LOW RANGE PHOTO TRANSISTOR Search Results

CR50TEA

Abstract: CR50TEB CR50TEF photodiode and phototransistor CST10 CR50PD
Contextual Info: PHOTO-DIODES, TRANSISTORS & DARLINGTON STANDARD, SIDE BEAM AND LARGE AREA • A DIVERSE RANGE OF PHOTO-DIODES, PHOTO-TRANSISTORS AND PHOTO DARLINGTONS • USEFUL FOR MANY OPTICAL SENSE AND DETECTION APPLICATIONS, VARIOUS ACTIVE AREA SIZES • PHOTO-DARLINGTON OFFERS SUPER HIGH SENSITIVITY FOR LOW LIGHT CONDITION

Contextual Info: DATA SHEET OLH2047/OLH2048/OLH2049: Photo-Transistor Hermetic Optocouplers Features • Current Transfer Ratio CTR guaranteed over –55 °C to +100 °C ambient temperature range • 2500 V electrical isolation • Standard 8-pin DIP configuration • High CTR at low input current

Wheatstone Bridge operational amplifier

Abstract: n-channel jfet amplitude control AD620 VOLTAGE TO CURRENT CONVERTER dual jfet transistor array AMPLI DUAL CV 60 Wheatstone Bridge amplifier half bridge inverter schematic operation of ad620 instrumentation amplifier AMPLI DUAL CV 120 datasheet and application AD620
Contextual Info: a FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 µA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V/µs No Phase Reversal APPLICATIONS Photo Diode Preamplifier

SY7066

Abstract: d824a
Contextual Info: ANALOG ► DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 ^iA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V/^s No Phase Reversal APPLICATIONS Photo Diode Preamplifier

Contextual Info: ANALOG DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 |aA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V / jas No Phase Reversal APPLICATIONS Photo Diode Preamplifier

TRANSISTOR C 6090 lg

Abstract: TRANSISTOR C 6090 TC1101 8484 au
Contextual Info: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz

TC2181

Abstract: TC1101 0736 27319
Contextual Info: TRANSCOM TC2181 January 2002 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES • 0.5 dB Typical Noise Figure at 12 GHz PHOTO ENLARGEMENT • High Associated Gain: Ga = 12 dB Typical at 12 GHz • 18 dBm Typical Power at 12 GHz • 13 dB Typical Linear Power Gain at 12 GHz

LS7217

Abstract: LDR 03 PHOTO RESISTOR photo resistor LDR 3 Q12N3904 nsl-19m51
Contextual Info: LSI/CSI LS7217 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 PHOTO CONTROLLED OUTDOOR LIGHTING WITH PROGRAMMABLE TIMER FEATURES: • Input interface to a LDR or a photo transistor

Q12N3904

Contextual Info: LSI/CSI LS7217 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 PHOTO CONTROLLED OUTDOOR LIGHTING WITH PROGRAMMABLE TIMER FEATURES: • Input interface to a LDR or a photo transistor

Q12N3904

Contextual Info: LSI/CSI LS7217 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 PHOTO CONTROLLED OUTDOOR LIGHTING WITH PROGRAMMABLE TIMER FEATURES: • Input interface to a LDR or a photo transistor

Contextual Info: 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER 6N135 6N136 EL450x Series Schematic 6N135 / 6N136 Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C

Contextual Info: N E C t,4S7SHS 002^ 57^ 4 BQE D ELECTRONICS INC T - M r l'ip i r PHOTO TRANSISTOR PH102 NPN EPITAXIAL PHOTOTRANSISTOR PHOTO DETECTOR DESCRIPTION The PH102 is a miniature NPN sillicon pnototransistor having exceptionally stable characteristics mounted in a

OC401

Contextual Info: O K I electronic components OC401 PHOTO COUPLER GENERAL DESCRIPTION The C C40 is a combination of a GaAs infrared light emission diode and a photo transistor. It is mounted in a 6-pin plastic package and ensures dielectric voltage of 2,500 V. FEATURES • High-speed response : 140 ns

Contextual Info: MARKTECH INTERNATIONAL 571^55 1ÔE D DGGQ527 1 PHOTO IC COUPLER T -4 1 - S 3 MT6500, MT6510 Unit in mm inches APPLICATIONS • • • • • DIGITAL LOGIC ISOLATION LINE RECEIVER FEEDBACK CONTROL POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTOR

Contextual Info: INFRARED LED + PHOTO TRANSISTOR • * . l- \ M \ - TLP1230 C4 /(C5) (T L P 1 2 3 0 (C 4 ) COPIER, LASER BEAM PRINTER, LED PRINTER U nit in mm TLP1230 (C4) FACSIMILE, PRINTER, ELECTRONIC TYPEWRITER 4 - R ( 0.5 ) AUTOMATIC VENDING MACHINE, TERMINAL

MT25300

Abstract: MT25310 OGDQ544 V0IF MT253
Contextual Info: MARKTECH INTERNATIONAL STTIbSS QOQOSBi 5 IflE D PHOTO IC COUPLER MT25300, MT25310 T 4 I - & 3 Unit In mm Inches APPLICATIONS • DIGITAL LOGIC ISOLATION • LINE RECEIVER • POWER SUPPLY CONTROL • SWITCHING POWER SUPPLY • TRANSISTOR INVERTER The MARKTECH MT25300 and MT25310 dual

Contextual Info: O K I electronic components OC40 PHOTO COUPLER GENERAL DESCRIPTION The 0 0 4 0 is a photo coupler, which combines a GaAs infrared light emission diode and a photo transistor. It is mounted in a 6-pin plastic package. With a response as fast as 100ns. FEATURES

PH101

Contextual Info: SEC PHOTO TRANSISTOR ELECTRON DEVICE PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti­

PS401

Abstract: C426 QQE33 0D04t
Contextual Info: A C IN T E R F A C E IN C ID E D | 0023303 . SlAHLEY □ O D G M b 'l - fl | PS401 STANLEY PHOTO TRANSISTOR Dimensions • FEATURES 1 Wide range o f spectral wavelength covering visible light (red) to infrared light (2) High directivity

Contextual Info: ¡i, PHOTO TRANSISTOR w- HÿJTÏEÎJi W .W E PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -• -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti­

AC ammeter diagram

Abstract: TRANSIMPEDANCE mmic photo amplifier application circuit transimpedance amplifier 10 GHz cd photo diode shunt resistor tia amplifier ghz TRANSIMpedance Amplifier SFT-0100 STM-64
Contextual Info: Preliminary Data Sheet Product Description Sirenza Microdevices’ SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10/12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device

Sirenza AN-21

Contextual Info: Preliminary Data Sheet Product Description Sirenza Microdevices’ SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10/12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device

Contextual Info: AMOS TECHNOLOGY LIMITED R4a MM216 LIGHT-SENSE ASIC by external photo transistor DATA SHEET FEATURES • • • • • • • • Wide battery operating voltage range : 3.3V to 5.1V. Typical operating current : 150uA, VDD = 4.5V. Trigger pulse with controlled width on valid detection

Gan photo diode

Abstract: SFT-0100 at-1012 transistor PRBS31 STM-64 bjt differential amplifier
Contextual Info: SFT-0100 SFT-0100Transimpedance Amplifier TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10 Gb/s and 12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device technology that