Y1416
Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information
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AND8004/D
14xxx
Y1416
vk sot-363
LCX00
AND8004
MC74HC04ADR2
ASE CHUNGLI
date code marking
"marking Code" V2
MX marking code sot23
marking a6 sot363
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marking codes fairchild
Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to
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AND8004/D
14xxx
r14525
AND8004/D
marking codes fairchild
SOT-363 a7
wz 74 marking
SOT-363 MARKING WF
marking 324 tssop 16
vk sot-363
On Semiconductor Logic Data Code and Traceability
marking code cp
SOT-363 A1 marking codes
ON TSOP6 MARKING 6L
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marking codes fairchild
Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to
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AND8004/D
r14525
marking codes fairchild
HEP08
fairchild marking codes sot-23
TOREX TOP CODE
AND8004
t324
SOT-353 A7
marking L5 sot363
xaa643
and8004 D
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wz 74 marking
Abstract: t138a V = Device Code
Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G02
MC74HC
353/SC
wz 74 marking
t138a
V = Device Code
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marking t132
Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G08
353/SC
marking t132
marking code V6 diode
V = Device Code
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vsop8 package outline
Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
Text: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G09
vsop8 package outline
vsop8
V = Device Code
SOT 363 marking CODE LA
marking h8
Wafer Fab Plant Codes ST
marking 62 ON Semi
diode Marking code v3
hep08
marking code vhc
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H2D MARKING CODE
Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G08
MC74HC
353/SC
H2D MARKING CODE
marking code V6 DIODE
V = Device Code
H2D Marking
diode Marking code v3
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marking CODE W2D
Abstract: marking w2d
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
353/SC
marking CODE W2D
marking w2d
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Wafer Fab Plant Codes ST
Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G32
MC74HC
353/SC
Wafer Fab Plant Codes ST
V = Device Code
T138-A
marking 563 fairchild
ALPHA NEW YEAR DATE CODE
marking t132
marking sbn
DIODE M7 SMP
HEP08
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V = Device Code
Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS
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MC74VHC1GT50
V = Device Code
GATE MARKING CODE VX SOT23
AND8004
AND8004/D
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V = Device Code
Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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MC74VHC1GT32
V = Device Code
diode Marking code v3 on semi
aa sot353
TOREX TOP CODE
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PC 74 HCT 32 P
Abstract: U-046 V = Device Code
Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low
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MC74VHC1G01
PC 74 HCT 32 P
U-046
V = Device Code
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marking H5 sot 23-5
Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G132
marking H5 sot 23-5
vsop8 package outline
sot 23-5 marking code H5
date code marking toshiba Nand
Wafer Fab Plant Codes ST
"package marking code" 162
marking code vt SOT 23-5
sot 23-5 marking code 162
soic 8 marking code
V = Device Code
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74VHC1GT14
Abstract: ON Semiconductor marking marking h2 SOT353 SOT-353 MARKING VL marking SBN SOT23 MARKING CODE T14 SOT23 diode marking L5 sot363 marking code V6 diode marking code v6 SOT23 H2 sc88a
Text: MC74VHC1GT14 Schmitt-Trigger Inverter / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while
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MC74VHC1GT14
74VHC1GT14
ON Semiconductor marking
marking h2 SOT353
SOT-353 MARKING VL
marking SBN SOT23
MARKING CODE T14 SOT23
diode marking L5 sot363
marking code V6 diode
marking code v6 SOT23
H2 sc88a
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V = Device Code
Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
Text: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74VHC1G04
353/SC
V = Device Code
marking code vk, sot-353
GATE MARKING CODE VX SOT23
wz 74 marking
fairchild marking codes sot-23
marking code vk, sot-363
marking code V6 diode
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V = Device Code
Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
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MC74VHC1G05
V = Device Code
diode Marking code v3
ALPHA NEW sot YEAR DATE CODE
051 MPC
AND8004
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AND8004/D
Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G00
MC74HC
353/SC
AND8004/D
V = Device Code
date code marking toshiba Nand
PIN DIODE MARKING CODE wk
marking sbn
h1d marking
AND8004
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t08 sot-23
Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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MC74VHC1GT08
t08 sot-23
ON Semiconductor marking
V = Device Code
marking L5 sot363
vk sot-363
marking codes fairchild 61
vk sot-353
on alpha year and work week
SOT-353 MARKING w5
diode Marking code v3
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T138A
Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1GU04
MC74HC
353/SC
T138A
U04 fairchild
Wafer Fab Plant Codes ST
PIN DIODE MARKING CODE wk
U04 fairchild MARKING
ALPHA NEW YEAR DATE CODE
DIODE M7 SMP
marking code vhc
V = Device Code
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MC74HC
Abstract: marking t132 marking code V6 diode V = Device Code
Text: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G04
MC74HC
353/SC
marking t132
marking code V6 diode
V = Device Code
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SOT23 "Marking Code" t04
Abstract: marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode
Text: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1GT04
SOT23 "Marking Code" t04
marking L5 sot363
marking h2 SOT353
ON Semiconductor marking
V = Device Code
sot363 marking code ca
marking 62 ON Semi
34 sot363
t04 sot 23
marking code V6 diode
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Untitled
Abstract: No abstract text available
Text: TC554161FIL-70L/85L PRELIMINARY SILICON GATE CMOS Standard sMtir. RAM TOSHIBA 262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL is a 4,194,304 bit static random access memory organized as 262,144 words by 16 bits using C M O S technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high_speed and low
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TC554161FIL-70L/85L
TC554161FTL
10mA/MHz
TC554161
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC 554161FTL/TR L-70I785L/10L SILICON GATE CMOS PRELIMINARY 262,144 WORD x 16 BIT STATIC RAM Description TheTC554161FTLyTRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an
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554161FTL/TR
L-70I785L/10L
TheTC554161FTLyTRL
10mA/MHz
TC554161FTL/TRL
TC554161FTL/TRL-70L/85L/1OL
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MSM51V18160A
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V18160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V18160A is a 1,048,576-w ord x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V18160A achieves high integration, high-speed operation, and lowpow er consumption due to quadruple polysilicon double metal CMOS. The MSM51V18160A is
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MSM51V18160A
576-Word
16-Bit
MSM51V18160A
42-pin
50/44-pin
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