LS T73 Search Results

ALC271X

Abstract: alc271 SY8033 SY8033BDBC ar8132l MP2121 tps51125 AON7408L nav50 ALC271X-GR
Contextual Info: A B C D E PJP1 ZZZ1 PCB D0DAZ@ ZZZ3 ZZZ4 LA-6091P D0DA@ LS-6094P D0DA@ ZZZ5 45@ DCIN DC301008S00 LS-6095P D0DA@ 1 1 ZZZ2 PCB E0DAZ@ ZZZ6 ZZZ8 LA-6091P E0DA@ LS-6096P E0DA@ ZZZ7 LS-6097P E0DA@ ZZZ9 ZZZ10 LS-6098P E0DA@ LS-6099P E0DA@ Compal Confidential 2 2

KB926

Abstract: AC82PM45 LA-5081P tps51620 sis412 kiwa5 la-5081p AC82GM45 NV10M-GS intel GM45 cantiga n10m-ge1-s
Contextual Info: A B C ZZZ ZZZ1 ZZZ2 ZZZ3 PCB LA-5081P LS-5081P LS-5082P D E 1 1 DAZ@ DAZ@ DAZ@ KIWA5/A6 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:1.0 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification

Contextual Info: MITSUBISHI LS Is <DRAM MODULE MH16M9BDJA-5,-6,-7 FAST PAGE MODE 150994944-BIT 16777216-WORD BY 9-BIT) DYNAMIC RAM DESCRIPTION The MH16M9BDJA is 16777216-word by 9-bit dynamic RAM module. That module consists of eight industly 16M x 1 dynamic RAMs in SOJ.

Contextual Info: MITSUBISHI LS Is M5M4V4260TP-7,-8,-7S,-8S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs, PIN CONFIGURATION (TOP VIEW) fabricated with the high performance CMOS process, and is

pin diagram of IC TLC271

Abstract: 7575JN
Contextual Info: ANALOG DEVICES □ FEATURES Fast Conversion Time: 5 j j ls On-Chip Track/Hold Low Total Unadjusted Error: 1LSB Full Power Signal Bandwidth: 50kHz Single + 5V Supply 100ns Data Access Time Low Power 15mW typ Low Cost Standard 18-Pin DIPs or 20-Terminal Surface Mount Packages

Contextual Info: MITSUBISHI LS Is SRAM MODULE . MH5128BBNA-70L,-85L,-10L,-12L/ £ c,no'V A MH5128BBNA-70H,-85H,-10H,-12H 4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM c,o^c ' DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Both side, 2-Layer) The MH5128BBNA is a 4194304-bits CMOS static RAM

burr-brown 710

Abstract: PSR 406
Contextual Info: COMPONENTS BURR-BROUN D CORP b u r r -b l l 7 3 1 3 LS DD1 S S 7 L 5 I _ ' J ' - 1 3 > -~ U \ r o w n I Ö MPY534/883B SERIES MPY534TD/883B MPY534TH/883B MPY534SD/883B MPY534SH/883B REVISION A JANUARY, 1989 Precision Military

ED0B

Abstract: L6450 l64550 microprocessor
Contextual Info: L S I LOGIC CORP 5304804 Ü | L S I 53Q4Ö04 LOGI C DDGDIta 1 LOGIC CORP 90D L64500 M IL-S T D -175 0 A Microprocessor 00962 LSI Logic Corporation 1551 McCarthy Blvd Milpitas CA 95035 408.433.8000 Telex 172153 Preliminary Description The LS I Logic L6 45 0 0 is a monolithic 1 . 5-micron

33G PH DIODE

Abstract: PH 33G diode
Contextual Info: Thn% H E W L E T T 1"UM P A C K A R D 20 MBd High CMR Logic Gate Optocouplers Technical Data HCPL-2400 HCPL-2430 Features Applications Description • High Speed: 40 MBd Typical Data Rate • High Common Mode Rejection: HCPL-2400: 10 kV/|ls at v c m = 300 v Typical

Contextual Info: MITSUBISHI LS Is M 5 M 4 V 4 1 6 J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is

MAX77100

Abstract: IC74 IC-74
Contextual Info: SANYO SEMICONDUCTOR CORP 53E TW OTb T> 0010S31 037 « T S A J r- H4>~ 0 7 — 0 7 MLC74HC76M No.3628 f CMOS High-Speed Standard Logic Dual J-K Flip-Flop with Reset and Set F e a tu re s • The MLC74HC76M consists of 2 identical J-K type flip-flops. • Uses CMOS silicon gate process technology to achieve operating speeds sim ilar to LS-TTL 74LS76

vt237

Abstract: ECG1504 1058 ECG1604
Contextual Info: 17E P H I L I P S E C G INC b t S 3 ‘ïafl"0 Q D S M a S 4 T-73-53 ECG1504 Se m ico n d u cto rs V o ltage Level Ind, Dr, 5-Step Log Open Collector O utputs Features • 5 com parators to digitize logarithm ic analog input sig n a ls in 3-dB step in­ crem ents

hef40668

Abstract: HEF4066BP HEF4066BT HEF4066B HEF4016B HEF4066BD hef4066be
Contextual Info: HEF4066B QU A D R U P L E B IL A T E R A L S W I T C H E S The H E F 4 0 6 6B has fo u r independent b ilateral analogue switches transm ission gates . Each sw itch has tw o in p u t/o u tp u t te rm in a ls (V /Z ) and an active H IG H enable in p u t (E). When E is connected to V q q

HEF4066BP

Abstract: F4066b 4066B
Contextual Info: HE F 4 0 6 6 B gates Q U A D R U P L E B IL A T E R A L S W I T C H E S The H E F 4066B has fo u r independent b ila te ra l analogue switches transm ission gates . Each sw itch has tw o in p u t/o u tp u t te rm in a ls (Y /Z ) and an active H IG H enable in p u t (E). When E is connected to V q q

t7351

Abstract: DD231 T7352 T7351B-FC
Contextual Info: Data Sheet January 1994 microelectronics group Lucent Technologies Bell Labs innovations T7351B/T7352 FDDI/TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution The T7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement

Contextual Info: 7 iqot Preliminary Data Sheet May 1993 m A TaT Microelectronics T7351B FDDI Physical Layer Device Features Description • Single-chip FDDI physical layer PHY solution The T7351B FDDI Physical Layer Device is a single VLSI component that implements the complete fiber

732 LEM

Abstract: lem 718 T7352
Contextual Info: Data Sheet January 1994 % A H s .T ^ ^ ^ M ic ro e le c tro n ic s T7351B FDDI/T7352 TPDDI Physical Layer Devices Features Description • Single-chip FDDI physical layer PHY solution TheT7351B FDDI/T7352 TPDDI Physical Layer Devices are single VLSI components that implement

Contextual Info: Features Fulfills IEC 1036, Class 1 Accuracy Requirements Fulfills IEC 687, Class 0.5 and Class 0.2 Accuracy, with External Temperature Com pensated Voltage Reference Fulfills IEC 1268, Requirements for Reactive Power Sim ultaneous Active, Reactive and Apparent Power and Energy Measurement

3.2768MHz crystal

Abstract: AT73501 32.768Mhz crystal AT90Sxx 258F
Contextual Info: 1 PRELIMINARY
  
     
 

   

 
  

  
 FEATURES Fulfills IEC requirements. 1036, class 1 accuracy Fulfills IEC 687, class 0.5 and class 0.2 accuracy, with external temperature

LSE B10 transformer

Abstract: 3 phase GE analog KWH meter FT500 IEC687 LSE B9 transformer IEC103 3.2768MHz Crystal Poly Phase Energy Meter GE digital KWH meter
Contextual Info: Features Fulfills IEC 1036, Class 1 Accuracy Requirements Fulfills IEC 687, Class 0.5 and Class 0.2 Accuracy, with External Temperature Com pensated Voltage Reference Simultaneous Active, Reactive and Apparent Power and Energy Measurement Power Factor, Frequency, Voltage and Current M easurem ent

Contextual Info: 10 : N + M S (NOTES : L ^ (M A T E R IA L ) ) \ 0 ' J y 0 ‘ (HOUSING) : 46NYL0N , U L94V-0 T73 sP dlI —SAACTUATOR) : PPS , U L94V -0 3 - 5 W I L (TERMINAL) : ( t 0. 3 2 ) PHOS-BRO KAMI : ACsR 0.1cm Li± t - ji4P : HA A 1cm E(l± TitL : =yCmAy=L 1cm T4±

Contextual Info: \ NOV 1 3 1990' AT&T Advance Data Sheet T7351 FDDI Physical Layer Device F eatures • Monolithic FDDI Physical Layer PHY solution ■ ■ Low-power (< 800 mW) CMOS design using single 5 V power supply Byte-wide PHY-MAC (media access control) interface ■

FG3000BV

Abstract: FG3000BV-90
Contextual Info: b4E » m k • 7 2 T 4 b2 1 Q Q O b O D T T73 « P R X FG3000BV s u e r P O WE RE X INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France(43) 72.75.15 Asymmetric

Hp 4619

Abstract: Serial NAND A1225 A1240 A1280 CQFP 256 PIN actel 81H13 actel a1240 A1280-1 2a1280
Contextual Info: SBE AC TEL CORP D • OnEHTb DGDDMGS Mb3 ■ ACT ACT 2 Field Programmable Gate Arrays Features • Up to 8000 Gate Array Gates 20,000 PLD /LC A ™ equivalent gates • Replaces up to 210 T T L Packages • Replaces up to 69 20-Pin PA L Packages • Design Library with over 250 Macros