 zener 5.1 B2
Text: I ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density
|
OCR Scan
|
PDF
|
ADE-208-130
SC-59A
Zener Diode LT 432
8.2 B2 ZENER
diode marking code 682
zener diode 82 b3
marking 222 zener diode
4.7 B1 zener diode
273-0333
zener diode B2
bt 784
zener 5.1 B2
|
IRF7203
Abstract: No abstract text available
Text: International ¡K?RRectifier PD 9.1102A IRF7203 PR ELIM IN A R Y HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
|
OCR Scan
|
PDF
|
IRF7203
1RF7203
002b53G
|
Untitled
Abstract: No abstract text available
Text: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / 1.5KE CASE 10 1500W .Î »] "t,& Breakdown Voltage TYPE 1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A 1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A 1.5KE10 1.5KE10A 1.5KE11 1.5KE11A 1.5KE12 1.5KE12A 1.5KE13 1.5KE13A
|
OCR Scan
|
PDF
|
5KE10
5KE10A
5KE11
5KE11A
5KE12
5KE12A
5KE13
5KE13A
5KE15
5KE15A
|
Untitled
Abstract: No abstract text available
Text: TELEDYNE SOLI» STATE SSE ]> ÔT17bt.ti OGGübS4 S3fl ITSS W E L E D Y N E SO LID STATE SOLID STATE DC RELAY OPTICALLY ISOLATED 2 & 5 A/50 VdC AC OR DC INPUT CONTROL ELECTRICAL SPECIFICATIONS FEATURES ; Ì I • TTL compatible inputs • Optional controlled rise & fall times
|
OCR Scan
|
PDF
|
T17bt
|