MT29C4G48MAZBBAKQ-48 IT
Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)
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168-Ball
MT29C4G48MAZBBAKQ-48
MT29C4G96MAZBBCJG-48
MT29C8G96MAZBBDJV-48
09005aef855512a5
168ball
MT29C4G48MAZBBAKQ-48 IT
MT29C8G96MAZBBDJV-48 IT
mt29c4g96
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PDF
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MT29F4G08ABA
Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,
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Original
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168-Ball
MT29C4G48MAYBAAKQ-5
MT29C4G48MAZBAAKQ-5
MT29C4G96MAYBACJG-5
MT29C4G96MAZBACJG-5
MT29C8G96MAYBADJV-5
MT29C8G96MAZBADJV-5
MT29F4G08ABA
MT29C4G48
ELPIDA LPDDR2 POP
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PDF
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MT29F4G08ABA
Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,
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Original
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168-Ball
MT29C4G48MAYBAAKQ-5
MT29C4G48MAZBAAKQ-5
MT29C4G96MAYBACJG-5
MT29C4G96MAZBACJG-5
MT29C8G96MAYBADJV-5
MT29C8G96MAZBADJV-5
MT29F4G08ABA
MT29F4G08A
MT29F8G08A
MT29F4G08AB
MT29F4G08ABAD
MT29C
MT29F16G08A
Micron MT29F8G08
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PDF
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LPDDR2 PoP
Abstract: LPDDR2 micron lpddr2 lpddr2 datasheet 216-ball LPDDR lpddr2 nand mcp Micron 512MB nand FLASH 136-Ball 168-ball LPDDR Micron NAND
Text: A Perfect Match for Matchless Performance Micron Multichip Packages Form Factor, Speed, Power. Choose All That Apply. Form factor, speed, power—your mobile customers want all three. With Micron’s MCPs, you can respond to customers’ everincreasing demands without compromising leading-edge performance. Mix and match devices, configurations, and package
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PDF
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Micron Technology
Abstract: No abstract text available
Text: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
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20Note/DRAM/TN4102
TN-41-04:
TN-41-13:
TN-46-02:
TN-46-06:
TN-46-11:
TN-46-14:
TN-47-19:
TN-47-20:
Micron Technology
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PDF
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movinand
Abstract: samsung 32GB Nand flash MLC memory Samsung 8Gb MLC Nand flash Flex-OneNAND Samsung Samsung 16GB Nand flash oneDRAM OneNAND Samsung 32Gb Nand flash SAMSUNG moviNAND samsung 2GB Nand flash
Text: Samsung Fusion Semiconductors Samsung Fusion Memory Software Flash DRAM The Next-Generation Technology for High-Performance Mobile Applications SRAM Logic What is Fusion Memory? As consumers continue their insatiable demand for higher-performance, ever-smaller
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BR-07-MEM-001
movinand
samsung 32GB Nand flash MLC memory
Samsung 8Gb MLC Nand flash
Flex-OneNAND Samsung
Samsung 16GB Nand flash
oneDRAM
OneNAND
Samsung 32Gb Nand flash
SAMSUNG moviNAND
samsung 2GB Nand flash
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PDF
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NT6TL32M
Abstract: No abstract text available
Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS, is transmitted/received with data, to be used in capturing data at the receiver
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512Mb
NT6TL16M32AQ/
NT6TL32M16AQ
NT6TL32M
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PDF
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hynix lpddr2
Abstract: Elpida LPDDR2 Memory elpida lpddr2 ELPIDA mobile dram LPDDR2 lpddr2 spec lpddr2 spec HYNIX LPDDR2 1Gb Memory LPDDR2 SDRAM hynix hynix lpddr2 sdram samsung lpddr2
Text: 512Mb LPDDR2-S4 SDRAM NT6TL16M32AQ/ NT6TL32M16AQ Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS, is transmitted/received with data, to be used in capturing data at the receiver
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Original
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512Mb
NT6TL16M32AQ/
NT6TL32M16AQ
hynix lpddr2
Elpida LPDDR2 Memory
elpida lpddr2
ELPIDA mobile dram LPDDR2
lpddr2 spec
lpddr2 spec HYNIX
LPDDR2 1Gb Memory
LPDDR2 SDRAM hynix
hynix lpddr2 sdram
samsung lpddr2
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PDF
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hynix lpddr2
Abstract: ELPIDA mobile dram LPDDR2 Elpida LPDDR2 Memory hynix lpddr2 sdram lpddr2 DQ calibration Hynix 4Gb LPDDR2 LPDDR2 SDRAM hynix NT6TL64M32AQ -G1 lpddr2-s2 LPDDR2 1Gb Memory
Text: 2Gb LPDDR2-S4 SDRAM NT6TL64M32AQ Feature Options Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS, /DQS is transmitted/received with data, to be used in capturing data at the receiver Differential clock inputs (CK and /CK)
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NT6TL64M32AQ
-64Meg
64M32
-168-ball
hynix lpddr2
ELPIDA mobile dram LPDDR2
Elpida LPDDR2 Memory
hynix lpddr2 sdram
lpddr2 DQ calibration
Hynix 4Gb LPDDR2
LPDDR2 SDRAM hynix
NT6TL64M32AQ -G1
lpddr2-s2
LPDDR2 1Gb Memory
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PDF
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NT6TL128M32AQ-G1
Abstract: NT6TL256T32 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 NT6TL128M32 hynix lpddr2 NT6TL128T64AR-G0 NT6TL256 NT6TL128T64AR-G1I NT6TL256T32AQ-G2
Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver
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NT6TL128M32AI
/NT6TL256T32AQ
NT6TL256T32AS/NT6TL128T64AR
NT6TL128M32AQ-G1
NT6TL256T32
NT6TL256T32AQ-G1
NT6TL128M32AQ-G0
NT6TL128M32
hynix lpddr2
NT6TL128T64AR-G0
NT6TL256
NT6TL128T64AR-G1I
NT6TL256T32AQ-G2
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PDF
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NT6TL256T32AQ
Abstract: NT6TL128M32AI hynix lpddr2 NT6TL128M32AQ-G1 LPDDR2 1Gb Memory NT6TL128M32 Hynix 4Gb LPDDR2 NT6TL256T32AQ-G1 NT6TL128M32AQ-G0 Elpida LPDDR2 Memory
Text: 4Gb/8Gb LPDDR2-S4 SDRAM NT6TL128M32AI Q /NT6TL256T32AQ NT6TL256T32AS/NT6TL128T64AR(3/5) Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe (DQS, ) is transmitted/received with data, to be used in capturing data at the receiver
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Original
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NT6TL128M32AI
/NT6TL256T32AQ
NT6TL256T32AS/NT6TL128T64AR
NT6TL256T32AQ
hynix lpddr2
NT6TL128M32AQ-G1
LPDDR2 1Gb Memory
NT6TL128M32
Hynix 4Gb LPDDR2
NT6TL256T32AQ-G1
NT6TL128M32AQ-G0
Elpida LPDDR2 Memory
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46LD16160A IS43/46LD32800A 256Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION JULY 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O
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Original
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IS43/46LD16160A
IS43/46LD32800A
256Mb
10MHz
533MHz
20Mbps
1066Mbps
temperaturD16160A-3BLA2
IS46LD32800A-3BLA2
IS46LD16160A-25BLA2
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PDF
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46LD16640A
Abstract: LPDDR2 SDRAM
Text: IS43/46LD16640A IS43/46LD32320A 1Gb x16, x32 Mobile LPDDR2 S4 SDRAM AUGUST 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O
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IS43/46LD16640A
IS43/46LD32320A
10MHz
400MHz
20Mbps
IS46LD32320A-3BLA2
IS46LD32320A-3BPLA2
IS46LD16640A-25BLA2
IS46LD32320A
-25BLA2
46LD16640A
LPDDR2 SDRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46LD16320A IS43/46LD32160A 512Mb x16, x32 Mobile LPDDR2 S4 SDRAM ADVANCED INFORMATION APRIL 2014 FEATURES description • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O
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Original
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IS43/46LD16320A
IS43/46LD32160A
512Mb
10MHz
533MHz
20Mbps
1066Mbps
temperatu6320A-3BLA2
IS46LD32160A-3BLA2
IS46LD16320A-25BLA2
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PDF
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm
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512Mb:
MT42L32M16D1
09005aef8467caf2
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PDF
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LPDDR2-1066
Abstract: micron lpddr2 lpddr2 DQ calibration LPDDR2 SDRAM micron MT42L128M64D4 lpddr2 MT42L64M64D2 micron LPDDR2 X32 LPDDR2 SDRAM mt42L128M64D
Text: 2Gb: x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L64M64D2, MT42L128M64D4, MT42L96M64D3 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 32 x 8 banks x 2 die – 8 Meg x 32 x 8 banks x 3 die – 8 Meg x 32 x 8 banks x 4 die
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Original
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MT42L64M64D2,
MT42L128M64D4,
MT42L96M64D3
240-ball
09005aef84645b7c
LPDDR2-1066
micron lpddr2
lpddr2 DQ calibration
LPDDR2 SDRAM micron
MT42L128M64D4
lpddr2
MT42L64M64D2
micron LPDDR2 X32
LPDDR2 SDRAM
mt42L128M64D
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type
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Original
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512Mb
MT42L32M16D1,
MT42L32M32D2,
MT42L16M32D1
121-ball
134-ball
168-ball
09005aef84d56533
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
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Original
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512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
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Original
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512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
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PDF
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MT42L16M32
Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
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512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
MT42L16M32
MT42L16M32D
MT42L32M16D1
MT42L32M16D
PS 229
LPDDR2 PoP
LPDDR2 DRAM
LPDDR2-1066
Micron LPDDR2
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PDF
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MT42L16M32D1
Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
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Original
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512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
7600B
Dynamic Memory Refresh Controller
LPDDR2-1066
121ball
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PDF
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MT42L32M32D2
Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks
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Original
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512Mb
MT42L32M16D1,
MT42L32M32D2,
MT42L16M32D1
09005aef84d56533
MT42L32M32D2
micron lpddr2
LPDDR2 SDRAM
LPDDR2 SDRAM micron
MT42L32M32
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PDF
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Untitled
Abstract: No abstract text available
Text: 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type
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Original
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512Mb
MT42L32M16D1,
MT42L32M32D2,
MT42L16M32D1
121-ball
134-ball
09005aef84d56533
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PDF
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