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SICK AG GL6L-P7212 Laser Sensor, 12M, Pnp, 30Vdc Rohs Compliant: Yes \|Sick GL6L-P7212
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	GL6L-P7212	Bulk			1	1 $351.07 10 $273.7 100 $227.67 1000 $227.67 10000 $227.67	Buy Now
Others TLP721FD4GRTP4M INSTOCK
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Chip 1 Exchange	TLP721FD4GRTP4M		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TLP721F(D4-GR,M,F) INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	TLP721F(D4-GR,M,F)		6,232			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TLP721F OFFICE MACHINE SWITCHING POWER SUPPLY.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	TLP721F		66,700			1 - 10 - 100 $0.566 1000 $0.377 10000 $0.377	Buy Now

LP721 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LP721		Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Original	PDF
LP721		Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR		Original	PDF

LP721 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
L271 Abstract: 01UF 100OHM 180PF 33PF L2711 LP721 Text: LP721 7.5V Chart 1 L2711 Pin vs Pout F=500 MHZ; Idq=.4;Vds=7.5V 13 8 7 12 POUT IN WATTS 6 5 Gain 11 4 3 Efficiency = 55% 10 2 1 9 0.1 0.2 0.3 0.4 0.5 PIN IN WATTS Page 1 0.6 0.7 0.8 0.9 GAIN IN DB Pout Vgs 7.5Vdc 8 7 R1 8.2KOHM C1 33PF RFin 1 2 .8-18pf L1 4.7NH	Original	PDF	LP721 L2711 8-18pf 100OHM 22awg L2711 180PF L271 01UF 100OHM 180PF 33PF
LP721 Abstract: No abstract text available Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LP721 LP721
Untitled Abstract: No abstract text available Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LP721
Untitled Abstract: No abstract text available Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LP721
171B Abstract: TB171B 20AWG LP721 Text: Polyfet RF Devices TB171B Vds=12.5Vdc Idq=0.6A Efficiency=60% at 15W Pout=15W LP721 Frequency=450-470 MHz TB-171B G ain/Efficiency vs Freq; VDS=12.5Vdc Idq=0.6A 20 70 18 60 50 Efficiency Gain 16 Pout fixed at 15W 40 14 30 12 20 10 10 8 450 452 454 456 458	Original	PDF	TB171B LP721 TB-171B 450MHz 850mu 20AWG 18AWG 190mils 171B TB171B LP721
LDMOS 15w Abstract: LP721 Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	PDF	LP721 LDMOS 15w LP721
LP721 Abstract: LDMOS Text: polyfet rf devices LP721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	PDF	LP721 LP721 LDMOS
10NF Abstract: 30PF 470PF 47PF 47UF LP721 TB-174 Text: 6 Volt VDD R F in C1 43P F C6 1NF G e n d io d e R1 10K 10K Pot 3 tu rn s 22AW G .0 7 8 " d ia 2 .7 V z e n e r R2 100 C9 .0 1 U F .0 7 8 " d ia 22AW G 4 tu rn s R 4 120 C10 47PF LP721 10 C20 10NF 22AW G 1 0 tu rn s 8 5 0 m u te rro id J.Citrolo 3 tu rn s	Original	PDF	LP721 120PF Lp721 600ma TB-174 138-153Mhz 470PF 10NF 30PF 470PF 47PF 47UF
MGCF21 Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount	Original	PDF	L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
rf push pull mosfet power amplifier Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941 Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30	Original	PDF	200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
mcp3021z Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler Text: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other	OCR Scan	PDF	LP666J LP721 TLP721F LP731 TLP732 PC918 PC702V PC714V mcp3021z P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler