LRP PACKAGE PACKAGE Search Results

HRF22

Abstract: Hitachi DSA00358
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22

HRF32

Abstract: Hitachi DSA00358 Hitachi DSA0035
Contextual Info: HRF32 Silicon Schottky Barrier Diode for Rectifying ADE-208-164D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF32 32 LRP Outline 1 32

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

F 82 bp

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter Features Outline • Wide spectrum from 1.88 V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

HZF10

Abstract: HZF6.8 ADE-208-129B
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

HZF22BP

Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

ADE-208-129

Abstract: BP 34 hzf15bp HZF10 HZF11BP HZF22BP HZF7.5 HZF6.8 HZF36 HZF20
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129 Z Preliminary Rev. 0 Aug. 1993 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

HZF10

Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208- 129B Z Rev 2 Features • W ide spectrum from • 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

LRP PACKAGE

Abstract: CP4020 HZF Series
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

HZF16BP

Abstract: code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.

BP 34 datasheet

Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
Contextual Info: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Jul. 1997 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.

1SS106

Abstract: 1SS119 1SS172 1SS108
Contextual Info: Type No. Page Package code Type No. P*9 Package ootte Type No. Page Package code 1S1146 6 DO-35 HRW0503A 1S2074® 6 DO-35 HRWO702A 1S2075® 6 DO-35 HRW0703A 7 MPAK HSU277 5 URP 1S2076 6 DO-35 HRW1002A 7 LDPAK © HVB14S 5 CM PAK 1S2076A 6 DO-35 HRW1002A ©

1SS106

Abstract: pin diode do35 HSM8 HSM126S DO-35 rectifier HVU12 lld zener HSK277 SMD DIODE 1N4148 PACKAGE hsu277
Contextual Info: Package Wise Guide Switching Diode Signal Processing Plastic SMD1 Application MPAK Highspeed switching HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C High voltage switching HSM83 Glass SMD2 Insertion Type URP DO-35 MHD LLD 1N4148 1 S 2 0 7 4 '1 1S2075 *1

Hitachi DSA0077

Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information

Contextual Info: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.

Contextual Info: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 40V, I0 = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information

Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for V r =40V, Io=1.0A, Output voltage=6Vmax. • LRP structure ensures higher reliability. Cathode mark

Contextual Info: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 90V, I0 = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information

Hitachi DSA001653

Contextual Info: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 90V, IO = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information

LRP package PACKAGE

Abstract: lazer
Contextual Info: ADE-208-164C Z HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for V r=90V, Io=1.0A, Output voltage=12Vmax. • LRP structure ensures higher reliability. Cathode mark

UMN6450X

Contextual Info: HALL EFFECT VANE SWITCH A rugged magnetically activated Hall-effect vane switch, the UMN6450X can directly replace less robust optical equivalents. Ideal for critical applications requiring the ability to withstand hostile electrical, chemical and mechanical environments, each vane switch is housed in

Hitachi DSA001653

Contextual Info: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 40V, IO = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information

DIODE ED 34

Abstract: 1N4446 1N4446M LL4446
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4446 1N4446M LL4446 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n