LOW-NOISE AMPLIFIER 10GHZ Search Results

M203

Abstract: ITAR ha6006
Contextual Info: HBH 10.0 – 13.0 GHz Low Noise Amplifier PRELIMINARY Microwave GmbH HA6006 General Description The HA6006 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier

ha6007

Contextual Info: HBH 10.0 – 13.0 GHz Variable Gain Amplifier PRELIMINARY Microwave GmbH HA6007 General Description The HA6007 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier

telemetry block diagram

Abstract: HFA3600 HFA3600IB HFA3600IB96 IS-54 LINE FILTER FOR 900MHZ ha3600 HP346B
Contextual Info: HFA3600 TM Data Sheet May 1999 FN3655.4 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with minimal external components.

telemetry block diagram

Abstract: LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HFA3600 HFA3600IB HFA3600IB96 IS-54
Contextual Info: HFA3600 Data Sheet May 1999 File Number 3655.4 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with minimal external components.

Noise dc 12

Abstract: power supply 12v
Contextual Info: JXWBLA-T-7000-10000-30 7~10GHz Low Noise Amplifier Test report is for reference only. TEST REPORT For JXWBLA-T-7000-10000-30 Page 1 JXWBLA-T-7000-10000-30 7~10GHz Low Noise Amplifier Technical Specification 7-10 Frequency Range GHz Gain(dB) 30 min Pout@1dB(dBm)

NJG1148MD7

Contextual Info: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select

NJG1148MD7

Contextual Info: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select

OC106

Contextual Info: NJG1148MD7 5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC • GENERAL DESCRIPTION NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC designed for wireless LAN, wireless image transmission and Intelligent Transport System. The NJG1148MD7 has a LNA pass-through function to select

Contextual Info: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

CHA3666-99F

Abstract: CHA3666 CHA3666-99F/00
Contextual Info: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

CHA3666-99F

Abstract: CHA3666-99F/00 CHA3666 8108
Contextual Info: CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: CHA3656-QAG 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial

Contextual Info: CHA2063 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges

nf46

Abstract: CHA3666 CHA3666-SNF
Contextual Info: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage selfbiased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via

CHA3666

Abstract: CHA3666-SNF
Contextual Info: CHA3666-SNF 5.8-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC in hermetic package Description The CHA3666-SNF is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

CHA3666-QAG

Abstract: AN0017
Contextual Info: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

Contextual Info: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

CHA3666-QAG

Abstract: AN0017
Contextual Info: CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via

M1555

Abstract: 04CS10N GRM1555C1H1R8CZ01D ATF-551M4 GRM1885C1H103K 04CS2N0 ATF551M4 connector ubs 0402CS-10NXJBW 0402CS-2N0XJBW
Contextual Info: A 3.5GHz WiMAX Low Noise Amplifier for CPE and BTS Application Using ATF-551M4 Application Note 5328 Introduction Avago Technologies’ ATF-551M4 is a low noise enhancement mode PHEMT designed for use in low cost commercial application in the VHF through 10GHz frequency

MCH4014

Abstract: ENA1921 8948 a19211
Contextual Info: MCH4014 Ordering number : ENA1921 SANYO Semiconductors DATA SHEET MCH4014 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)

TL 0621

Contextual Info: MCH4016 Ordering number : ENA1922 SANYO Semiconductors DATA SHEET MCH4016 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)

CPH6021

Abstract: FT10G V 7470
Contextual Info: CPH6021 Ordering number : ENA1910 SANYO Semiconductors DATA SHEET CPH6021 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)

Contextual Info: CPH6021 Ordering number : ENA1910A SANYO Semiconductors DATA SHEET CPH6021 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)

Contextual Info: MCH4015 Ordering number : ENA1911 SANYO Semiconductors DATA SHEET MCH4015 NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V)