rs flip-flop IC 7400
Abstract: 74ls105 TTL LS 7400 74LS series logic gates 7400 fan-out 74LS 3 input AND gate IC TTL 7400 schematic 74LS04 fan-out 74ls series logic family 90 watts inverter by 12v dc with 6 transisters
Text: GENERAL DESCRIPTION ABSOLUTE MAXIMUM RATINGS Ovar operating free-air temper ature range unless otherwise noted Supply Voltage Vq c (See Note 1) Input Voltage V|n (See Note 1) Interemitter Voltage (See Note 2) Resistor Node Voltage, 54121, 74121 (See Note 1)
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IC 7410
Abstract: 7410 JRC IC 7430 IC 7420 IC 7400 nand OF IC 7410 7410 ic ls 7400 hc 7400 7410 1c
Text: - 25- Triple 3 Input NAND 7410 Vcc 1C IV ac 38 3A 3Y ninininiLriiniriif ft IB 2A 2B 2C 2Y GND O Y = A •B •C 74S10 N LS ALS ALSK F S AS AC max L-*H T 22 15 11 8 6 4.5 4.5 11.1 12. 3,24 30 ns tpd max H—»L 1 15 15 10 7 5. 3 5 4.5 11.1 12.3 24 30 ins IN
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ls 7400
Abstract: 7400 ls 74LS00 CI 7400 74H00 CT7400 CT5400 CT54 a 741 j ITT 7400
Text: C T 5 4 /7 4 ,C T 5 1 /7 4 H , € 1 5 4 /7 4 8 ,0 1 5 4 /7 4 1 .8 P3 2 i l A ^ 1 h l C T 5 4 0 0 /C T 7 4 0 0 C T54SO O /C T 74SO O C T 5 4 H 0 0 /C T 7 4 H 00 C T 54LSO O /C T74LSO O ili 2 na V5) (JÌ (10) m n o t i ? « > , # # 5 4 . 7 4 00, W '74H 0 0 . 54 .' 74X00, fa54 74 t-S(H)K «•«*«&!$$
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CT54/74
CT51/74H,
CT5400/CT7400
CT54SOO/CT74SOO
CT54HOO/CT74HOO
-74LS0oMÂ
/CT7400
CT54H00/CT74HOO
CT54SOO/CT74SOO
CT54LS00/CT74LS00
ls 7400
7400 ls
74LS00
CI 7400
74H00
CT7400
CT5400
CT54
a 741 j
ITT 7400
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ls 7400
Abstract: ls 7404 7410 JRC HC 7404 hc 7400 7404 ls TTL 7404 7400 hc 7404 74LS04 NOT gate
Text: 7404 - 19- Hex Inverters 74LS04 « 0 * tpd max tpd A ?] IN 74S04 Util OH N LS ALS ALSK F S AS AC ACT HC HCU HCT L-»H t 22 15 11 7 4. 5 5 5 .9 8 .5 23 19 24 23 19 24 1 max 6 8 .5 8 6 5 .3 5 4 5 .9 2 .4 1.1 3 4 .2 24 4.8 0 .0 4 0 .0 4 0 .0 2 0.02 0.0 2 oA
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74LS04
ls 7400
ls 7404
7410 JRC
HC 7404
hc 7400
7404 ls
TTL 7404
7400 hc
7404
74LS04 NOT gate
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Untitled
Abstract: No abstract text available
Text: APT5010LVFR A dvanced pow er Te c h n o lo g y 5 0 0 V POWER MOS V 4 7 A 0 .1 0 0 Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5010LVFR
O-264
APT5010LVFR
-10mS
-100mS
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sm 126 ao 570
Abstract: No abstract text available
Text: A d P O T e v a W c n E h c e A d P T 5 1 J V F R R n o l o g y 5 POWER MOS V v 4 4 0 . 1 a o o q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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O-264
APT5010JVFR
E145592
sm 126 ao 570
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Untitled
Abstract: No abstract text available
Text: • r A d van c ed W :Æ P ow er jàÊM Tec h n o lo g y APT501OLVR soov 47a 0.1ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT501OLVR
O-264
APT5010LVR
5r182
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APT5010
Abstract: No abstract text available
Text: • R W 'æ APT501OJVR A dvanced pow er Te c h n o l o g y ' soov 44a o .i o o q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT501OJVR
OT-227
APT5010JVR
E145592
APT5010
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TTL SN 54S00
Abstract: No abstract text available
Text: SN5400, SN54LS00, SIU54S00, SN7400, SN74LS00, SN74S00 QUADRUPLE 2 INPUT POSITIVE NAND GATES D E C E M B E R 1 9 8 3 - R E V IS E D M A R C H 1 988 Package Options Include Plastic "Small Outline" Packages, Ceramic Chip Carriers and Flat Packages, and Plastic and Ceramic
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SN5400,
SN54LS00,
SIU54S00,
SN7400,
SN74LS00,
SN74S00
54LS00,
54S00
74LS00,
74S00
TTL SN 54S00
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W .\A APT5010B2VR pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V‘ P ow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®
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APT5010B2VR
O-247
APT5010B2VR
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CCO-40
Abstract: APT5010LVR 250DS
Text: APT501OLVR • R A dvanced W .\A pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT501OLVR
O-264
APT5010LVR
CCO-40
250DS
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PDF
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Untitled
Abstract: No abstract text available
Text: • R A dvanced r M po w er Tec h n o lo g y APT5012WVR 500v 40a 0.120Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT5012WVR
APT5012W
O-267
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ls 7400 n
Abstract: No abstract text available
Text: APT5010B2VFR • R A dvanced W .\A pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect, increases packing d ensity and reduces the on-resistance. Power M OS V®
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APT5010B2VFR
O-247
ls 7400 n
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Untitled
Abstract: No abstract text available
Text: • R A dvanced r M po w er Tec h n o lo g y APT501OJ VR soov44a o.-iooq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT501OJ
soov44a
OT-227
APT5010JVR
E145592
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Untitled
Abstract: No abstract text available
Text: New Product VS-175BGQ030HF4 www.vishay.com Vishay Semiconductors Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode • Ultralow forward voltage drop • Continuous high current operation
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VS-175BGQ030HF4
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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25C5250
Abstract: No abstract text available
Text: • R A dvanced W .\A APT501OLVFR pow er Te c h n o lo g y " 500v POWER MOS V 47a 0.1 ooq FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT501OLVFR
O-264
25C5250
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TTL 7400
Abstract: 7400 TTL earom TTL 7400 data sheet D9 DG transistor VSS28
Text: I Preliminary Data Sheet 2811 8192-BIT EAROM MEMORY NCR CORPORATION M ICRO ELECTRONICS DIVISION 8181 BYERS ROAD M IAM ISBURG , OHIO 45342 I (513) 866-7471 TLX 28-8010 NCRM ICRO, MSBG Electrically alterable ROM MNOS P-channel technology S T A N D A R D 2 4 PIN S ID E B R A Z E D IP
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8192-BIT
11-Bit
TTL 7400
7400 TTL
earom
TTL 7400 data sheet
D9 DG transistor
VSS28
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irf 540 mosfet
Abstract: IRFM064
Text: PD - 90875A POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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0875A
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
IRFM064
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Untitled
Abstract: No abstract text available
Text: International lo g Rectifier HEXFET Power MOSFET • • • • • • • 4855452 PD-9.754 Q 01S454 318 H I N R IRFP064 INTERNATIO NAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance
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01S454
IRFP064
O-247
levFP064
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irf 540 mosfet
Abstract: ls 7400 PD908 014 IR MOSFET Transistor IRFM064
Text: PD-90875C POWER MOSFET THRU-HOLE TO-254AA IRFM064 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM064 RDS(on) 0.017 Ω ID 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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Original
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PD-90875C
O-254AA)
IRFM064
O-254AA.
MIL-PRF-19500
irf 540 mosfet
ls 7400
PD908
014 IR MOSFET Transistor
IRFM064
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AN541
Abstract: AN5416 AN5415
Text: T b tr ^ ic A N 5 4 1 ti? — x AN5415. AN5416 5 , A N 5 4 U 1 6 /C o lo r T V D eflectio n C ircu its • « * AN5415. AN54I6 ¡ t * 9 - T u » m i: » f l in t ■ n m • k B a tttH W H » * -.-, i n fc S in y » !r » H * • * « * £ * » . Aft r >1vYtzMiX'&iLnmm.
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AN5415.
AN5416
AN541
AN54I6
AN541
Veci-12V.
AN5415
AN5416
AN5415
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ALU IC 74181
Abstract: ALU IC 74181 FUNCTION TABLE IC 74181 BTS18 ALU IC 74181 circuit IC 74181 alu 8 bit barrel shifter 7400 fan-out IC 7400 truth table IC 7400 nand gate
Text: 7- c o r p o r a t io n c . _ Silicon-Gate L L 5 0 0 0 S e r ie s Loaic Arrays O u ^ •J00941 C -S L- r , General The LL5000 series of silicon-gate HCMOS logic arrays from LSI LOGIC CORPORATION exhibits bipolar speeds, while at the same time, offers low power
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LL5000
J00941
32-Bit
16-Bit
12x12
ALU IC 74181
ALU IC 74181 FUNCTION TABLE
IC 74181
BTS18
ALU IC 74181 circuit
IC 74181 alu
8 bit barrel shifter
7400 fan-out
IC 7400 truth table
IC 7400 nand gate
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irfp064 driver circuit
Abstract: IRFP064 IRFP064 APPLICATION ls 7400 SiHFP064
Text: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP064,
SiHFP064
O-247
O-247
18-Jul-08
irfp064 driver circuit
IRFP064
IRFP064 APPLICATION
ls 7400
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PDF
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irfp064 driver circuit
Abstract: IRFP064 IRFP064 APPLICATION
Text: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated
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Original
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IRFP064,
SiHFP064
O-247
O-247
18-Jul-08
irfp064 driver circuit
IRFP064
IRFP064 APPLICATION
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