Untitled
Abstract: No abstract text available
Text: September 2006 LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier General Description Key Specifications The LM4949 is a fully integrated audio subsystem designed for stereo cell phone applications. The LM4949 combines a 2.5W stereo Class D amplifier plus a separate 190mW stereo headphone amplifier, volume control, and input mixer
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LM4949
190mW
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scl 1058 by national
Abstract: smd marking e5 rf LM4949 LM4949TL LS-298 FORMS
Text: LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier General Description Key Specifications The LM4949 is a fully integrated audio subsystem designed for stereo cell phone applications. The LM4949 combines a 2.5W stereo Class D amplifier plus a separate 190mW stereo
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LM4949
LM4949
190mW
scl 1058 by national
smd marking e5 rf
LM4949TL
LS-298 FORMS
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scl 1058 by national
Abstract: No abstract text available
Text: LM4949 LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier Literature Number: SNAS368C LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier General Description Key Specifications The LM4949 is a fully integrated audio subsystem designed
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LM4949
LM4949
SNAS368C
190mW
scl 1058 by national
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LS-298 FORMS
Abstract: smd marking e5 rf LM4949 LM4949TL DB 646
Text: LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier General Description Key Specifications The LM4949 is a fully integrated audio subsystem designed for stereo cell phone applications. The LM4949 combines a 2.5W stereo Class D amplifier plus a separate 190mW stereo headphone amplifier, volume control, and input mixer
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LM4949
LM4949
190mW
CSP-9-111S2)
LS-298 FORMS
smd marking e5 rf
LM4949TL
DB 646
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Untitled
Abstract: No abstract text available
Text: LM4949 www.ti.com LM4949 SNAS368D – SEPTEMBER 2006 – REVISED MAY 2013 Stereo Class D Audio Subsystem with OCL Headphone Amplifier Check for Samples: LM4949 FEATURES DESCRIPTION • • • • • • • • The LM4949 is a fully integrated audio subsystem
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LM4949
SNAS368D
32-step
25-Bump
LM4949
190mW
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Untitled
Abstract: No abstract text available
Text: USB3319 Hi-Speed USB Transceiver with 1.8V ULPI Interface - 13MHz Reference Clock PRODUCT FEATURES Datasheet USB-IF “Hi-Speed” compliant to the Universal Serial Bus Specification Rev 2.0 Interface compliant with the ULPI Specification revision 1.1 as a Single Data Rate SDR PHY
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USB3319
13MHz
USB3319
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Untitled
Abstract: No abstract text available
Text: USB3316 Hi-Speed USB Transceiver with 1.8V ULPI Interface - 19.2MHz Reference Clock PRODUCT FEATURES Datasheet USB-IF “Hi-Speed” compliant to the Universal Serial Bus Specification Rev 2.0 Interface compliant with the ULPI Specification revision 1.1 as a Single Data Rate SDR PHY
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USB3316
USB3316
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SMD 43A
Abstract: TRANSISTOR SMD 9bb IRHNA7260 IRHNA8260
Text: Provisional Data Sheet No. PD-9.1397 IRHNA7260 IRHNA8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.070Ω International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
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IRHNA7260
IRHNA8260
SMD 43A
TRANSISTOR SMD 9bb
IRHNA7260
IRHNA8260
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Untitled
Abstract: No abstract text available
Text: USB3311 Hi-Speed USB Transceiver with 1.8V ULPI Interface - 26MHz Reference Clock PRODUCT FEATURES Datasheet USB-IF “Hi-Speed” compliant to the Universal Serial Bus Specification Rev 2.0 Interface compliant with the ULPI Specification revision 1.1 as a Single Data Rate SDR PHY
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USB3311
26MHz
USB3311
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IRHNA7260
Abstract: IRHNA8260 smd 43a
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1397 IRHNA7260 IRHNA8260 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL MEGA RAD HARD Ω , MEGA RAD HARD HEXFET 200 Volt, 0.070Ω International Rectifier’s RAD HARD technology
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IRHNA7260
IRHNA8260
IRHNA7260
IRHNA8260
smd 43a
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Untitled
Abstract: No abstract text available
Text: FQB47P06 / FQI47P06 P-Channel QFET MOSFET -60 V, -47 A, 26 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQB47P06
FQI47P06
FQI47P06
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pdcr 910
Abstract: DRUCK pdcr 910 druck pdcr 250 PDCR 910 series PDCR 910 druck PTX 1400 PDCR 810 pdcr druck sensor PTX1400 Ex97D2058
Text: Issued September 2000 232-5244 Data Pack E Pressure transducers and instrumentation Data Sheet Two ranges of silicon diaphragm gauge pressure transducers, one with a built-in reference tube and one with an integral ventilated cable. The reference tube type allows transducers to be remotely
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ca075%
pdcr 910
DRUCK pdcr 910
druck pdcr 250
PDCR 910 series
PDCR 910 druck
PTX 1400
PDCR 810
pdcr druck sensor
PTX1400
Ex97D2058
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IRHE7110
Abstract: IRHE7130 IRHE8110 IRHE8130
Text: PD - 90732B IRHE7110 IRHE8110 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 100Volt, 0.60Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90732B
IRHE7110
IRHE8110
100Volt,
1x106
IRHE7110
IRHE7130
IRHE8110
IRHE8130
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IRH7250
Abstract: IRH8250
Text: PD - 90697B IRH7250 IRH8250 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA HARD RAD 200Volt, 0.11Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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90697B
IRH7250
IRH8250
200Volt,
1x106
IRH7250
IRH8250
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Untitled
Abstract: No abstract text available
Text: LM 4949 LM4949 Stereo Class D Audio Subsystem with OCL Headphone Amplifier Te x a s In s t r u m e n t s Literature Number: SNAS368C tt Sem iconductor LM4949 ^Boomer Audio Power Am plifier Series Stereo Class D Audio Subsystem with OCL Headphone Am plifier
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LM4949
SNAS368C
LM4949
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CA3013
Abstract: No abstract text available
Text: R a d io /C o m m u n ic a tio n C ir c u it s _ CA3013, CA3014 Wide-Band Amplifier Discriminators Features & Applications: • Exceptionally high gain: power gain at 4.5 MHz - 75 dB typ. m Excellent limiting characteristics input limiting voltage knee
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CA3013,
CA3014
CA3013
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21134 015
Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Text: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz
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NE38018
NE38018-T1
NE38018-T2
21134 015
nec K 3570
T 318 TE 2395
marking v67
of ic ST 4051
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HD44233
Abstract: HD44234
Text: HD44233P, HD44234P-Single Chip CODEC with Filters COMBO Features • Single Chip C M O S C O D EC with Filter In 16-pins D IL Package • Power Supply Voltage+5 V + 5%, Low Power D isslpation (50 mW Typ) • Follows A-Law (HD44233P) • Follows (i-Law (HD44234P)
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HD44233P,
HD44234P------Single
16-pins
HD44233P)
HD44234P)
HD44234P
HD44234P
HD44233
HD44234
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Untitled
Abstract: No abstract text available
Text: HD44237P, HD44238P Single Chip CODEC with Filters COMBO Features • • Single Chip CMOS CODEC with Filter in 16-pins DIL Package Power Supply Voltage ± 5 V ± 5%, Low Power Dissipation (50 mW typ) • Follows A-Law (HD44237P)/|i-law(HD44238P) • - Exceeds CCITT and D4 Specifications
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HD44237P,
HD44238P
16-pins
HD44237P
HD44238P)
HD44237P/HD44238P
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DIODE cd c318
Abstract: Application of irf840 inverter irf840 K 2611 MOSFET IRF840 application Switching Application of irf840 C322 diode SWB45 ST C318 IRF841
Text: HE 0 I M Ô 5 54 5 5 INTERNATIONAL aCIOöSbä 2 | Data Sheet No. PD-9.376G RECTIFIER - { 3 INTERNATIONAL RECTIFIER TOR REPETITIVE AVALANCHE AND dv/dt RATED* IRF840 IRF841 IRF842 IRF843 HEXFET TRANSISTORS N-CHANNEL Product Summary 500 Volt, 0.85 Ohm HEXFET
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Mfl55455
IRF841
O-220AB
C-324
DIODE cd c318
Application of irf840
inverter irf840
K 2611 MOSFET
IRF840 application
Switching Application of irf840
C322 diode
SWB45
ST C318
IRF841
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irf740 spice model
Abstract: IRF740
Text: HE D I 4âSS452 QÛ0ÔS44 0 | Data Sheet No. PD-9.375G INTERNATIONAL RECTIFIER T INTERNATIONAL. RECTIFIER l O R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74Ì IRF742 N-CHANNEL IRF743 Product Summary 400 Volt, 0.55 Ohm HEXFET T0-220AB Plastic Package
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SS452
IRF740
IRF74Ã
IRF742
IRF743
T0-220AB
IRF741
C-299
irf740 spice model
IRF740
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Untitled
Abstract: No abstract text available
Text: International \IQR}Rectifier Provisional Datasheet No. PD-9.1397 REPETITIVE AVALANCHE AND dv/dt RATED IR H N A7260 IR H N A 8260 HEXFET T R A N S IS T O R N-CHANNEL MEGA RAD HARD 200 Volt, 0.070Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology
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A7260
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A1237AR
Abstract: LS 820 audio amp CX20037A CXA1237AR Comparator IC LM 324 IN104
Text: SONY, C X 2 0 0 3 7 A / C X A 1 2 3 7 A R Audio Signal Processing for VTR_ _ |For the availability of this product, please contact the sales office' Description CX20037A/CXA1237AR is a bipolar IC which has been developed for the processing of VTR audio signals,
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CX20037A/CXA1237AR
CX20037A/CXA1237AR
CX20037A
CXA1237AR
10mVp-p)
60kHz)
QFP-48P-L04
A1237AR
LS 820 audio amp
Comparator IC LM 324
IN104
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Untitled
Abstract: No abstract text available
Text: International S R ectffier Preliminary Data Sheet No. PD-9.1332 IRHM7260 IRHM8260 REPETITIVE AVALANCHE ANO dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EGA RAD HARD 200Volt, 0.070ft, MEGA RAD HARD HEXFET International Rectifier’s RAD H ARD technology
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IRHM7260
IRHM8260
200Volt,
070ft,
55MS2
500X1
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