biss 0001
Abstract: NDH832P 006CI
Text: J k J National S emi co n d u c t o r " NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDH832P
b501130
biss 0001
NDH832P
006CI
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TN3440A
Abstract: No abstract text available
Text: S e m i c o n d u c t o r TN3440A & D iscrete P O W ER & S ig n a l T echnologies . National T N 3440A NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u se in h o rizo n tal driver, c la s s A off-line a m p lifier an d off-line sw itching a pp licatio ns. S o u rc e d from P ro c e s s 36.
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TN3440A
LSD1130
0Q40bm
O-226
L50113D
D01DL42
TN3440A
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NDS9405
Abstract: IAT50
Text: May 1996 N ationa I Semiconductor' NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9405
bSD1130
031tmb
NDS9405
IAT50
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NDB7061
Abstract: NDP7061 LD 8105 d0403
Text: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDP7061
NDB7061
Ru99ed
D04031L
LD 8105
d0403
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mmbt2906a
Abstract: MMBTL51 MMBT2904A
Text: ^Sem iconductor SEMICOND Surface Mount Transistors General Purpose Amplifiers and Switches—PNP MMBT 2904 TO-236 49 60 40 5 MMBT2904A TO-236 (49) 60 40 5 TO-236 (49) 60 MMBT2905A TO-236 (49) 60 MMBT 2906 TO-236 (49) 60 MMBT 2906A TO-236 (49) 60 MMBT 2905
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O-236
mmbt2906a
MMBTL51
MMBT2904A
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ndc7002n
Abstract: No abstract text available
Text: National March 1996 Semiconductor” & NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDC7002N
ndc7002n
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BF244A
Abstract: "N-Channel JFET" bf244c BF244B jfet s00 BF244
Text: " BF244A BF244B BF244C BF244A / BF244B / BF244C uctor D iscrete POWER &. Signal Technologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low capacitance. Sourced from Process 50.
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BF244A
BF244B
BF244C
L501130
"N-Channel JFET"
bf244c
jfet s00
BF244
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