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    LT 332 DIODE Search Results

    LT 332 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    LT 332 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RLYB10240

    Abstract: No abstract text available
    Text: ECG Relays and Accessories Series A and Solid State Power Relays Opto Isolated , SPSTNormally Open B • • • • • • • SCR Outputs (Non Suffixed) Zero Voltage Switching (Non Suffixed) DC Mosfet Output Versions (D-Suffix) TRIAC Output Versions (T-Suffix)


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    PDF RLYA10240 ECG441A ECG424 RLY9201 RLY92Q1 RLYB10240

    lt 332 diode

    Abstract: 10 DC-1 diode RLYB1210D RLYA25480 varistor 332 RLYB10240 RLYA40240 RLYA10240 RLYB40480 RLYB25240T
    Text: ECG Relays and A ccessories Solid State Power Relays Opto Isolated , SPSTNormally Open S e ries A and B • • • • • • • S C R Outputs (Non Suffixed) Zero Voltage Switching (Non Suffixed) DC M osfet Output Versions (D-Suffix) TR IA C Output Versions (T-Suffix)


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    PDF ECG441A ECG424 RLY9201 RLY92Q1 lt 332 diode 10 DC-1 diode RLYB1210D RLYA25480 varistor 332 RLYB10240 RLYA40240 RLYA10240 RLYB40480 RLYB25240T

    D F 331 TRANSISTOR

    Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
    Text: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )


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    PDF KSD5012 T-33-11 GQG77fe D F 331 TRANSISTOR lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27

    EL332GD

    Abstract: EL332HD EL332ED EL332YD EL332ID 332ED 332HD 332ID 332PYD 332RD
    Text: “E V E R L I G H T ELECTRONICS 3DE D 341S7D3 DDGODta? /-•//-a/ T MAIN FEATURES: • LO W G O ST. • I.C. CO M PIT ABLE. • LO W C U R R E N T R EQ U IR E M E N T S . • LO N G LIFE-S O LID S T A T £ RELIABILITY, 'à â à 332 SERIES Round Type LEO Lamps 5.0mm


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    PDF 34157D3 332RD 332HD, 332GD/SGD 332PYD 332ID, 332YD 332ED EL332ED EL332GD EL332HD EL332YD EL332ID 332HD 332ID

    Untitled

    Abstract: No abstract text available
    Text: 'C LUM-2568M L352 V / Light Emitting Diodes LUM-2568ML352 I LUM-2568ML352 H 7 7Ji^y t 1 6 X 1 6 K-y h T h 1 6 X 1 6 Dot Matrix Unit D im e n s io n s U n it : m m ^ y h, Sfc lT ? É 5 16X16K'y t-Th StT'-To U, i t o Mm LSI = :> h n - 5 l i , 3 E S i c AtULifòIfó-eto


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    PDF LUM-2568M LUM-2568ML352 LUM-2568ML352 16X16K 200mm 200mm.

    LR-37

    Abstract: No abstract text available
    Text: Light Emitting Diodes Basic order units Basic order units •Ordering To place an order, refer to the following tables. Make sure the product name, type of packaging taping of lamps and chip LEDs, etc. and basic order unit are correct. Please order a quantity which is a multiple of


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    PDF SLR-505 LA-370 LM-0354 LM-0355 LM-2035 LM-0701 LM-2064 LM-1256 LM-2256 LM-2512 LR-37

    IRF330

    Abstract: IRF331 IRF332 IRF333 331z
    Text: 7 9 6 4 1 4 2 S ^M S U N G S E M I C O N D U C T O R I DEI TTbMms DDDSim 9 8 D 0 5114 7 “ D T ^ 3 7 ~ // N-CHANNEL POWER MOSFETS IRF330/331/332/333 FEATURES • Low RDS on • Improved inductive ruggedness • • • • • • Fast switching times Rugged polysilicon gate ceil structure


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    PDF 0DDS114 IRF330/331Z332/333 IRF330 IRF331 IRF332 IRF333 331z

    1N4474

    Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
    Text: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.


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    PDF 1N4496 1N6485 1N6491 MIL-S-19500/406. 1N4460 1N4474 4661N 1N1492 1N44B 1N4471 1N4479

    SE1450

    Abstract: No abstract text available
    Text: u t s 5 & # m j ,t » lí|l?ft: 51S03J CÈ.Î5 : [ 755-fl32 79 I 1B /B 3 2 7 B S 5 9 /3 3 2 7 BB6Ü fÉ J t; 0 7 6 3 -8 3 2 7 9 2 0 3 R IíIt S lilffl ' S e n s o rO g p n I I o s z «vwvi i i p o I I o s ü . -com co m SE1450 G a A s Infrared Em ittin g Diode


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    PDF 0755-B3Z 1B/3327B659/332 51B033 SE1450 SE1460W1, SE14SHW1 SE1460-002, SE14SHWEL SE1460-003, SE1460-003L SE1450

    c1237

    Abstract: FI6 diode 4116 DIODE REDRESSEMENT QQGE333 onduleur variateur lh2000 7-T21 Thomson-CSF diode
    Text: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,


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    PDF 0QE3317 7T21237 G233h c1237 FI6 diode 4116 DIODE REDRESSEMENT QQGE333 onduleur variateur lh2000 7-T21 Thomson-CSF diode

    UPA64H

    Abstract: PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773
    Text: NEC m =t=fi\rx Aa Di ode Ar r ay //PA64H i t K 7 K Silicon Epitaxial Diode A rray High Speed Switching aîPA64Hi±, 7 / - SIP ' r - ' J > ) •> K * i i ü ï ü X 'f f l ^ H / P A C K A G E D IM E N S IO N S tc, (U nit : mm) (em?) -y V t„ ¡^ S / F E A T U R E S


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    PDF uPA64H PA64Hi± UPA64H PA64H IRZ 46 T108 diode 476 k upa64 8 pin ic 3773

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC DIODES/OPTO ese D • b3b?ass -aoaoiia 2 wêt-l<-is 2N4199 thru 2N4204 Designer's Data Sheet Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . fast switching, high-voltage Thyristors especially designed for pulse modulator


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    PDF 2N4199 2N4204 2N4199

    p626

    Abstract: IC P626 TLP626-1
    Text: TLP626,-2,-4 GaAs IRED a PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION Unit in mm T h e T O S H I B A TLP626, -2 and -4 consist of two g a l l i u m ar s e n i d e infreared emitting diodes c onnected in inverse parallel, optic a l l y coupled


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    PDF TLP626 TLP626, p626 IC P626 TLP626-1

    609-5015M

    Abstract: D0061b TD2425-B tb ansley TD2425F CRY30M 609-2615M crydom as0241 three phase SCR gate drive circuit AC15A
    Text: Solid S t a t e Relays I n p u t /O u t p u t M o du les P o w er M o du les CRY3 SSSffft-VX ifWM 0 M D53TP 50D INPUT STATUS /Z iiŒ w « a i2 CSYDOM CH Y O O M 3 PHASE SOUD STATE RELAY S O U O -S T A T E R E L> S O U O -S T A T E RELAY \j % A C R Y D O M


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    PDF D53TP D2425 A0241 CX380D5 4-13VDC 380VAC E72445) 609-5015M D0061b TD2425-B tb ansley TD2425F CRY30M 609-2615M crydom as0241 three phase SCR gate drive circuit AC15A

    diode lt 238

    Abstract: samsung tv lt 332 diode samsung SSE
    Text: SAMSUNG SEMICONDUCTOR INC KSD5011 im e d I ao a?tta 4 N P N T R IF L t DIFFUSED P L A N A R SIL IC O N T R A N SIS T O R T-33-11 C O L O R TV HORIZONTALNOUTPUT APPLICA TIO N S DAM PER DIO DE BUILT IN TO-3P(F) High Collector-Base Voltage V cbo =1500V A BSO LU T E M A X IM U M RATINGS (Ta=25°C)


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    PDF KSD5011 T-33-11 GQG77fe diode lt 238 samsung tv lt 332 diode samsung SSE

    HOA1877

    Abstract: No abstract text available
    Text: HOA1877 Transmissive Sensor FEATURES • C hoice ol phoblransislor or pholodarling fcn output » Wide operating temperature range - 5 5 'C lo -t-IOO Cj ■ a SO h. (12.7 mm high optical axis position ■ a 375 in.(9.52 m m j slol width iiu m if DESCRIPTION


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    PDF HOA1877 HQA1E77-W1, HOA1E77-QCH, HOAM77-OCH MA1CI77-HÂ HOA1i77-OOC HOAK77-W1, 3HH3M30B HOA1877

    diode lt 0236

    Abstract: thomson 237 DT 2 SiC IPM 237 thomson
    Text: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,


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    PDF 0QE3317 CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 diode lt 0236 thomson 237 DT 2 SiC IPM 237 thomson

    diode Marking Code b3

    Abstract: Zener Diode LT 432 diode b3 diode code b2 Zener Diode B1 9 B1 6 zener marking 222 zener diode diode lt 823 zener diode marking 222 HZM4.3NB1
    Text: ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9V through 38V of zener voltage provide flexible application. • MPAK Package is suitable for high density


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    PDF ADE-208-130 HZM36NBTL HZM24NB3TL SC-59A diode Marking Code b3 Zener Diode LT 432 diode b3 diode code b2 Zener Diode B1 9 B1 6 zener marking 222 zener diode diode lt 823 zener diode marking 222 HZM4.3NB1

    n11a

    Abstract: 101S UHP4
    Text: SD3443/5443 Silicon Phototransistor FEATURES • TO-4-6 metal can package ' C hdce ol [Ut window or lensed package • 90r or 18’ rcminalj acceptance angle oplion ' Wide operating temperature range (- 55 'C lo+125'C j ' External base connection for added control


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    PDF SD3443/5443 SCM4S-001 lo-100 8W443 755--B B/B32 SU/S321 n11a 101S UHP4

    Untitled

    Abstract: No abstract text available
    Text: ykiyjxiyki Quad SPST CMOS Analog Switches Maxim’s MAX332, DG202 and DG212 are normally open, quad single-pole-single-throw SPST analog switches. These CMOS switches can be continuously operated with power supplies ranging from ±4.5V to ±18V. Maxim guarantees that the MAX332 and


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    PDF MAX332, DG202 DG212 MAX332 DG202/212 DG202/DG212 DG201 DG211 332/D

    Zener Diode LT 432

    Abstract: 8.2 B2 ZENER diode marking code 682 zener diode 82 b3 marking 222 zener diode 4.7 B1 zener diode 273-0333 zener diode B2 bt 784 zener 5.1 B2
    Text: I ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density


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    PDF ADE-208-130 SC-59A Zener Diode LT 432 8.2 B2 ZENER diode marking code 682 zener diode 82 b3 marking 222 zener diode 4.7 B1 zener diode 273-0333 zener diode B2 bt 784 zener 5.1 B2

    IRF7203

    Abstract: No abstract text available
    Text: International ¡K?RRectifier PD 9.1102A IRF7203 PR ELIM IN A R Y HEXFET Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching


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    PDF IRF7203 1RF7203 002b53G

    Untitled

    Abstract: No abstract text available
    Text: TRANSIENT VOLTAGE SUPPRESSORS 1500W SERIES TVS DIODES / 1.5KE CASE 10 1500W .Î »] "t,& Breakdown Voltage TYPE 1.5KE6.8 1.5KE6.8A 1.5KE7.5 1.5KE7.5A 1.5KE8.2 1.5KE8.2A 1.5KE9.1 1.5KE9.1A 1.5KE10 1.5KE10A 1.5KE11 1.5KE11A 1.5KE12 1.5KE12A 1.5KE13 1.5KE13A


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    PDF 5KE10 5KE10A 5KE11 5KE11A 5KE12 5KE12A 5KE13 5KE13A 5KE15 5KE15A

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE SOLI» STATE SSE ]> ÔT17bt.ti OGGübS4 S3fl ITSS W E L E D Y N E SO LID STATE SOLID STATE DC RELAY OPTICALLY ISOLATED 2 & 5 A/50 VdC AC OR DC INPUT CONTROL ELECTRICAL SPECIFICATIONS FEATURES ; Ì I • TTL compatible inputs • Optional controlled rise & fall times


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    PDF T17bt